利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

36 条记录 (耗时 0.042 秒)

    Wafer processing apparatus having independently controllable energy sources
    2.
    发明授权
    Wafer processing apparatus having independently controllable energy sources 失效
    具有独立可控能量源的晶片处理装置

    公开(公告)号：US5138973A

    公开(公告)日：1992-08-18

    申请号：US282917

    申请日：1988-12-05

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation
    3.
    发明授权
    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
    使用远程产生的等离子体和原位等离子体与UV照射的处理方法

    公开(公告)号：US5248636A

    公开(公告)日：1993-09-28

    申请号：US892460

    申请日：1992-06-02

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

    Low particulate reliability enhanced remote microwave plasma discharge device
    4.
    发明授权
    Low particulate reliability enhanced remote microwave plasma discharge device 失效
    低微粒可靠性增强了远程微波等离子体放电装置

    公开(公告)号：US5262610A

    公开(公告)日：1993-11-16

    申请号：US677048

    申请日：1991-03-29

    申请人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

    发明人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

    IPC分类号： H01J37/32 ,  B23K9/00

    CPC分类号： H01J37/32256 ,  H01J37/32357

    摘要： A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.

    摘要翻译： 远程微波等离子体发生器包括两部分的组合，可调谐微波施加器和双壁水冷石英/蓝宝石管。 可调谐波导管施加器是一个不导电的可调节波导管，其中插入有石英/蓝宝石管。 可调节端距离管的中心线的四分之一的引导波长，另一侧距离较小0.1英寸，因此允许施加器与三根短线调谐器一起使用以实现最佳耦合。

    Method for etch of polysilicon film
    5.
    发明授权
    Method for etch of polysilicon film 失效
    多晶硅膜蚀刻方法

    公开(公告)号：US4867841A

    公开(公告)日：1989-09-19

    申请号：US203585

    申请日：1988-05-27

    申请人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

    发明人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

    IPC分类号： H01L21/3213

    CPC分类号： H01L21/32137

    摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.

    摘要翻译： 用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度 温度。

    Process for etch of tungsten
    6.
    发明授权
    Process for etch of tungsten 失效
    钨蚀刻工艺

    公开(公告)号：US4842676A

    公开(公告)日：1989-06-27

    申请号：US122605

    申请日：1987-11-17

    申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

    发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

    IPC分类号： C23F4/00 ,  H01L21/3213

    CPC分类号： H01L21/32136 ,  C23F4/00

    摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.

    摘要翻译： 用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻 和光致抗蚀剂和各向异性。

    Method for etching aluminum film doped with copper
    10.
    发明授权
    Method for etching aluminum film doped with copper 失效
    用于蚀刻掺杂有铜的铝膜的方法

    公开(公告)号：US4855016A

    公开(公告)日：1989-08-08

    申请号：US201300

    申请日：1988-05-27

    申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

    发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

    IPC分类号： C23F4/00 ,  H01L21/3213

    CPC分类号： H01L21/32136 ,  C23F4/00

    摘要： A process for etch of Copper doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of BCl.sub.3, Cl.sub.2, and a source of hydrocarbons with the process chamber within the process module being generally at ambient temperatures.

    摘要翻译： 在低压工艺模块中利用远程和原位等离子体组合的铜掺杂铝膜的蚀刻工艺，等离子体是由BCl3，Cl2和烃源与混合过程中的工艺室产生的 模块通常在环境温度下。