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239 条记录 (耗时 0.034 秒)

    Multi-Component Film Deposition
    1.
    发明申请
    Multi-Component Film Deposition 审中-公开
    多组分膜沉积

    公开(公告)号：US20130143415A1

    公开(公告)日：2013-06-06

    申请号：US13308849

    申请日：2011-12-01

    申请人： Joseph Yudovsky ,  Mei Chang ,  Steven D. Marcus ,  Garry K. Kwong

    发明人： Joseph Yudovsky ,  Mei Chang ,  Steven D. Marcus ,  Garry K. Kwong

    IPC分类号： H01L21/31 ,  B67D7/06 ,  C23C16/455

    CPC分类号： C23C16/45551

    摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

    摘要翻译： 提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多数。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

    Apparatus And Process For Atomic Layer Deposition
    2.
    发明申请
    Apparatus And Process For Atomic Layer Deposition 审中-公开
    用于原子层沉积的装置和工艺

    公开(公告)号：US20120225192A1

    公开(公告)日：2012-09-06

    申请号：US13189692

    申请日：2011-07-25

    申请人： Joseph Yudovsky ,  Garry K. Kwong ,  Mei Chang ,  Anh N. Nguyen ,  David Thompson

    发明人： Joseph Yudovsky ,  Garry K. Kwong ,  Mei Chang ,  Anh N. Nguyen ,  David Thompson

    IPC分类号： C23C16/458 ,  B05D5/12

    CPC分类号： C23C16/45551 ,  C23C16/45527

    摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译： 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Apparatus and Process for Atomic Layer Deposition
    3.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号：US20120225191A1

    公开(公告)日：2012-09-06

    申请号：US13037992

    申请日：2011-03-01

    申请人： Joseph Yudovsky ,  Garry K. Kwong ,  Mei Chang ,  Anh N. Nguyen ,  David Thompson

    发明人： Joseph Yudovsky ,  Garry K. Kwong ,  Mei Chang ,  Anh N. Nguyen ,  David Thompson

    IPC分类号： C23C16/455 ,  B05D5/12

    CPC分类号： C23C16/45551 ,  C23C16/45527

    摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译： 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Methods For Atomic Layer Etching
    4.
    发明申请
    Methods For Atomic Layer Etching 有权
    原子层蚀刻方法

    公开(公告)号：US20140106565A1

    公开(公告)日：2014-04-17

    申请号：US14106166

    申请日：2013-12-13

    申请人： Mei Chang ,  Joseph Yudovsky

    发明人： Mei Chang ,  Joseph Yudovsky

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

    摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

    摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

    Methods for Atomic Layer Etching
    5.
    发明申请
    Methods for Atomic Layer Etching 有权
    原子层蚀刻方法

    公开(公告)号：US20130137267A1

    公开(公告)日：2013-05-30

    申请号：US13307524

    申请日：2011-11-30

    申请人： Mei Chang ,  Joseph Yudovsky

    发明人： Mei Chang ,  Joseph Yudovsky

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

    摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

    摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

    Apparatus and Method for Providing Uniform Flow of Gas
    6.
    发明申请
    Apparatus and Method for Providing Uniform Flow of Gas 有权
    提供气体均匀流动的装置和方法

    公开(公告)号：US20130263944A1

    公开(公告)日：2013-10-10

    申请号：US13827510

    申请日：2013-03-14

    申请人： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

    发明人： Faruk Gungor ,  Dien-Yeh Wu ,  Joseph Yudovsky ,  Mei Chang

    IPC分类号： F17D3/00

    CPC分类号： F17D3/00 ,  F17C1/00 ,  F17C2270/0518 ,  Y10T137/7833 ,  Y10T137/8593 ,  Y10T137/87249

    摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    摘要翻译： 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

    Support assembly
    9.
    发明授权
    Support assembly 有权

    公开(公告)号：US10593539B2

    公开(公告)日：2020-03-17

    申请号：US13457421

    申请日：2012-04-26

    申请人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    发明人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    IPC分类号： B23K10/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

    摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

    Method for tuning a deposition rate during an atomic layer deposition process
    10.
    发明授权
    Method for tuning a deposition rate during an atomic layer deposition process 有权
    在原子层沉积过程中调整沉积速率的方法

    公开(公告)号：US09418890B2

    公开(公告)日：2016-08-16

    申请号：US14279260

    申请日：2014-05-15

    申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

    CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

    摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。