公开(公告)号：US20080286977A1

公开(公告)日：2008-11-20

申请号：US12220233

申请日：2008-07-22

申请人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

发明人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/31122

摘要： A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

摘要翻译： 一种由优选含有至少60％的碳和10至40％氢气的无定形碳组成的碳基硬掩模层的方法。 使用由H 2 N 2 N 2 N 2和CO组成的蚀刻气体通过等离子体蚀刻来打开硬掩模。蚀刻优选在具有HF偏置的等离子体蚀刻反应器中进行 基座电极和电容VHF偏置花洒。

公开(公告)号：US20070077780A1

公开(公告)日：2007-04-05

申请号：US11244422

申请日：2005-10-05

申请人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

发明人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/31122

摘要： A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

摘要翻译： 一种由优选含有至少60％的碳和10至40％氢气的无定形碳组成的碳基硬掩模层的方法。 使用由H 2 N 2 N 2 N 2和CO组成的蚀刻气体通过等离子体蚀刻来打开硬掩模。蚀刻优选在具有HF偏置的等离子体蚀刻反应器中进行 基座电极和电容VHF偏置花洒。

公开(公告)号：US07432210B2

公开(公告)日：2008-10-07

申请号：US11244422

申请日：2005-10-05

申请人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

发明人： Judy Wang ,  Shing-Li Sung ,  Shawming Ma ,  Bryan Pu

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/31122

摘要： A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

摘要翻译： 一种由优选含有至少60％的碳和10至40％氢气的无定形碳组成的碳基硬掩模层的方法。 使用由H 2 N 2 N 2 N 2和CO组成的蚀刻气体通过等离子体蚀刻来打开硬掩模。蚀刻优选在具有HF偏置的等离子体蚀刻反应器中进行 基座电极和电容VHF偏置花洒。

公开(公告)号：US07541292B2

公开(公告)日：2009-06-02

申请号：US11414027

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

IPC分类号： H01L21/461

CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

公开(公告)号：US20050090118A1

公开(公告)日：2005-04-28

申请号：US10823364

申请日：2004-04-12

申请人： Steven Shannon ,  Dennis Grimard ,  Theodoros Panagopoulos ,  Daniel Hoffman ,  Michael Chafin ,  Troy Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Pu

发明人： Steven Shannon ,  Dennis Grimard ,  Theodoros Panagopoulos ,  Daniel Hoffman ,  Michael Chafin ,  Troy Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Pu

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

摘要翻译： 提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。 该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性 形成在处理室中。

公开(公告)号：US5740009A

公开(公告)日：1998-04-14

申请号：US758531

申请日：1996-11-29

申请人： Bryan Pu ,  Hongching Shan ,  Kuang-Han Ke ,  Michael Welch ,  Semyon Sherstinsky ,  Alfred Mak ,  Ling Chen ,  Sue Zhang ,  Leonel Arturo Zuniga ,  Samuel C. Wilson

发明人： Bryan Pu ,  Hongching Shan ,  Kuang-Han Ke ,  Michael Welch ,  Semyon Sherstinsky ,  Alfred Mak ,  Ling Chen ,  Sue Zhang ,  Leonel Arturo Zuniga ,  Samuel C. Wilson

IPC分类号： H01L21/683 ,  H01L21/687 ,  H02N13/00

CPC分类号： H01L21/68735 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.

