公开(公告)号：US20180059948A1

公开(公告)日：2018-03-01

申请号：US15690328

申请日：2017-08-30

申请人： Jongwon Lee ,  Dongeun Shin

发明人： Jongwon Lee ,  Dongeun Shin

IPC分类号： G06F3/06 ,  G06F12/02

CPC分类号： G06F3/064 ,  G06F3/0604 ,  G06F3/0673 ,  G06F12/0238 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/202 ,  G06F2212/7201 ,  G06F2212/7205

摘要： A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.

公开(公告)号：US10114575B2

公开(公告)日：2018-10-30

申请号：US15690328

申请日：2017-08-30

申请人： Jongwon Lee ,  Dongeun Shin

发明人： Jongwon Lee ,  Dongeun Shin

IPC分类号： G06F3/06 ,  G06F12/02

摘要： A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes a plurality of memory blocks, each of which includes string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines. The controller reads valid data groups of a first memory block and writes the read valid data groups in a second memory block, during a read reclaim operation. The controller assigns locations of the second memory block, at which the valid data groups are written, based on read counts of the valid data groups.