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公开(公告)号：US20120269967A1
公开(公告)日：2012-10-25
申请号：US13437567
申请日：2012-04-02
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/45544
摘要： Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.
摘要翻译： 提供了用于原子层沉积设备的气体分配板，其包括热线或热丝单元，其可以在加工基板的同时被加热以激发气态物质。 还描述了使用热丝处理衬底以激发气态前体物质的方法。
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公开(公告)号：US20140023794A1
公开(公告)日：2014-01-23
申请号：US13948492
申请日：2013-07-23
申请人： Maitreyee Mahajani , Steven D. Marcus , Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Ning Li , Jingjing Liu , Sukti Chatterjee , Timothy W. Weidman
发明人： Maitreyee Mahajani , Steven D. Marcus , Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Ning Li , Jingjing Liu , Sukti Chatterjee , Timothy W. Weidman
CPC分类号： C23C16/325 , C23C16/345 , C23C16/36 , C23C16/45534 , C23C16/4554
摘要： Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.
摘要翻译： 提供了用于致密化薄膜的低温原子层沉积的方法和装置。 通过暴露于一种或多种等离子体或自由基物质形成并致密化低温膜。 所得到的致密化膜对于不致密化而形成的低温膜具有优异的性能。
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公开(公告)号：US08465903B2
公开(公告)日：2013-06-18
申请号：US13267341
申请日：2011-10-06
申请人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
发明人： Timothy W. Weidman , Timothy Michaelson , Paul Deaton , Nitin K. Ingle , Abhijit Basu Mallick , Amit Chatterjee
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译： 提供了在基板上形成对辐射敏感的光刻胶的方法。 描述了使用等离子体形成膜（例如，含硅膜）作为光致抗蚀剂的化学气相沉积方法，其可以暴露于辐射以形成图案。 沉积方法利用具有可暴露于辐射时交联的可交联部分的前体。 辐射可以在有或没有氧的情况下进行。 然后可以将曝光或未曝光的区域显影在碱性显影液中。
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公开(公告)号：US20130071580A1
公开(公告)日：2013-03-21
申请号：US13609551
申请日：2012-09-11
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译： 提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。 含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。 描述了使用卤化或氰化硅烷沉积SiN膜的方法。 可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。
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公开(公告)号：US20100255655A1
公开(公告)日：2010-10-07
申请号：US12817840
申请日：2010-06-17
IPC分类号： H01L21/762
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31608
摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer filling a portion of a trench on the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may further include depositing additional silicon oxide over the cured silicon oxide to fill the trench. The methods may also include removing the acidic vapor from the semiconductor processing chamber.
摘要翻译： 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底并形成填充衬底上的沟槽的一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还包括将酸性蒸汽引入半导体处理室，酸性蒸气与氧化硅层反应以从氧化硅层除去碳物质。 所述方法还可以包括在固化的氧化硅上沉积额外的氧化硅以填充沟槽。 所述方法还可以包括从半导体处理室去除酸性蒸汽。
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公开(公告)号：US20100051085A1
公开(公告)日：2010-03-04
申请号：US12549291
申请日：2009-08-27
申请人： Timothy W. Weidman , Charles Gay , Hsiu-Wu (Jason) Guo , Rohit Mishra , Kapila P. Wijekoon , Hemant Mungekar
发明人： Timothy W. Weidman , Charles Gay , Hsiu-Wu (Jason) Guo , Rohit Mishra , Kapila P. Wijekoon , Hemant Mungekar
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02245 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell.
摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 形成高效率太阳能电池的方法可以包括使用结合到金属化太阳能电池器件的预制背板来形成互连的太阳能电池模块。 最有可能受益于本发明的太阳能电池，包括那些具有活性区域的太阳能电池，所述活性区域包括在电池背面具有正触点和负极的单晶硅或多晶硅。
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7.发明申请公开(公告)号：US20090142880A1
公开(公告)日：2009-06-04
申请号：US12274023
申请日：2008-11-19
申请人： Timothy W. Weidman , Rohit Mishra
发明人： Timothy W. Weidman , Rohit Mishra
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.
摘要翻译： 本发明的实施例考虑使用新的方法形成高效太阳能电池来形成太阳能电池器件的有源区和金属接触结构。 在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，所述蚀刻和图案化工艺用于通过覆盖太阳能电池基板的表面的覆盖介电层限定点接触。 该方法通常包括沉积能够在可以形成与太阳能电池器件的电接触的电介质层中形成所需图案的蚀刻剂材料。
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公开(公告)号：US20090139568A1
公开(公告)日：2009-06-04
申请号：US12273975
申请日：2008-11-19
CPC分类号： H01L31/022425 , Y02E10/50
摘要： Embodiments of the invention contemplate formation of a low cost solar cell using novel methods and apparatus to form a metal contact structure. The method generally uses a conductive contact layer that enables formation of a good electrical contact to the solar cell device. In one case, the contact layer is a nickel containing layer. Various deposition techniques may be used to form the metal contact structure.
摘要翻译： 本发明的实施例考虑使用新颖的方法和装置形成金属接触结构来形成低成本太阳能电池。 该方法通常使用能够形成与太阳能电池器件良好的电接触的导电接触层。 在一种情况下，接触层是含镍层。 可以使用各种沉积技术来形成金属接触结构。
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公开(公告)号：US07542132B2
公开(公告)日：2009-06-02
申请号：US11830202
申请日：2007-07-30
CPC分类号： G01N21/65
摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.
摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。
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10.发明授权Measurement techniques for controlling aspects of a electroless deposition process 有权用于控制无电沉积工艺方面的测量技术公开(公告)号：US07465358B2
公开(公告)日：2008-12-16
申请号：US10794592
申请日：2004-03-05
IPC分类号： B05C11/00
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing chamber, sensors and a controller and method for using the same. The fluid processing chamber includes an inlet region, a processing region and an outlet region. The inlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid at the inlet to the processing region. The outlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid leaving the processing region of the chamber. In one embodiment the processing region contains one or more sensors and an external controller to monitor the characteristics of the processing fluid in the processing region. The sensors may include, for example, an ORP probe, a temperature sensor, a conductivity sensor, a dissolved hydrogen sensor, a dissolved oxygen sensor, and a pH sensor. The fluid processing chamber is generally useful for all process steps done to deposit an electroless deposited film on a substrate including, for example, all pre-clean process steps (substrate preparation steps), all electroless activation process steps, all electroless deposition steps, and all post electroless deposition cleaning steps.
摘要翻译： 本发明的实施例通常提供流体处理室，传感器以及使用该流体处理室的控制器和方法。 流体处理室包括入口区域，处理区域和出口区域。 入口区域通常包含一个或多个传感器和外部控制器，以监控处理区域入口处的处理流体的特性。 出口区域通常包含一个或多个传感器和外部控制器，以监测离开室的处理区域的处理流体的特性。 在一个实施例中，处理区域包含一个或多个传感器和外部控制器，用于监视处理区域中处理流体的特性。 传感器可以包括例如ORP探针，温度传感器，电导率传感器，溶解氢传感器，溶解氧传感器和pH传感器。 流体处理室通常可用于在基底上沉积无电沉积膜的所有工艺步骤，包括例如所有预清洁工艺步骤（衬底制备步骤），所有无电解激活工艺步骤，所有无电沉积步骤和 所有后期无电沉积清洗步骤。
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