摘要翻译： 用于保持具有改进的晶片和卡盘边缘保护的晶片的装置包含限定基座的保护环，并被偏置以与晶片的背面恒定接触。 偏置元件均匀地将保护环偏压成与晶片的周缘接触。 保护环具有环形平面形式，其环绕静电卡盘以将晶片保持在文具位置。 环的垂直行程受到由突出于保护环上的聚焦环的一部分形成的硬停止的限制。 在将晶片放置在卡盘上并且夹持力能够实现之后，夹紧力容易地克服保护环上的偏压力并且晶片搁置在卡盘支撑表面上。 保护环接触晶片的背面以确保基座和静电卡盘不暴露于等离子体，并且当使用硅保护环时，晶片的有效面积延伸超过晶片的物理尺寸以便于 在晶片上更均匀的等离子体分布。

公开(公告)号：US08609546B2

公开(公告)日：2013-12-17

申请号：US12744588

申请日：2008-11-18

申请人： Wonchul Lee ,  Qian Fu ,  Shenjian Liu ,  Bryan Pu

发明人： Wonchul Lee ,  Qian Fu ,  Shenjian Liu ,  Bryan Pu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32136

摘要： A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.

摘要翻译： 提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。 稳态蚀刻气体流过。 提供稳态RF功率以从蚀刻气体形成等离子体。 在稳态蚀刻气流期间提供脉冲偏压，其中脉冲偏压具有1至10,000Hz之间的频率。 使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

公开(公告)号：US20110151670A1

公开(公告)日：2011-06-23

申请号：US12744012

申请日：2008-11-13

申请人： Wonchul Lee ,  Qian Fu ,  Shenjian Liu ,  Bryan Pu

发明人： Wonchul Lee ,  Qian Fu ,  Shenjian Liu ,  Bryan Pu

IPC分类号： H01L21/3065

CPC分类号： H01L21/32136 ,  H01L21/32138

摘要： A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.

摘要翻译： 提供了一种用于蚀刻含钨层中不同纵横比的特征的方法。 提供了含有钨蚀刻部件和沉积部件的蚀刻气体。 由所提供的蚀刻气体形成等离子体。 用所提供的等离子体蚀刻用宽而窄的特征图案化的含钨层。

公开(公告)号：US06916399B1

公开(公告)日：2005-07-12

申请号：US09325026

申请日：1999-06-03

申请人： Yan Rozenzon ,  Gil Lavi ,  Evans Y. Lee ,  Dong Ho Choi ,  Matt Hamrah ,  Paul E. Luscher ,  Kaushik Vaidya ,  Bryan Pu ,  Richard Fovell

发明人： Yan Rozenzon ,  Gil Lavi ,  Evans Y. Lee ,  Dong Ho Choi ,  Matt Hamrah ,  Paul E. Luscher ,  Kaushik Vaidya ,  Bryan Pu ,  Richard Fovell

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23C16/00 ,  C23F1/00

CPC分类号： H01L21/67109 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/67069

摘要： The present invention provides a temperature controlled energy transparent window or electrode used to advantage in a substrate processing system. The invention also provides methods associated with controlling lid temperature during processing and for controlling etching processes. In a preferred embodiment the invention provides a fluid supply system for the lid which allows the fluid to flow through a feedthrough and into and out of a channel formed in the window or electrode. The fluid supply system may also mount the window or electrode to a retaining ring which secures the window or electrode to the chamber. In another aspect the invention provides a bonded window or electrode having a first and second plate having a channel formed in the plates so that when the plates are bonded together they form a channel therein through which a temperature controlling fluid can be flowed. An external control system preferably regulates the temperature of the fluid.

摘要翻译： 本发明提供了一种在衬底处理系统中有利的温度控制能量透明窗或电极。 本发明还提供了与处理期间控制盖温度和控制蚀刻工艺相关的方法。 在优选实施例中，本发明提供了一种用于盖的流体供应系统，其允许流体流过馈通并进入和流出形成在窗户或电极中的通道。 流体供应系统还可以将窗口或电极安装到将窗户或电极固定到室的保持环上。 在另一方面，本发明提供了一种具有第一和第二板的键合窗或电极，该第一和第二板具有形成在板中的通道，使得当板接合在一起时，它们在其中形成通道，通过该通道可控制温度控制流体流动。 外部控制系统优选地调节流体的温度。

公开(公告)号：US08231799B2

公开(公告)日：2012-07-31

申请号：US11414026

申请日：2006-04-28

申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。