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33 条记录 (耗时 0.032 秒)

    Retainer ring design for polishing head of chemical-mechanical polishing machine
    5.
    发明授权
    Retainer ring design for polishing head of chemical-mechanical polishing machine 失效
    化学机械抛光机抛光头保持环设计

    公开(公告)号：US6062963A

    公开(公告)日：2000-05-16

    申请号：US59750

    申请日：1998-04-14

    申请人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

    发明人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Hao-Kuang Chiu ,  Kun-Lin Wu

    IPC分类号： B24B37/04 ,  B24B57/02 ,  B24B5/00 ,  B24B47/02

    CPC分类号： B24B37/32 ,  B24B37/042 ,  B24B57/02

    摘要： A chemical-mechanical polishing machine having an improved wafer retainer ring design for the polishing head, comprising a polishing table, a polishing pad, a polishing head and a wafer retainer ring, wherein the polishing pad is above the polishing table, the polishing head is above the polishing pad, and the wafer retainer ring is mounted onto the polishing head. Improvement of the retainer ring design includes the formation of a plurality of guiding holes around the periphery of the retainer ring such that the guiding hole axis follows the centrifugal line produced by a rotating polishing head. Furthermore, the guiding hole has a gradual diffusing structure from the outer inlet to the inner outlet.

    摘要翻译： 一种具有用于抛光头的改进的晶片保持环设计的化学机械抛光机，包括抛光台，抛光垫，抛光头和晶片保持环，其中抛光垫在抛光台之上，抛光头是 在抛光垫上方，并且晶片保持环安装在抛光头上。 保持环设计的改进包括围绕保持环的周边形成多个引导孔，使得引导孔轴线遵循由旋转抛光头产生的离心线。 此外，引导孔具有从外部入口到内部出口的逐渐扩散结构。

    Chemical-mechanical polishing pad
    6.
    发明授权
    Chemical-mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号：US6120366A

    公开(公告)日：2000-09-19

    申请号：US225367

    申请日：1999-01-04

    申请人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Edward Yang ,  Kun-Lin Wu ,  Fu-Yang Yu

    发明人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Edward Yang ,  Kun-Lin Wu ,  Fu-Yang Yu

    IPC分类号： B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  B23F21/03 ,  B24B1/00

    CPC分类号： B24B37/26

    摘要： The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.

    摘要翻译： 本发明提供了一种化学机械抛光垫，其包括多个环形槽和根据流体动力学原理设计的多条流线槽。 抛光垫的流线槽根据源流和涡流的流动方程设计，抛光垫的流线槽将浆料均匀分布在抛光垫上。 使用由流线槽功能的边界层效应计算的流线槽的角度和深度来设计抛光垫的最佳结构。

    Cleaning system with automatically controlled brush pressure
    7.
    发明授权
    Cleaning system with automatically controlled brush pressure 有权
    具有自动控制刷压力的清洁系统

    公开(公告)号：US6119294A

    公开(公告)日：2000-09-19

    申请号：US232203

    申请日：1999-01-14

    申请人： Chien-Hsin Lai ,  Juen-Kuen Lin ,  Kun-Lin Wu ,  Peng-Yih Peng

    发明人： Chien-Hsin Lai ,  Juen-Kuen Lin ,  Kun-Lin Wu ,  Peng-Yih Peng

    IPC分类号： H01L21/00 ,  A46B13/02

    CPC分类号： H01L21/67046 ,  H01L21/6704

    摘要： An auto brush pressure cleaning system is described. The system includes a first pneumatic brush, a second pneumatic brush disposed to align with the first pneumatic brush adjacent and parallel to the first pneumatic brush, and a computer. The system also includes a first brush pressure regulator electrically coupled to the computer and transmitting a first and a second signal to the computer and a second brush pressure regulator coupled to the second pneumatic brush and the first brush pressure regulator through a first three-way valve and electrically coupled to the computer, wherein the second pneumatic brush transmits a third signal to the second brush pressure regulator and to the first brush pressure regulator and the second brush pressure regulator transmits a fourth signal to the computer. The system further includes a first electro-pressure regulator coupled to the first brush pressure regulator and the first pneumatic brush through a second three-way valve, wherein the first brush pressure regulator receives a fifth signal from the first pneumatic brush and a second electro-pressure regulator coupled to the second pneumatic brush and electrically coupled to the first electro-pressure regulator and the computer, wherein the computer transmits a sixth signal to the second and the first electro-pressure regulators.

