Abstract:
A system and method are provided for testing an integrated circuit (IC) using thermally induced noise analysis. The method provides an IC die and supplies electrical power to the IC die. The IC die surface is scanned with a laser, and the laser beam irradiated locations on the IC die surface are tracked. The laser scanning heats active electrical elements underlying the scanned IC die surface. A frequency response of an IC die electrical interface is measured and correlated to irradiated locations. IC die defect regions are determined in response to identifying location-correlated frequency measurements exceeding a noise threshold. For example, a frequency measurement may be correlated to a die surface location, and if frequency measurement exceeds the noise threshold, then circuitry underlying that surface area may be identified as defective. Typically, die defect regions are associated with measurements in the frequency range between about 1 Hertz and 10 kilohertz.
Abstract:
A method is provided for detecting laser optical paths in integrated circuit (IC) packages. The method provides an IC die encapsulated as a package in a compound of glass spheres and epoxy. Power is supplied to the IC. The IC is scanned with a laser. Typically, a laser wavelength is used that is minimally absorbed by the glass spheres in the epoxy compound of the IC package, and changes in current to the IC are detected. A detected current change is cross-referenced against a scanned IC package surface region. This process identifies an optical pathway underlying the scanned IC package surface region. In some aspects, this process leads to the identification of a glass sphere-collecting package structure underlying the optical pathway. Examples of a glass sphere-collecting structure might include an inner lead wire, lead frame edge, or die edge.
Abstract:
A reflector tool and a method are provided for three-dimensional integrated circuit (IC) failure analysis. An IC (die) has top and bottom surfaces, a perimeter, and a first side. The IC is electrically connected to a current sensing amplifier. The first side of the IC is scanned in the X plane with an infrared laser beam while changes in IC current flow are sensed. The sensed current changes are cross-referenced to the location of the infrared laser beam in the X plane. In one aspect, a plurality of scans are performed on the first side in the X plane, with at a corresponding plurality of steps in the Y plane, so that current changes can be cross-referenced to locations in the X and Y planes. Using this 2-D analysis through the IC side, a human operator or software program can determine defects in the IC.
Abstract:
A reflector tool and a method are provided for three-dimensional integrated circuit (IC) failure analysis. An IC (die) has top and bottom surfaces, a perimeter, and a first side. The IC is electrically connected to a current sensing amplifier. The first side of the IC is scanned in the X plane with an infrared laser beam while changes in IC current flow are sensed. The sensed current changes are cross-referenced to the location of the infrared laser beam in the X plane. In one aspect, a plurality of scans are performed on the first side in the X plane, with at a corresponding plurality of steps in the Y plane, so that current changes can be cross-referenced to locations in the X and Y planes. Using this 2-D analysis through the IC side, a human operator or software program can determine defects in the IC.
Abstract:
A socketless integrated circuit (IC) contact connector is provided with an electrically conductive support post. An electrically conductive spring has a first end connected to the post, and a second end. An electrically conductive first wire has a first end connected to the spring second end, and a second end. An electrically conductive loop with a loop neck is connected to the first wire second end. Typically, the loop is formed in the first wire second end. The spring and loop work in cooperation to engage an IC contact.
Abstract:
A method is provided for thermal electric binary logic control. The method accepts an input voltage representing an input logic state. A heat reference is controlled in response to the input voltage. The method supplies an output voltage representing an output logic state, responsive to the heat reference. More explicitly, the heat reference controls the output voltage of a temperature-sensitive voltage divider. For example, the temperature-sensitive voltage divider may be a thermistor voltage divider.
Abstract:
System and methods are provided for optical-magnetic Kerr effect signal analysis. In one aspect, a test fixture is supplied having parallel conductive lines, with an input of a first line adjacent a resistively loaded output of a second line and a resistively loaded output of the first line adjacent an input of the second line. An optically transparent test region is interposed between the conductive lines, and a metallic reflector underlies the test region. A signal reference is supplied to the input of the first line and a signal under test is supplied to the input of the second line. A light beam having a first angle of polarization is focused through the test region onto the reflector. The intensity of the reflected light is measured and the similarity between the signal under test and the reference signal can be determined in response to the measured light intensity.
Abstract:
A method is provided for thermal electric binary logic control. The method accepts an input voltage representing an input logic state. A heat reference is controlled in response to the input voltage. The method supplies an output voltage representing an output logic state, responsive to the heat reference. More explicitly, the heat reference controls the output voltage of a temperature-sensitive voltage divider. For example, the temperature-sensitive voltage divider may be a thermistor voltage divider.
Abstract:
A thermal electric (TE) binary NAND gate logic circuit is provided with a method for NAND logic gating. The method accepts a first input voltage representing an input binary logic state and generates a first thermal electric (TE) temperature in response to the first input voltage. A second input voltage is accepted representing an input binary logic state, and a second TE temperature is generated in response to the second input voltage. In response to the first and second TE temperatures, a NAND logic state output voltage is generated. More explicitly, a first control voltage is generated in response to the first TE temperature, and a second control voltage is generated in response to the second TE temperature. Then, a third TE temperature is generated in response to the first and second control voltages, which in turn generates the output voltage.
Abstract:
A method is provided for laser patterning an integrated circuit (IC) etching mask. The method provides an IC packaged die with a first region underlying a backside surface of a bulk silicon (Si) layer. An etch-resistant film is formed overlying the backside surface. Alternately, the entire IC die package is conformally coated. A semi-transparent film is formed overlying the etch-resistant film, semi-transparent to light having a first wavelength. In response to irradiating the semi-transparent film with light having a first power density, an IC die first region is located. In response to irradiating the semi-transparent film with a laser light having a second power density, greater than the first power density, an area of etch-resistant film overlying the first region is decomposed. More explicitly, an area of semi-transparent film overlying the first region is ablated, and the etch-resistant film underlying the ablated semi-transparent film is heated.