公开(公告)号：US20130098477A1

公开(公告)日：2013-04-25

申请号：US13653952

申请日：2012-10-17

申请人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

发明人： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC分类号： F17D3/00

CPC分类号： F17D3/00 ,  Y10T137/7833

摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US08491967B2

公开(公告)日：2013-07-23

申请号：US12206705

申请日：2008-09-08

申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

IPC分类号： B05D5/12

CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

公开(公告)号：US20100062614A1

公开(公告)日：2010-03-11

申请号：US12206705

申请日：2008-09-08

申请人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

发明人： Paul F. Ma ,  Joseph F. Aubuchon ,  Mei Chang ,  Steven H. Kim ,  Dien-Yeh Wu ,  Norman M. Nakashima ,  Mark Johnson ,  Roja Palakodeti

IPC分类号： H01L21/314

CPC分类号： C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

摘要： Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

摘要翻译： 本发明的实施例提供了一种处理室的内表面和在诸如原子层沉积（ALD）或化学气相沉积（CVD））的气相沉积工艺期间沉积材料的方法。 在一个实施方案中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在随后的沉积工艺期间使用的金属 - 有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热解形成。 在一个实例中，在进行气相沉积工艺之前，在预处理过程中，处理室和基板暴露于烷基胺化合物（例如二甲胺），其利用具有烷基氨基配体的金属 - 有机化学前体，例如五（二甲基氨基）钽 （PDMAT）。

公开(公告)号：US07780789B2

公开(公告)日：2010-08-24

申请号：US11923589

申请日：2007-10-24

申请人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven H. Kim ,  Schubert S. Chu ,  Paul F. Ma ,  Joseph F. Aubuchon

发明人： Dien-Yeh Wu ,  Puneet Bajaj ,  Xiaoxiong Yuan ,  Steven H. Kim ,  Schubert S. Chu ,  Paul F. Ma ,  Joseph F. Aubuchon

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.

摘要翻译： 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的腔室，其包括腔室盖组件，该室盖组件包含沿腔室盖组件的中心部分处的中心轴线延伸的扩张通道，以及从膨胀通道延伸到周边部分的锥形底面 室盖组件。 锥形底表面的形状和尺寸可以基本上覆盖基板接收表面。 腔室盖组件还包括连接到气体通道的导管，另一导管与另一个气体通道连接，两个气体通道绕过扩张通道。 每个通道具有延伸到扩张通道中的多个入口，并且入口被定位成提供通过膨胀通道的圆形气流。

公开(公告)号：US20130196507A1

公开(公告)日：2013-08-01

申请号：US13742596

申请日：2013-01-16

申请人： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

发明人： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

IPC分类号： H01L21/768

CPC分类号： H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

摘要： Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

摘要翻译： 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：US08642468B2

公开(公告)日：2014-02-04

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US20130292806A1

公开(公告)日：2013-11-07

申请号：US13905932

申请日：2013-05-30

申请人： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

发明人： Paul F. Ma ,  Jennifer Meng Tseng ,  Mei Chang ,  Annamalai Lakshmanan ,  Jing Tang

IPC分类号： H01L29/06 ,  H01L21/02

CPC分类号： H01L29/06 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/02104 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods of forming a semiconductor device. Certain methods comprises depositing a film comprising manganese nitride over a dielectric; depositing a copper seed layer over the film; and depositing a copper fill layer over the copper seed layer. Also described are semiconductor devices. Certain semiconductor devices comprise a low-k dielectric layer; a manganese nitride layer overlying the low-k dielectric layer; a seed layer selected from a copper seed layer or electrochemical deposition seed layer overlying the manganese nitride layer; a copper layer overlying the copper seed layer.

摘要翻译： 描述了形成半导体器件的方法。 某些方法包括在电介质上沉积包含氮化锰的膜; 在该膜上沉积铜种子层; 以及在铜种子层上沉积铜填充层。 还描述了半导体器件。 某些半导体器件包括低k电介质层; 覆盖低k电介质层的氮化锰层; 选自铜籽晶层或覆盖氮化锰层的电化学沉积种子层的晶种层; 覆铜层的铜层。

公开(公告)号：US20130140698A1

公开(公告)日：2013-06-06

申请号：US13689871

申请日：2012-11-30

申请人： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

发明人： Annamalai Lakshmanan ,  Paul F. Ma ,  Mei Chang ,  Jennifer Shan

IPC分类号： H01L21/768 ,  H01L23/538

摘要： Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.

摘要翻译： 描述的是掺杂的TaN膜，以及用于提供掺杂的TaN膜的方法。 具有Ru，Cu，Co，Mn，Al，Mg，Cr，Nb，Ti和/或V的掺杂TaN膜允许增强TaN膜的铜阻挡性能。 还描述了提供具有包含掺杂TaN的第一层和包含Ru和Co中的一种或多种的第二层的膜的方法，并且可选地掺杂第二层。

公开(公告)号：US20110263115A1

公开(公告)日：2011-10-27

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/3205

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US08828866B1

公开(公告)日：2014-09-09

申请号：US13927460

申请日：2013-06-26

申请人： Guodan Wei ,  Paul F. Ma

发明人： Guodan Wei ,  Paul F. Ma

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/321 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/823842 ,  H01L29/456

摘要： Provided are methods of forming a ternary metal nitride film and more specifically, a TaSiN film. A metal nitride film, or TaN film, is deposited on a substrate with plasma treatment. A SiN layer is deposited on the metal nitride, or TaN, film to form a metal-SiN, or TaSiN, film. The film is then annealed to provide a metal nitride film with stable resistivity.

摘要翻译： 提供了形成三元金属氮化物膜的方法，特别是TaSiN膜。 金属氮化物膜或TaN膜通过等离子体处理沉积在衬底上。 在金属氮化物或TaN膜上沉积SiN层以形成金属SiN或TaSiN膜。 然后将膜退火以提供具有稳定电阻率的金属氮化物膜。