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    PLASMA MONITORING AND MINIMIZING STRAY CAPACITANCE
    1.
    发明申请
    PLASMA MONITORING AND MINIMIZING STRAY CAPACITANCE 审中-公开
    等离子体监测和最小化流动电容

    公开(公告)号：US20130071581A1

    公开(公告)日：2013-03-21

    申请号：US13622955

    申请日：2012-09-19

    申请人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park ,  John M. White ,  Shinichi Kunita ,  Hsiao-Lin Yang

    发明人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park ,  John M. White ,  Shinichi Kunita ,  Hsiao-Lin Yang

    IPC分类号： H05H1/46

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32935

    摘要： The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.

    摘要翻译： 本发明一般涉及电容耦合等离子体（CCP）处理室，减少或防止杂散电容的方式，以及测量处理室内等离子体状态的方式。 随着CCP处理室的尺寸增加，杂散电容的趋势将对工艺产生负面影响。 另外，射频接地带可能会断开。 通过增加腔室背板和室壁之间的间隔，杂散电容可以最小化。 此外，可以通过测量背板上的等离子体的条件而不是在匹配网络来监测等离子体。 在这样的测量中，可以分析等离子体谐波数据以显示室内的等离子体处理条件。

    BALANCING RF BRIDGE ASSEMBLY
    2.
    发明申请
    BALANCING RF BRIDGE ASSEMBLY 有权
    平衡射频桥组件

    公开(公告)号：US20110185972A1

    公开(公告)日：2011-08-04

    申请号：US13014113

    申请日：2011-01-26

    申请人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park

    发明人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park

    IPC分类号： C23C16/505 ,  C23C16/455

    CPC分类号： C23C16/505

    摘要： Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

    摘要翻译： 本文公开的实施例一般涉及PECVD装置。 当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。 为了确保电流和电压在多个位置处基本上相同，RF桥组件可以在连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。 因此，在多个位置处对电极施加基本相同的电流和电压。

    Balancing RF bridge assembly
    3.
    发明授权
    Balancing RF bridge assembly 有权
    平衡射频桥组件

    公开(公告)号：US08875657B2

    公开(公告)日：2014-11-04

    申请号：US13014113

    申请日：2011-01-26

    申请人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park

    发明人： Jonghoon Baek ,  Sam H. Kim ,  Beom Soo Park

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/505

    CPC分类号： C23C16/505

    摘要： Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

    摘要翻译： 本文公开的实施例一般涉及PECVD装置。 当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。 为了确保电流和电压在多个位置处基本上相同，RF桥组件可以在连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。 因此，在多个位置处对电极施加基本相同的电流和电压。

    Substrate Support with Gas Introduction Openings
    5.
    发明申请
    Substrate Support with Gas Introduction Openings 有权
    基板支持与气体介绍开放

    公开(公告)号：US20120149194A1

    公开(公告)日：2012-06-14

    申请号：US13401755

    申请日：2012-02-21

    申请人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： SAM H. KIM ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/28

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    Substrate support with gas introduction openings
    6.
    发明授权
    Substrate support with gas introduction openings 有权
    衬底支撑与气体导入孔

    公开(公告)号：US08853098B2

    公开(公告)日：2014-10-07

    申请号：US13401755

    申请日：2012-02-21

    申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/687 ,  H01L21/683

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS
    7.
    发明申请
    SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
    基础支持与气体介绍开幕

    公开(公告)号：US20100184290A1

    公开(公告)日：2010-07-22

    申请号：US12686483

    申请日：2010-01-13

    申请人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    发明人： Sam H. Kim ,  John M. White ,  Soo Young Choi ,  Carl A. Sorensen ,  Robin L. Tiner ,  Beom Soo Park

    IPC分类号： H01L21/28

    CPC分类号： H01L21/68742 ,  H01L21/6831

    摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

    摘要翻译： 本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。 当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。 气袋可导致基板上的不均匀沉积。 因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。 在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。 通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

    Off-Center Ground Return for RF-Powered Showerhead
    8.
    发明申请
    Off-Center Ground Return for RF-Powered Showerhead 有权
    射频电源淋浴头的离心地面返回

    公开(公告)号：US20110126405A1

    公开(公告)日：2011-06-02

    申请号：US12892892

    申请日：2010-09-28

    申请人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

    发明人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

    IPC分类号： H01R43/00 ,  H01L21/02

    CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32577 ,  Y10T29/49117

    摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

    摘要翻译： RF阻抗匹配网络（33）的电接地（36）连接到等离子体室的接地室盖（18）上的连接区域（50）。 连接区域离开室盖的中心偏离工件通道（20）。 或者，RF电源（30）具有电接地输出（32），其连接到具有偏移的腔室盖上的连接区域（52）。 或者，RF传输线（37）具有电接地导体（39），其连接在RF电源的接地输出端和具有偏移的腔室盖上的连接区域（52）之间。

    Off-center ground return for RF-powered showerhead
    9.
    发明授权
    Off-center ground return for RF-powered showerhead 有权
    射频电源淋浴头的偏心接地返回

    公开(公告)号：US09039864B2

    公开(公告)日：2015-05-26

    申请号：US12892892

    申请日：2010-09-28

    申请人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

    发明人： Jonghoon Baek ,  Beom Soo Park ,  Sam Hyungsam Kim

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32577 ,  Y10T29/49117

    摘要： An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

    摘要翻译： RF阻抗匹配网络（33）的电接地（36）连接到等离子体室的接地室盖（18）上的连接区域（50）。 连接区域离开室盖的中心偏离工件通道（20）。 或者，RF电源（30）具有电接地输出（32），其连接到具有偏移的腔室盖上的连接区域（52）。 或者，RF传输线（37）具有电接地导体（39），其连接在RF电源的接地输出端和具有偏移的腔室盖上的连接区域（52）之间。