Self aligning non contact shadow ring process kit
    2.
    发明授权
    Self aligning non contact shadow ring process kit 有权
    自对准非接触阴影环工艺套件

    公开(公告)号:US06589352B1

    公开(公告)日:2003-07-08

    申请号:US09459313

    申请日:1999-12-10

    IPC分类号: C23C1600

    摘要: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

    摘要翻译: 本发明提供了可拆卸的第一边缘环,其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中,第一边缘环包括多个销,并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽,并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。

    Tungsten chamber with stationary heater
    3.
    发明授权
    Tungsten chamber with stationary heater 有权
    带固定加热器的钨室

    公开(公告)号:US06503331B1

    公开(公告)日:2003-01-07

    申请号:US09660006

    申请日:2000-09-12

    IPC分类号: C23C1600

    CPC分类号: H01J37/3244 H01J2237/022

    摘要: Provided herewith is a chamber for depositing a film on a substrate comprising a process compartment; a purge compartment, a purge ring located on the chamber body to separate the two compartments, a heater, and a shadow ring covering the periphery of the substrate. Alternatively, the chamber may further comprise a shield interconnected with the shadow ring. Still provided is a method for depositing a film of uniformity on a substrate in such a chamber. The method comprises the steps of positioning the substrate in a process compartment; flowing a process gas into the process compartment; flowing a purge gas in a purge compartment; and exhausting the process and purge gas from the chamber, thereby depositing a film of uniformity on the substrate.

    摘要翻译: 提供了一种用于在包括处理隔室的基板上沉积膜的室; 净化室,位于室主体上以分离两个隔室的清洗环,加热器和覆盖基板周边的阴影环。 或者,腔室可以进一步包括与阴影环互连的护罩。 仍然提供了一种在这种室中的基板上沉积均匀膜的方法。 该方法包括以下步骤:将基板定位在处理室中; 将工艺气体流入加工室; 将吹扫气体流入净化室; 并排出该过程并从室中吹扫气体,从而在衬底上沉积均匀的膜。

    Fastening device for a purge ring
    4.
    发明授权
    Fastening device for a purge ring 有权
    用于清洗环的紧固装置

    公开(公告)号:US06223447B1

    公开(公告)日:2001-05-01

    申请号:US09504288

    申请日:2000-02-15

    IPC分类号: F26B1724

    CPC分类号: H01L21/68721 H01L21/68735

    摘要: A fastening device which prevents rotational and vertical displacement of a purge ring caused by purge gas exiting the purge ring or caused by other processing conditions. The fastening device comprises a clamp which releasably holds the purge ring together with the wafer support. A pin is inserted into a bore through the purge ring, wafer support and the clamp to releasably secure the clamp in place. Slots may be formed in the purge ring to guide placement of the clamp.

    摘要翻译: 一种紧固装置,其防止由吹扫气体离开吹扫环或由其它加工条件引起的清洗环的旋转和垂直位移。 紧固装置包括可拆卸地将清洗环与晶片支撑件一起保持的夹具。 销通过清洗环,晶片支架和夹具插入孔中,以将夹具可释放地固定到位。 槽可以形成在清洗环中以引导夹具的放置。

    Method and apparatus for preventing edge deposition
    5.
    发明授权
    Method and apparatus for preventing edge deposition 有权
    防止边缘沉积的方法和装置

    公开(公告)号:US06375748B1

    公开(公告)日:2002-04-23

    申请号:US09387928

    申请日:1999-09-01

    IPC分类号: C23C1600

    CPC分类号: H01L21/68735 H01L21/68785

    摘要: A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.

    摘要翻译: 提供了一种具有可移除的边缘环的衬底支撑件,其由具有比衬底支撑件的热膨胀系数(CTE)低的材料制成。 边缘环和基板支撑件配置为销和槽联接。 具体来说,边缘环或衬底支撑件包括多个销,并且边缘环或衬底支撑件中的另一个包括可以插入销的多个中空区域或狭槽。 所述槽至少与所述多个销中相应的销一样宽,并且在所述基板支撑件在热循环期间膨胀和收缩的方向上延伸。 每个狭槽的长度足以补偿基板支撑件的CTE与边缘环的CTE之间的差异,在该设备暴露于该处理温度的范围内。 优选地,基座由铝制成,并且边缘环由陶瓷制成。 限定器间隙可以限定在衬底支撑件的表面和净化环的表面之间,以便限制流过位于衬底支撑件上的衬底的边缘的吹扫气体的体积。 净化气体输送通道可以具有暴露的出口并且可以向上成角度以便于清洁。

    Apparatus for aligning a wafer
    6.
    发明授权

    公开(公告)号:US06436192B1

    公开(公告)日:2002-08-20

    申请号:US09481055

    申请日:2000-01-11

    IPC分类号: C23C1600

    摘要: A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

    Method for aligning a wafer
    7.
    发明授权
    Method for aligning a wafer 失效
    对准晶片的方法

    公开(公告)号:US6063440A

    公开(公告)日:2000-05-16

    申请号:US893461

    申请日:1997-07-11

    摘要: A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

    摘要翻译: 在真空室内的支撑构件上对准晶片的方法包括在对准晶片之前将真空室内的压力增加至至少约1Torr。 将晶片引入到支撑构件上的真空室中,将压力增加至至少约1乇,并将支撑构件提升到阴影环中,阴影环具有构造成将晶圆漏斗到中心对准的截头圆锥形内腔 位置。

    Clamshell and small volume chamber with fixed substrate support
    9.
    发明授权
    Clamshell and small volume chamber with fixed substrate support 有权
    蛤壳式和小容积室具有固定衬底支撑

    公开(公告)号:US06866746B2

    公开(公告)日:2005-03-15

    申请号:US10302774

    申请日:2002-11-21

    摘要: Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.

    摘要翻译: 本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。 处理室的一个实施例包括具有基板接收表面的固定基板支撑件,围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。 泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。 腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。 处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。 第一组件包括第一组件主体,其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。 铰链组件联接第一组件和第二组件。 第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。

    Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
    10.
    发明授权
    Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 失效
    用于汽化用于CVD或原子层沉积的固体前体的装置和方法

    公开(公告)号:US06718126B2

    公开(公告)日:2004-04-06

    申请号:US09953451

    申请日:2001-09-14

    申请人: Lawrence C. Lei

    发明人: Lawrence C. Lei

    IPC分类号: C23C1400

    CPC分类号: C23C16/4481

    摘要: An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.

    摘要翻译: 提供了一种用于有效和可控地汽化固体前体材料的装置和方法。 特别地,本发明提供了一种装置,其包括限定密封的内部容积的壳体,所述壳体具有用于接收载气的入口,用于施加固体前体的壳体内的至少一个表面,以及用于加热固体的加热构件 前体 加热构件可以位于壳体内或壳体内的表面中。 表面可以是杆,挡板,网格或光栅,并且优选地是s形或锥形的。 可选地,出口将壳体连接到反应室。 还提供了使用本发明的设备来蒸发固体前体的方法。