    摘要翻译： 描述了一种自动刷式压力清洗系统。 该系统包括第一气动刷，设置成与第一气动刷相邻并平行于第一气动刷的第二气动刷以及计算机。 该系统还包括电耦合到计算机并将第一和第二信号传送到计算机的第一电刷压力调节器和通过第一三通阀耦合到第二气动刷和第一电刷压力调节器的第二电刷压力调节器 并且电耦合到所述计算机，其中所述第二气动刷将第三信号传输到所述第二电刷压力调节器和所述第一电刷压力调节器，并且所述第二电刷压力调节器将第四信号传输到所述计算机。 该系统还包括通过第二三通阀联接到第一电刷压力调节器和第一气动刷的第一电压调节器，其中第一电刷压力调节器接收来自第一气动刷的第五信号和第二电 - 耦合到第二气动刷并且电耦合到第一电压调节器和计算机的压力调节器，其中计算机向第二和第一电压调节器传输第六信号。

    Method of preventing overpolishing in a chemical-mechanical polishing operation
    8.
    发明授权
    Method of preventing overpolishing in a chemical-mechanical polishing operation 失效
    在化学机械抛光操作中防止过度抛光的方法

    公开(公告)号：US6030892A

    公开(公告)日：2000-02-29

    申请号：US866131

    申请日：1997-05-30

    申请人： Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

    发明人： Kun-Lin Wu ,  Hao-Kuang Chiu ,  Horng-Bor Lu ,  Jenn-Tarng Lin

    IPC分类号： H01L21/3105 ,  H01L21/4763

    CPC分类号： H01L21/31053

    摘要： A method of preventing overpolishing in a chemical-mechanical polishing operation includes using a spin-on polymer material instead of spin-on glass as the local planarization material. The spin-on polymer layer is further used as a polishing stop layer so as to prevent damage to components due to overpolishing, because the polishing rate of the spin-on polymer layer in a chemical-mechanical polishing operation is, in general, lower than the polishing rate of the silicon dioxide layer formed using plasma enhanced chemical vapor deposition.

    摘要翻译： 在化学机械抛光操作中防止过度抛光的方法包括使用旋涂聚合物材料代替旋涂玻璃作为局部平坦化材料。 旋涂聚合物层进一步用作抛光停止层，以防止由于过度抛光而损坏组分，因为化学机械抛光操作中的旋涂聚合物层的抛光速率通常低于 使用等离子体增强化学气相沉积形成的二氧化硅层的抛光速率。

    Method for forming improved high resistance resistor by treating the surface of polysilicon layer
    9.
    发明授权
    Method for forming improved high resistance resistor by treating the surface of polysilicon layer 有权
    通过处理多晶硅层的表面形成改进的高电阻电阻的方法

    公开(公告)号：US06492240B1

    公开(公告)日：2002-12-10

    申请号：US09661701

    申请日：2000-09-14

    申请人： Shyan-Yhu Wang ,  Kun-Lin Wu

    发明人： Shyan-Yhu Wang ,  Kun-Lin Wu

    IPC分类号： H01L2120

    CPC分类号： H01L28/20 ,  H01L27/0629

    摘要： Performance of the high resistance resistor, which is polysilicon, is improved by treating the surface of the polysilicon layer in mixed signal integrated circuits for ADSL (Asymmetric Digital Subscriber Line) broadband service application. This treated surface of the polysilicon layer will prevent ions in the resistor from out-diffusion when performing an annealing step after forming the resistor.

    摘要翻译： 通过在用于ADSL（非对称数字用户线）宽带服务应用的混合信号集成电路中处理多晶硅层的表面，改善了作为多晶硅的高电阻电阻的性能。 在形成电阻器之后，当执行退火步骤时，多晶硅层的该被处理表面将防止电阻器中的离子向外扩散。

    Method of fabricating shallow trench isolation structure
    10.
    发明授权
    Method of fabricating shallow trench isolation structure 失效
    制造浅沟槽隔离结构的方法

    公开(公告)号：US06190995B1

    公开(公告)日：2001-02-20

    申请号：US09208282

    申请日：1998-12-08

    申请人： Kun-Lin Wu ,  Cheng-Jung Hsu

    发明人： Kun-Lin Wu ,  Cheng-Jung Hsu

    IPC分类号： H01L2176

    CPC分类号： H01L21/76224

    摘要： A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.

    摘要翻译： 一种制造浅沟槽隔离的方法。 在基板上形成氧化硅层。 对氧化硅层进行构图，并且去除衬底的一部分以在衬底内形成沟槽。 衬垫氧化物层形成在沟槽的侧壁上。 在衬底上形成绝缘层并填充在沟槽中。 通过CMP去除绝缘层的一部分以暴露氧化硅层。 去除氧化硅层并完成STI结构。