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    High performance memory interface circuit architecture
    1.
    发明授权
    High performance memory interface circuit architecture 有权
    高性能存储器接口电路架构

    公开(公告)号：US08593195B1

    公开(公告)日：2013-11-26

    申请号：US13614526

    申请日：2012-09-13

    申请人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    发明人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    IPC分类号： H03H11/16

    CPC分类号： H03L7/0812 ,  G11C7/22 ,  G11C7/222 ,  H03L7/0805

    摘要： A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.

    摘要翻译： 可编程存储器接口电路包括可编程DLL延迟链，相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元，可编程开关，相位检测器和数字计数器来产生粗略的相移控制设置。 然后，粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置，其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置，以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号，其中心对准其相关联的DQ信号。

    High-performance memory interface circuit architecture
    2.
    发明授权
    High-performance memory interface circuit architecture 有权
    高性能存储器接口电路架构

    公开(公告)号：US07535275B1

    公开(公告)日：2009-05-19

    申请号：US11789598

    申请日：2007-04-24

    申请人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    发明人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    IPC分类号： H03L7/00

    CPC分类号： H03L7/0812 ,  G11C7/22 ,  G11C7/222 ,  H03L7/0805

    摘要： A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.

    摘要翻译： 可编程存储器接口电路包括可编程DLL延迟链，相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元，可编程开关，相位检测器和数字计数器来产生粗略的相移控制设置。 然后，粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置，其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置，以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号，其中心对准其相关联的DQ信号。

    High-performance memory interface circuit architecture
    3.
    发明授权
    High-performance memory interface circuit architecture 有权
    高性能存储器接口电路架构

    公开(公告)号：US08305121B1

    公开(公告)日：2012-11-06

    申请号：US13168499

    申请日：2011-06-24

    申请人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    发明人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    IPC分类号： H03L7/00

    CPC分类号： H03L7/0812 ,  G11C7/22 ,  G11C7/222 ,  H03L7/0805

    摘要： A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.

    摘要翻译： 可编程存储器接口电路包括可编程DLL延迟链，相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元，可编程开关，相位检测器和数字计数器来产生粗略的相移控制设置。 然后，粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置，其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置，以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号，其中心对准其相关联的DQ信号。

    High-performance memory interface circuit architecture
    4.
    发明授权
    High-performance memory interface circuit architecture 有权
    高性能存储器接口电路架构

    公开(公告)号：US07969215B1

    公开(公告)日：2011-06-28

    申请号：US12467681

    申请日：2009-05-18

    申请人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    发明人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    IPC分类号： H03L7/00

    CPC分类号： H03L7/0812 ,  G11C7/22 ,  G11C7/222 ,  H03L7/0805

    摘要： A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.

    摘要翻译： 可编程存储器接口电路包括可编程DLL延迟链，相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元，可编程开关，相位检测器和数字计数器来产生粗略的相移控制设置。 然后，粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置，其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置，以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号，其中心对准其相关联的DQ信号。

    High-performance memory interface circuit architecture
    5.
    发明授权
    High-performance memory interface circuit architecture 有权
    高性能存储器接口电路架构

    公开(公告)号：US07227395B1

    公开(公告)日：2007-06-05

    申请号：US11055125

    申请日：2005-02-09

    申请人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    发明人： Joseph Huang ,  Chiakang Sung ,  Philip Pan ,  Yan Chong ,  Andy L. Lee ,  Brian D. Johnson

    IPC分类号： H03L7/00

    CPC分类号： H03L7/0812 ,  G11C7/22 ,  G11C7/222 ,  H03L7/0805

    摘要： A programmable memory interface circuit includes a programmable DLL delay chain, a phase offset control circuit and a programmable DQS delay chain. The DLL delay chain uses a set of serially connected delay cells, a programmable switch, a phase detector and a digital counter to generate a coarse phase shift control setting. The coarse phase shift control setting is then used to pre-compute a static residual phase shift control setting or generate a dynamic residual phase shift control setting, one of which is chosen by the phase offset control circuit to be added to or subtracted from the coarse phase shift control setting to generate a fine phase shift control setting. The coarse and fine phase shift control settings work in concert to generate a phase-delayed DQS signal that is center-aligned to its associated DQ signals.

    摘要翻译： 可编程存储器接口电路包括可编程DLL延迟链，相位偏移控制电路和可编程DQS延迟链。 DLL延迟链使用一组串行连接的延迟单元，可编程开关，相位检测器和数字计数器来产生粗略的相移控制设置。 然后，粗略的相移控制设置用于预先计算静态残留相移控制设置或生成动态残留相移控制设置，其中一个由相位偏移控制电路选择以被加到或从粗略 相移控制设置，以产生精细的相移控制设置。 粗调和精细相移控制设置一致地产生相位延迟的DQS信号，其中心对准其相关联的DQ信号。

    Self-compensating delay chain for multiple-date-rate interfaces
    8.
    发明授权
    Self-compensating delay chain for multiple-date-rate interfaces 有权
    多速率接口的自补偿延迟链

    公开(公告)号：US07200769B1

    公开(公告)日：2007-04-03

    申请号：US10037861

    申请日：2002-01-02

    申请人： Yan Chong ,  Chiakang Sung ,  Bonnie I. Wang ,  Joseph Huang ,  Xiaobao Wang ,  Philip Pan ,  Tzung-Chin Chang

    发明人： Yan Chong ,  Chiakang Sung ,  Bonnie I. Wang ,  Joseph Huang ,  Xiaobao Wang ,  Philip Pan ,  Tzung-Chin Chang

    IPC分类号： G06F1/04

    CPC分类号： G11C7/22 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/222 ,  G11C2207/108 ,  H03L7/0805 ,  H03L7/0814 ,  H03L7/091

    摘要： Methods and apparatus for delaying a clock signal for a multiple-data-rate interface. An apparatus provides an integrated circuit including a frequency divider configured to receive a first clock signal and a first variable-delay block configured to receive an output from the frequency divider. Also included is a phase detector configured to receive the first clock signal and an output from the first variable-delay block, and an up/down counter configured to receive an output from the phase detector. A second variable-delay block is configured to receive a second clock signal and a plurality of flip-flops are configured to receive an output from the second variable-delay block. The first variable-delay block and the second variable-delay block are configured to receive an output from the up/down counter.

