公开(公告)号：US20050158664A1

公开(公告)日：2005-07-21

申请号：US10760927

申请日：2004-01-20

申请人： Joshua Tseng ,  Ping Chuang ,  Hung-Jung Tu ,  Ching-Ya Wang ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

发明人： Joshua Tseng ,  Ping Chuang ,  Hung-Jung Tu ,  Ching-Ya Wang ,  Yu-Liang Lin ,  Henry Lo ,  Mei-Sheng Zhou

IPC分类号： G03F7/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/311 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76802 ,  G03F7/422 ,  G03F7/423 ,  G03F7/425 ,  G03F7/426 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/76877

摘要： A method of integrating a post-etching cleaning process with deposition for a semiconductor device. A substrate having a damascene structure formed by etching a dielectric layer formed thereon using an overlying photoresist mask as an etching mask is provided. A cleaning process is performed by a supercritical fluid to remove the photoresist mask and post-etching by-products. An interconnect layer is formed in-situ in the damascene structure using the supercritical fluid as a reaction medium, wherein the cleaning process and the subsequent interconnect layer formation are performed in one process chamber or in different process chambers of a processing tool.

摘要翻译： 将后蚀刻清洗工艺与用于半导体器件的沉积集成的方法。 提供具有通过使用覆盖光致抗蚀剂掩模蚀刻形成在其上的介电层作为蚀刻掩模形成的镶嵌结构的基板。 通过超临界流体进行清洁处理以除去光致抗蚀剂掩模和后蚀刻副产物。 使用超临界流体作为反应介质，在镶嵌结构中原位形成互连层，其中清洁工艺和随后的互连层形成在一个处理室中或在处理工具的不同处理室中进行。

公开(公告)号：US20050186753A1

公开(公告)日：2005-08-25

申请号：US10786187

申请日：2004-02-25

申请人： Ping-Hsu Chen ,  Ping Chuang ,  Mei-Sheng Zhou ,  Francis Ko ,  Huxley Lee ,  Joshua Tseng ,  Henry Lo

发明人： Ping-Hsu Chen ,  Ping Chuang ,  Mei-Sheng Zhou ,  Francis Ko ,  Huxley Lee ,  Joshua Tseng ,  Henry Lo

IPC分类号： G03F9/00 ,  H01J37/304 ,  H01L21/302 ,  H01L21/461 ,  H01L21/76 ,  H01L23/544

CPC分类号： H01L23/544 ,  G03F9/708 ,  G03F9/7084 ,  H01J37/3045 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment marks, using focused ion beam (FIB) technology. In a preferred embodiment, a method for exposing alignment marks on a substrate can be carried out by first providing a substrate that has multiple alignment marks provided thereon and at least one overlying opaque layer, typically but not necessarily metal, deposited on the substrate above the alignment marks. A focused ion beam is then directed against the overlying opaque layer or layers to cut through the layer or layers and expose the alignment marks on the substrate. A noble gas, preferably argon, is typically used as the ion source for the focused ion beam.

摘要翻译： 一种新的和改进的方法，通过使用聚焦离子束（FIB）技术，通过局部切割穿过对准标记上方的基板上的金属或非金属层或层而在基板上曝光对准标记。 在优选实施例中，用于在衬底上曝光对准标记的方法可以通过首先提供其上设置有多个对准标记的衬底和沉积在衬底上方的至少一个上覆的不透明层（通常但不一定是金属） 对齐标记 然后将聚焦离子束定向到上覆的不透明层或层以切穿该层或者暴露衬底上的对准标记。 惰性气体，优选氩气通常用作聚焦离子束的离子源。

公开(公告)号：US07332449B2

公开(公告)日：2008-02-19

申请号：US11240965

申请日：2005-09-30

申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/963 ,  H01L2924/00

摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

摘要翻译： 一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口 金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及 包括可选的介电绝缘层结合剂。

公开(公告)号：US20070241455A1

公开(公告)日：2007-10-18

申请号：US11240965

申请日：2005-09-30

申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo ,  Jean Wang

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10S438/963 ,  H01L2924/00

摘要： A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.

摘要翻译： 一种通过提供用于抗蚀剂灰化的单一工艺溶液来形成镶嵌结构的方法，同时避免和修复等离子体蚀刻损伤以及去除介电层中的吸收的水分，所述方法包括提供包括最上面的光致抗蚀剂层和延伸穿过的开口 金属间电介质（IMD）层的厚度以暴露下面的金属区域; 并且进行至少一种超临界流体处理，其包括超临界CO 2，第一共溶剂和选自金属缓蚀剂和金属抗氧化剂的添加剂以除去最上面的光致抗蚀剂层，以及 包括可选的介电绝缘层结合剂。

公开(公告)号：US20060073697A1

公开(公告)日：2006-04-06

申请号：US10956640

申请日：2004-09-30

申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

IPC分类号： H01L21/4763

CPC分类号： H01L21/76826 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76877

摘要： A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

摘要翻译： 一种用于处理金属间电介质（IMD）层以改善机械强度和/或修复等离子体蚀刻损伤的方法，包括提供含有低K氧化硅的介电绝缘层; 并对包括超临界CO 2的低K电介质绝缘层进行超临界流体处理，并且包括具有大于Si-H的键合能力的形成硅键的取代基的溶剂至少替代 一部分Si-H与形成硅键的取代基键合。

公开(公告)号：US07387973B2

公开(公告)日：2008-06-17

申请号：US10956640

申请日：2004-09-30

申请人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

发明人： Ching-Ya Wang ,  Joshua Tseng ,  Henry Lo

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76826 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76877

摘要： A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.

