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    Method for passivating wafer
    4.
    发明授权
    Method for passivating wafer 失效
    钝化晶圆的方法

    公开(公告)号：US4855160A

    公开(公告)日：1989-08-08

    申请号：US203563

    申请日：1988-05-26

    申请人： Joseph D. Luttmer ,  Cecil J. Davis ,  Patricia B. Smith ,  Rudy L. York

    发明人： Joseph D. Luttmer ,  Cecil J. Davis ,  Patricia B. Smith ,  Rudy L. York

    IPC分类号： H01L21/471 ,  H01L21/473 ,  H01L21/677

    CPC分类号： H01L21/6779 ,  H01L21/471 ,  H01L21/473

    摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.

    摘要翻译： 一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。 压力容器可以非常小，即具有总加压体积，其几乎所有内部​​点可以装载到腔室中的工件或晶片中的一个或两厘米。 HgCdTe通过利用氧气和水蒸气进行氧化而被钝化，或硫化来源被硫化。 晶片和气体由位于处理室垂直壁上的加热器加热。

    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation
    6.
    发明授权
    Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
    使用远程产生的等离子体和原位等离子体与UV照射的处理方法

    公开(公告)号：US5248636A

    公开(公告)日：1993-09-28

    申请号：US892460

    申请日：1992-06-02

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

    Wafer processing apparatus having independently controllable energy sources
    7.
    发明授权
    Wafer processing apparatus having independently controllable energy sources 失效
    具有独立可控能量源的晶片处理装置

    公开(公告)号：US5138973A

    公开(公告)日：1992-08-18

    申请号：US282917

    申请日：1988-12-05

    申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

    IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

    CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

    摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

    摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

    Method for deposition of silicon oxide on a wafer
    9.
    发明授权
    Method for deposition of silicon oxide on a wafer 失效
    在晶圆上沉积氧化硅的方法

    公开(公告)号：US4988533A

    公开(公告)日：1991-01-29

    申请号：US203583

    申请日：1988-05-27

    申请人： Dean W. Freeman ,  Joseph D. Luttmer ,  Patricia B. Smith ,  Cecil J. Davis

    发明人： Dean W. Freeman ,  Joseph D. Luttmer ,  Patricia B. Smith ,  Cecil J. Davis

    IPC分类号： C23C16/40

    CPC分类号： C23C16/402

    摘要： A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.

    摘要翻译： 使用单个处理室在温度敏感晶片上沉积氧化硅层的处理装置和方法向室提供氧化亚氮气体，其中激发能由远程产生的等离子体提供，同时将硅烷气体与照射晶片同时 原位产生的紫外线能量以产生氧化硅层。

    Rapid cycle chuck for low-pressure processing
    10.
    发明授权
    Rapid cycle chuck for low-pressure processing 失效
    快速循环卡盘用于低压处理

    公开(公告)号：US06705394B1

    公开(公告)日：2004-03-16

    申请号：US09664011

    申请日：2000-09-19

    申请人： Mehrdad M. Moslehi ,  Xiangqun Chen ,  Shiyuan Cheng ,  Cecil J. Davis

    发明人： Mehrdad M. Moslehi ,  Xiangqun Chen ,  Shiyuan Cheng ,  Cecil J. Davis

    IPC分类号： C23C1602

    CPC分类号： H01L21/67248 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  H01L21/67109

    摘要： Rapid thermal cycling of substrates in low-pressure processing environments is achieved by movable temperature conditioners located outside the processing environments. The substrates are mounted on thermally conductive pedestals for processing in the low-pressure environment. The temperature conditioners are movable both into and out of thermal contact with the pedestals outside the low-pressure environment to regulate transfers of heat through the pedestals between the substrates and the temperature conditioners. A translatable cooler block with a high thermal mass and a large interface area with the pedestal can be used as a temperature conditioner for more rapidly withdrawing heat from the substrate.

    摘要翻译： 在低压处理环境中，基板的快速热循环是通过位于加工环境之外的可移动温度调节器实现的。 基板安装在导热底座上，用于在低压环境中进行加工。 温度调节器可以与低压环境之外的基座进行热接触，以便调节通过基板和温度调节器之间的基座的热传递。 可以使用具有高热质量和与基座的大的接口面积的可翻转的冷却器块作为用于更快速地从基板排出热量的温度调节器。