    摘要翻译： 用于延迟多数据速率接口的时钟信号的方法和装置。 一种装置提供一种集成电路，其包括配置成接收第一时钟信号的分频器和被配置为接收来自分频器的输出的第一可变延迟块。 还包括相位检测器，被配置为接收第一时钟信号和来自第一可变延迟块的输出，以及配置为接收来自相位检测器的输出的上/下计数器。 第二可变延迟块被配置为接收第二时钟信号，并且多个触发器被配置为从第二可变延迟块接收输出。 第一可变延迟块和第二可变延迟块被配置为从加/减计数器接收输出。

    Techniques for implementing address recycling in memory circuits
    9.
    发明授权
    Techniques for implementing address recycling in memory circuits 失效
    在存储器电路中实现地址回收的技术

    公开(公告)号：US06961280B1

    公开(公告)日：2005-11-01

    申请号：US10731279

    申请日：2003-12-08

    申请人： Philip Pan ,  Chiakang Sung ,  Joseph Huang ,  Yan Chong ,  Johnson Tan

    发明人： Philip Pan ,  Chiakang Sung ,  Joseph Huang ,  Yan Chong ,  Johnson Tan

    IPC分类号： G06F12/08 ,  G11C8/00 ,  G11C8/06 ,  G11C8/10

    CPC分类号： G11C8/06 ,  G06F12/0895 ,  G11C8/10

    摘要： Techniques are provided for recycling addresses in memory blocks. Address signals in memory blocks are stored temporarily in a set of parallel coupled address registers. The address registers transfer the address signals to an address decoder block, which decodes the address signals. The address decoder block transfers the decoded addresses to a memory array. A stall state occurs when the cache memory block needs a new set of data to replace the old set of data. Address signals are stored in the address registers during the stall state by coupling each register's output to its data input using a series of multiplexers. The multiplexers are controlled by an address stall signal that indicates the onset and the end of a stall state. After the end of a stall state, the address registers store the next address signal received at the memory block.

    摘要翻译： 提供技术来回收内存块中的地址。 存储器块中的地址信号被临时存储在一组并行耦合的地址寄存器中。 地址寄存器将地址信号传送到地址解码块，对地址信号进行解码。 地址解码器块将解码的地址传送到存储器阵列。 当缓存存储块需要一组新的数据来替换旧的数据集时，会发生停顿状态。 通过使用一系列多路复用器将每个寄存器的输出耦合到其数据输入，地址信号在失速状态下存储在地址寄存器中。 多路复用器由指示失速状态的开始和结束的地址停止信号控制。 在停止状态结束后，地址寄存器存储在存储块处接收的下一个地址信号。

    On/off reference voltage switch for multiple I/O standards
    10.
    发明授权
    On/off reference voltage switch for multiple I/O standards 有权
    用于多个I / O标准的开/关参考电压开关

    公开(公告)号：US06911860B1

    公开(公告)日：2005-06-28

    申请号：US10037716

    申请日：2001-11-09

    申请人： Xiaobao Wang ,  Chiakang Sung ,  Khai Nguyen ,  Joseph Huang ,  Bonnie Wang ,  Philip Pan ,  Yan Chong ,  In Whan Kim ,  Gopinath Rangan ,  Tzung-Chin Chang

    发明人： Xiaobao Wang ,  Chiakang Sung ,  Khai Nguyen ,  Joseph Huang ,  Bonnie Wang ,  Philip Pan ,  Yan Chong ,  In Whan Kim ,  Gopinath Rangan ,  Tzung-Chin Chang

    IPC分类号： H03K17/35

    CPC分类号： H03K17/6871 ,  H03K3/356113 ,  H03K17/063

    摘要： A switch circuit selectively provides a reference voltage, needed in some I/O standards, to a logic device. The circuit receives a dedicated power supply that is different from the device's I/O supply. It may also include a level shifting circuit for converting a master control signal having a logic level determined by a first supply to a first control signal having a logic level determined by the dedicated supply. The switch circuit also includes a transmission switch that passes the reference voltage to an output in response to at least the first control signal. The transmission switch may be a CMOS transmission gate with at least one NMOS transistor controlled by the first control signal in parallel with at least one PMOS transistor controlled by a second control signal, complementary to the first. The second control signal may be generated by another level shifting circuit and have a logic level determined by the I/O supply.

    摘要翻译： 开关电路选择性地将某些I / O标准所需的参考电压提供给逻辑器件。 该电路接收与设备的I / O电源不同的专用电源。 其还可以包括电平移位电路，用于将具有由第一电源确定的逻辑电平的主控制信号转换成具有由专用电源确定的逻辑电平的第一控制信号。 开关电路还包括传输开关，其响应于至少第一控制信号将参考电压传递到输出。 传输开关可以是CMOS传输门，其中至少一个NMOS晶体管由第一控制信号控制，与由与第一控制信号互补的第二控制信号控制的至少一个PMOS晶体管并联。 第二控制信号可以由另一电平移位电路产生并具有由I / O电源确定的逻辑电平。