摘要翻译： 一种用于处理金属间电介质（IMD）层以改善机械强度和/或修复等离子体蚀刻损伤的方法，包括提供含有低K氧化硅的介电绝缘层; 并对包括超临界CO 2的低K电介质绝缘层进行超临界流体处理，并且包括具有大于Si-H的键合能力的形成硅键的取代基的溶剂至少替代 一部分Si-H与形成硅键的取代基键合。

公开(公告)号：US07544606B2

公开(公告)日：2009-06-09

申请号：US11142215

申请日：2005-06-01

申请人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

发明人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/32115 ,  H01L21/7684 ,  H01L21/76877

摘要： A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.

摘要翻译： 提供了一种在低k电介质层中形成金属特征的方法。 该方法包括在低k电介质层中形成开口，使用旋转方法在​​低k电介质层上形成具有基本平坦表面的金属层，并且对金属层进行无应力的研磨。 优选地，金属层包括铜或铜合金。 金属层优选地包括具有基本非平面表面的第一子层和在第一子层上具有基本平坦表面的第二子层。

公开(公告)号：US20060276030A1

公开(公告)日：2006-12-07

申请号：US11142215

申请日：2005-06-01

申请人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

发明人： Jean Wang ,  Chia-Ming Yang ,  Henry Lo ,  Joshua Tseng

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/32115 ,  H01L21/7684 ,  H01L21/76877

摘要： A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar surface over the low-k dielectric layer using spin-on method, and stress free polishing the metal layer. Preferably, the metal layer comprises copper or copper alloys. The metal layer preferably includes a first sub layer having a substantially non-planar surface and a second sub layer having a substantially planar surface on the first sub layer.

摘要翻译： 提供了一种在低k电介质层中形成金属特征的方法。 该方法包括在低k电介质层中形成开口，使用旋转方法在​​低k电介质层上形成具有基本平坦表面的金属层，并且对金属层进行无应力的研磨。 优选地，金属层包括铜或铜合金。 金属层优选地包括具有基本非平面表面的第一子层和在第一子层上具有基本平坦表面的第二子层。

公开(公告)号：US09024299B2

公开(公告)日：2015-05-05

申请号：US12578439

申请日：2009-10-13

申请人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

发明人： Zilan Li ,  Joshua Tseng ,  Thomas Witters ,  Stefan De Gendt

IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L21/823842 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

摘要： A method for manufacturing a dual work function semiconductor device and the device made thereof are disclosed. In one aspect, a method includes providing a gate dielectric layer over a semiconductor substrate. The method further includes forming a metal layer over the gate dielectric layer. The method further includes forming a layer of gate filling material over the metal layer. The method further includes patterning the gate dielectric layer, the metal layer and the gate filling layer to form a first and a second gate stack. The method further includes removing the gate filling material only from the second gate stack thereby exposing the underlying metal layer. The method further includes converting the exposed metal layer into an metal oxide layer. The method further includes reforming the second gate stack with another gate filling material.

摘要翻译： 公开了一种制造双功能半导体器件的方法及其制造的器件。 一方面，一种方法包括在半导体衬底上提供栅介质层。 该方法还包括在栅介电层上形成金属层。 该方法还包括在金属层上形成栅极填充材料层。 该方法还包括图案化栅极介电层，金属层和栅极填充层以形成第一和第二栅极叠层。 该方法还包括仅从第二栅极堆叠去除栅极填充材料，从而暴露下面的金属层。 该方法还包括将暴露的金属层转变成金属氧化物层。 该方法还包括用另一种栅极填充材料重新构造第二栅极堆叠。

公开(公告)号：US20090094371A1

公开(公告)日：2009-04-09

申请号：US12331257

申请日：2008-12-09

申请人： Kand Ly ,  Joshua Tseng ,  Steve McCanne

发明人： Kand Ly ,  Joshua Tseng ,  Steve McCanne

IPC分类号： G06F15/16

CPC分类号： H04L67/14 ,  H04L67/2814 ,  H04L67/2876

摘要： Two or more network traffic processors connected with the same LAN and WAN are identified as neighbors. Neighboring network traffic processors cooperate to overcome asymmetric routing, thereby ensuring that related sequences of network traffic are processed by the same network proxy. A network proxy can be included in a network traffic processor or as a standalone unit. A network traffic processor that intercepts a new connection initiation by a client assigns a network proxy to handle all messages associated with that connection. The network traffic processor conveys connection information to neighboring network traffic processors. The neighboring network traffic processors use the connection information to redirect network traffic associated with the connection to the assigned network proxy, thereby overcoming the effects of asymmetric routing. The assigned network proxy handles redirected network traffic in much the same way that it would handle network traffic received directly.

摘要翻译： 与同一LAN和WAN连接的两个或多个网络流量处理器被识别为邻居。 相邻的网络流量处理器合作克服非对称路由，从而确保相同的网络流量的相关序列被相同的网络代理处理。 网络代理可以包含在网络流量处理器中或独立的单元中。 拦截客户端的新连接启动的网络流量处理器分配网络代理来处理与该连接相关联的所有消息。 网络流量处理器将连接信息传递给相邻网络流量处理器。 相邻网络流量处理器使用连接信息将与连接相关联的网络流量重定向到所分配的网络代理，从而克服非对称路由的影响。 分配的网络代理以与处理直接接收的网络流量大致相同的方式处理重定向的网络流量。