公开(公告)号：US08975118B2

公开(公告)日：2015-03-10

申请号：US13701277

申请日：2011-04-13

申请人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L27/088 ,  H01L23/48 ,  B81C1/00 ,  H01L21/768

CPC分类号： H01L23/481 ,  B81B2203/033 ,  B81B2207/095 ,  B81C1/00095 ,  H01L21/76837 ,  H01L23/04 ,  H01L2224/48463 ,  H01L2924/1461 ,  H01L2924/00

摘要： An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

摘要翻译： 一种有利的方法和系统，用于实现电气非常可靠和机械上非常稳定的通孔，用于在导电基底上的层结构中实现其功能的部件。 被引导到部件的背面并用于在层结构中实现的功能元件的电接触的通孔（垂直互连访问）包括在基板中的连接区域，该连接区域在整个厚度 并且通过类似于整个基板厚度延伸的沟槽状绝缘框架与邻接的基板电绝缘。 根据本系统，沟槽状绝缘框架填充有电绝缘聚合物。

公开(公告)号：US20130147020A1

公开(公告)日：2013-06-13

申请号：US13701277

申请日：2011-04-13

申请人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Julian Gonska ,  Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  B81B2203/033 ,  B81B2207/095 ,  B81C1/00095 ,  H01L21/76837 ,  H01L23/04 ,  H01L2224/48463 ,  H01L2924/1461 ,  H01L2924/00

摘要： An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

摘要翻译： 一种有利的方法和系统，用于实现电气非常可靠和机械上非常稳定的通孔，用于在导电基底上的层结构中实现其功能的部件。 被引导到部件的背面并用于在层结构中实现的功能元件的电接触的通孔（垂直互连访问）包括在基板中的连接区域，该连接区域在整个厚度 并且通过类似于整个基板厚度延伸的沟槽状绝缘框架与邻接的基板电绝缘。 根据本系统，沟槽状绝缘框架填充有电绝缘聚合物。

公开(公告)号：US20120038030A1

公开(公告)日：2012-02-16

申请号：US13198651

申请日：2011-08-04

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L29/41 ,  H01L21/762 ,  H01L29/06

CPC分类号： H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

摘要翻译： 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US08647961B2

公开(公告)日：2014-02-11

申请号：US13198651

申请日：2011-08-04

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L21/76

CPC分类号： H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

摘要翻译： 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

申请人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US20140117472A1

公开(公告)日：2014-05-01

申请号：US14061887

申请日：2013-10-24

申请人： Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

发明人： Julian Gonska ,  Jochen Reinmuth ,  Kathrin Gutsche ,  Jens Frey ,  Heribert Weber

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81C1/00285 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035

摘要： A micromechanical component includes a first space in which a first sensor is situated and a second space in which a second sensor is situated, different pressures prevailing in the first and second spaces, one of the two spaces extending via a third space to a first lattice structure which is situated in an edge region of the component and is essentially hermetically sealed.

摘要翻译： 微机械部件包括第一传感器所在的第一空间和第二传感器所在的第二空间，在第一和第二空间中存在不同的压力，两个空间中的一个通过第三空间延伸到第一格子 结构位于组件的边缘区域中，并且基本上被气密地密封。

公开(公告)号：US20130161820A1

公开(公告)日：2013-06-27

申请号：US13719799

申请日：2012-12-19

申请人： Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian GONSKA ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/50 ,  H01L23/488

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US08748998B2

公开(公告)日：2014-06-10

申请号：US13206024

申请日：2011-08-09

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84

CPC分类号： G01P15/125 ,  B81B7/02 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81B2207/097 ,  B81C2203/0118 ,  B81C2203/035 ,  G01L9/0048 ,  G01L9/0052 ,  G01L9/0073 ,  G01L19/0076 ,  G01L19/0092 ,  G01P15/0802 ,  G01R33/0286

摘要： A sensor module includes a substrate system which has multiple substrates situated one on top of the other and connected in each case via a wafer bond connection. The substrate system includes at least one first sensor substrate and at least one second sensor substrate, the first sensor substrate having a first sensor structure and the second sensor substrate having a second sensor structure. The first and second sensor structures are designed for detecting different characteristics. At least the first sensor structure includes a micromechanical functional structure. Moreover, a method for manufacturing such a sensor module is disclosed.

摘要翻译： 传感器模块包括具有多个基板的基板系统，该基板一个在另一个之上并且通过晶片接合连接在每种情况下连接。 衬底系统包括至少一个第一传感器衬底和至少一个第二传感器衬底，第一传感器衬底具有第一传感器结构，第二传感器衬底具有第二传感器结构。 第一和第二传感器结构被设计用于检测不同的特性。 至少第一传感器结构包括微机械功能结构。 此外，公开了一种用于制造这种传感器模块的方法。

公开(公告)号：US09593011B2

公开(公告)日：2017-03-14

申请号：US13318435

申请日：2010-04-07

申请人： Julian Gonska ,  Heribert Weber

发明人： Julian Gonska ,  Heribert Weber

IPC分类号： B81B1/00 ,  B81C1/00 ,  B81B7/00

CPC分类号： B81C1/00269 ,  B81B7/0029 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  Y10T428/24802

摘要： A method is described for producing a micromechanical component. The method includes providing a first substrate, providing a second substrate, developing a projecting patterned element on the second substrate, and connecting the first and the second substrate via the projecting patterned element. The method provides that the connecting of the first and the second substrate includes eutectic bonding. Also described is a micromechanical component, in which a first and a second substrate are connected to each other.

摘要翻译： 描述了用于制造微机械部件的方法。 该方法包括提供第一衬底，提供第二衬底，在第二衬底上显影突出的图案化元件，以及经由突出图案化元件连接第一和第二衬底。 该方法提供了第一和第二基板的连接包括共晶接合。 还描述了一种微机械部件，其中第一和第二基板彼此连接。

公开(公告)号：US08530260B2

公开(公告)日：2013-09-10

申请号：US12798868

申请日：2010-04-12

申请人： Julian Gonska ,  Axel Grosse ,  Heribert Weber ,  Ralf Hausner

发明人： Julian Gonska ,  Axel Grosse ,  Heribert Weber ,  Ralf Hausner

IPC分类号： H01L29/84

CPC分类号： B81C3/001 ,  B81C2203/019

摘要： A method for attaching a first carrier device to a second carrier device includes forming at least one first bond layer and/or solder layer on a first exterior of the first carrier device, a partial surface being framed by the at least one first bond layer and/or solder layer, and placing the first carrier device on the second carrier device and fixedly bonding or soldering the first carrier device to the second carrier device. The at least one first bond layer and/or solder layer includes a first cover area which is larger than a first contact area.

摘要翻译： 用于将第一载体装置附接到第二载体装置的方法包括在第一载体装置的第一外部上形成至少一个第一接合层和/或焊料层，部分表面由至少一个第一接合层和 /或焊料层，并且将第一载体装置放置在第二载体装置上，并将第一载体装置固定地接合或焊接到第二载体装置。 所述至少一个第一接合层和/或焊料层包括大于第一接触区域的第一覆盖区域。