Apparatus and Process for Atomic Layer Deposition
    1.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号:US20120135609A1

    公开(公告)日:2012-05-31

    申请号:US12956650

    申请日:2010-11-30

    IPC分类号: H01L21/30 B67D7/06

    摘要: Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.

    摘要翻译: 提供了用于在例如原子层沉积(ALD)工艺期间形成膜的装置中使用的气体分配板(喷头)。 气体分配板包括限定厚度和外围边缘的主体,并且具有面向基板的前表面。 前表面具有中心区域,其具有多个开口,其被配置成在衬底上分配工艺气体和具有倾斜区域的聚焦环。 聚焦环与中心区域同心,使得聚焦环处的厚度大于中心区域处的厚度。

    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE
    2.
    发明申请
    METHODS FOR DETERMINING THE QUANTITY OF PRECURSOR IN AN AMPOULE 审中-公开
    用于确定前置放大器数量的方法

    公开(公告)号:US20100305884A1

    公开(公告)日:2010-12-02

    申请号:US12781353

    申请日:2010-05-17

    IPC分类号: G01N7/00

    CPC分类号: C23C16/4481

    摘要: Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

    摘要翻译: 本文提供了确定安瓿中前体的量的方法。 在一些实施方案中,用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力,第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。

    Apparatus and Method for Providing Uniform Flow of Gas
    3.
    发明申请
    Apparatus and Method for Providing Uniform Flow of Gas 有权
    提供气体均匀流动的装置和方法

    公开(公告)号:US20130263944A1

    公开(公告)日:2013-10-10

    申请号:US13827510

    申请日:2013-03-14

    IPC分类号: F17D3/00

    摘要: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

    摘要翻译: 提供了具有输送通道的气体分配设备,其具有入口端,出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源,出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备,缠绕在一起的螺旋输送通道,分流输送通道,合并输送通道和成形输送通道,其中入口端和出口端构造成用于在输送通道内快速交换气体。

    ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT
    5.
    发明申请
    ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 有权
    原子层沉积室多重注入

    公开(公告)号:US20110223334A1

    公开(公告)日:2011-09-15

    申请号:US13043189

    申请日:2011-03-08

    IPC分类号: C23C16/455 C23C16/458

    摘要: Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

    摘要翻译: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中,室盖组件包括具有上部和下部的通道,其中通道沿着中心轴线延伸,壳体具有内部区域并且至少部分地限定两个或更多个环形通道,插入件设置在 所述内部区域并且限定所述上部,所述上部与所述两个或多个环形通道流体联接,以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

    Atomic layer deposition chamber with multi inject
    6.
    发明授权
    Atomic layer deposition chamber with multi inject 有权
    具有多次注入的原子层沉积室

    公开(公告)号:US09175394B2

    公开(公告)日:2015-11-03

    申请号:US13043189

    申请日:2011-03-08

    摘要: Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

    摘要翻译: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中,室盖组件包括具有上部和下部的通道,其中通道沿着中心轴线延伸,壳体具有内部区域并且至少部分地限定两个或更多个环形通道,插入件设置在 所述内部区域并且限定所述上部,所述上部与所述两个或多个环形通道流体联接,以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

    Apparatus And Process For Atomic Layer Deposition
    7.
    发明申请
    Apparatus And Process For Atomic Layer Deposition 审中-公开
    用于原子层沉积的装置和工艺

    公开(公告)号:US20120225192A1

    公开(公告)日:2012-09-06

    申请号:US13189692

    申请日:2011-07-25

    IPC分类号: C23C16/458 B05D5/12

    CPC分类号: C23C16/45551 C23C16/45527

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Apparatus and Process for Atomic Layer Deposition
    8.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号:US20120225191A1

    公开(公告)日:2012-09-06

    申请号:US13037992

    申请日:2011-03-01

    IPC分类号: C23C16/455 B05D5/12

    CPC分类号: C23C16/45551 C23C16/45527

    摘要: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    摘要翻译: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Electronically actuated valve
    9.
    发明授权
    Electronically actuated valve 有权
    电动阀

    公开(公告)号:US07222636B2

    公开(公告)日:2007-05-29

    申请号:US10644598

    申请日:2003-08-20

    IPC分类号: F16K31/06

    摘要: The present invention relates to a method and apparatus for delivery of reactants to a substrate processing chamber. An electronically controlled valve assembly is provided for rapid delivery of pulses of reactants to the chamber. The valve assembly comprises a valve body having a valve seat, and at least one gas inlet and one gas outlet below the seat. The piston is selectively movable within the valve body to open and close the valve. In order to actuate the valve assembly, current is sent to a solenoid coil within the valve body. The solenoid coil generates a magnetic field that acts on an adjacent magnetic member. The solenoid coil, magnetic member and piston are arranged such that relative movement of the coil and magnetic member cause the piston to be moved relative to the valve seat.

    摘要翻译: 本发明涉及一种将反应物递送到基板处理室的方法和装置。 提供电子控制阀组件,用于将反应物的脉冲快速输送到室。 阀组件包括具有阀座的阀体,以及座下方的至少一个气体入口和一个气体出口。 活塞可选择性地在阀体内移动以打开和关闭阀。 为了致动阀组件,电流被送到阀体内的螺线管线圈。 螺线管线圈产生作用在相邻磁性部件上的磁场。 电磁线圈,磁性构件和活塞被布置成使得线圈和磁性构件的相对运动导致活塞相对于阀座移动。

    Reactant Delivery System For ALD/CVD Processes
    10.
    发明申请
    Reactant Delivery System For ALD/CVD Processes 审中-公开
    ALD / CVD工艺的反应物输送系统

    公开(公告)号:US20130019960A1

    公开(公告)日:2013-01-24

    申请号:US13554487

    申请日:2012-07-20

    IPC分类号: F16K49/00 F16K11/00

    摘要: Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule.

    摘要翻译: 提供了用于产生化学前体的装置和方法。 该装置包括要连接到安瓿的入口管线和要连接到安瓿的出口管线。 入口管线具有用于控制载气进入安瓿和出口管线的入口阀,其具有出口阀以控制离开安瓿的流量。 旁通阀允许载气旁路安瓿并吹扫出口阀,而不会使气体流入安瓿。