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    X-ray mask pellicle
    1.
    发明授权
    X-ray mask pellicle 失效
    X射线面具防护薄膜

    公开(公告)号：US5793836A

    公开(公告)日：1998-08-11

    申请号：US716657

    申请日：1996-09-06

    申请人： Juan R. Maldonado ,  Raul E. Acosta ,  Marie Angelopoulos ,  Fuad E. Doany ,  Chandrasekhar Narayan ,  Andrew T. S. Pomerene ,  Jane M. Shaw ,  Kurt R. Kimmel

    发明人： Juan R. Maldonado ,  Raul E. Acosta ,  Marie Angelopoulos ,  Fuad E. Doany ,  Chandrasekhar Narayan ,  Andrew T. S. Pomerene ,  Jane M. Shaw ,  Kurt R. Kimmel

    IPC分类号： G03F1/00 ,  G03F1/22 ,  G03F1/62 ,  G03F1/64 ,  G03F7/20 ,  H01L21/027 ,  H05K1/00

    CPC分类号： G03F1/62 ,  G03F1/22 ,  G03F1/64 ,  G03F7/70691

    摘要： An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.

    摘要翻译： X射线掩模防护薄膜组件能够保护X射线掩模免受污染物和晶片与掩模的X射线吸收材料的接触。 X射线掩模防护薄膜是足够薄的，以允许所需掩模的X射线暴露于晶片间隙，而且在X射线光刻中使用的是足够耐用的，可更换的，坚固的和耐X射线的。 将覆盖X​​射线掩模图案区域的薄（有机或无机）X射线掩模防护薄膜组件制成薄膜并附着在支撑环上。 为了覆盖X射线掩模中的吸收体图案而定制的防护薄膜的选定区域被蚀刻以将其厚度减小到低于2μm。 如果防护薄膜的薄膜本身不是导电的，则可以在两侧涂覆薄导电膜。 在替代实施例中，防护薄膜组件和X射线掩模之间的分离可以通过以阶梯轮廓形成掩模来实现。

    Highly collimating tapered light guide for uniform illumination of flat panel displays
    7.
    发明授权
    Highly collimating tapered light guide for uniform illumination of flat panel displays 有权
    高准直锥形光导，用于平板显示器的均匀照明

    公开(公告)号：US06648485B1

    公开(公告)日：2003-11-18

    申请号：US09711041

    申请日：2000-11-13

    申请人： Evan G. Colgan ,  Fuad E. Doany ,  Akiko Nishikai ,  Rama N. Singh ,  Masaru Suzuki ,  Yoichi Taira

    发明人： Evan G. Colgan ,  Fuad E. Doany ,  Akiko Nishikai ,  Rama N. Singh ,  Masaru Suzuki ,  Yoichi Taira

    IPC分类号： F21V704

    CPC分类号： G02B6/0016 ,  G02B6/0031 ,  G02B6/0046

    摘要： A light guide system has a light guide having a first end portion opposite a second end portion. The light guide provides a first surface and a second surface between the first and second end portions, and the second surface is inclined relative to the first surface. A light source is disposed along the first end portion on a first axis. A light redistribution device is disposed on an entrance of the light guide for receiving light from the light source and redistributing a portion of the light perpendicular to the first axis to provide a uniform light distribution from the first surface.

    摘要翻译： 导光系统具有导光体，该导光体具有与第二端部相对的第一端部。 光导件在第一和第二端部之间提供第一表面和第二表面，并且第二表面相对于第一表面倾斜。 光源沿着第一端部设置在第一轴上。 光再分配装置设置在光导的入口处，用于接收来自光源的光并且重新分配垂直于第一轴的光的一部分以提供从第一表面均匀的光分布。

    DUV laser annealing and stabilization of SiCOH films
    10.
    发明授权
    DUV laser annealing and stabilization of SiCOH films 失效
    DUV激光退火和SiCOH膜的稳定化

    公开(公告)号：US07560794B2

    公开(公告)日：2009-07-14

    申请号：US11693409

    申请日：2007-03-29

    申请人： Alessandro C. Callegari ,  Stephen A. Cohen ,  Fuad E. Doany

    发明人： Alessandro C. Callegari ,  Stephen A. Cohen ,  Fuad E. Doany

    IPC分类号： H01L29/00

    CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

    摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dielectric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

    摘要翻译： 与现有技术的电介质膜相比，包括具有改进的绝缘性能的Si，C，O和H原子（以下称为SiCOH）的电介质膜的制造方法，包括不经受本发明的深超极化的现有技术的SiCOH介电膜， 紫色（DUV）。 改进的性能包括减少的电流泄漏，其不会不利地影响（增加）SiCOH介电膜的介电常数。 根据本发明，通过使沉积的SiCOH电介质膜进行DUV激光退火，获得了表现出减小的电流泄漏和改进的可靠性的SiCOH电介质膜。 本发明的DUV激光退火工序可能从膜中除去弱结合的C，从而提高漏电流。