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    Semiconductor memory device and method for manufacturing the same
    1.
    发明授权
    Semiconductor memory device and method for manufacturing the same 有权
    半导体存储器件及其制造方法

    公开(公告)号：US08901635B2

    公开(公告)日：2014-12-02

    申请号：US13414988

    申请日：2012-03-08

    申请人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Tomoko Fujiwara

    发明人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Tomoko Fujiwara

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L29/66

    CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, an insulating film, and a charge storage film. The stacked body includes a plurality of electrode films stacked with an inter-layer insulating film provided between the electrode films. The semiconductor pillar pierces the stacked body. The insulating film is provided between the semiconductor pillar and the electrode films on an outer side of the semiconductor pillar with a gap interposed. The charge storage film is provided between the insulating film and the electrode films. The semiconductor pillar includes germanium. An upper end portion of the semiconductor pillar is supported by an interconnect provided above the stacked body.

    摘要翻译： 根据一个实施例，半导体存储器件包括堆叠体，半导体柱，绝缘膜和电荷存储膜。 层叠体包括层叠了设置在电极膜之间的层间绝缘膜的多个电极膜。 半导体柱穿透层叠体。 绝缘膜设置在半导体柱和位于半导体柱的外侧的电极膜之间，间隙插入。 电荷存储膜设置在绝缘膜和电极膜之间。 半导体柱包括锗。 半导体柱的上端部由设置在层叠体上方的配线支撑。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20130062681A1

    公开(公告)日：2013-03-14

    申请号：US13414988

    申请日：2012-03-08

    申请人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Tomoko Fujiwara

    发明人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Tomoko Fujiwara

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, an insulating film, and a charge storage film. The stacked body includes a plurality of electrode films stacked with an inter-layer insulating film provided between the electrode films. The semiconductor pillar pierces the stacked body. The insulating film is provided between the semiconductor pillar and the electrode films on an outer side of the semiconductor pillar with a gap interposed. The charge storage film is provided between the insulating film and the electrode films. The semiconductor pillar includes germanium. An upper end portion of the semiconductor pillar is supported by an interconnect provided above the stacked body.

    摘要翻译： 根据一个实施例，半导体存储器件包括堆叠体，半导体柱，绝缘膜和电荷存储膜。 层叠体包括层叠了设置在电极膜之间的层间绝缘膜的多个电极膜。 半导体柱穿透层叠体。 绝缘膜设置在半导体柱和位于半导体柱的外侧的电极膜之间，间隙插入。 电荷存储膜设置在绝缘膜和电极膜之间。 半导体柱包括锗。 半导体柱的上端部由设置在层叠体上方的配线支撑。

    Semiconductor memory device
    3.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08643081B2

    公开(公告)日：2014-02-04

    申请号：US13603797

    申请日：2012-09-05

    申请人： Tomoko Fujiwara ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    发明人： Tomoko Fujiwara ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

    摘要： According to one embodiment, a semiconductor memory device comprises a first layer, a first conductive layer, a insulating layer, and a second conductive layer stacked on a substrate, a block insulating layer on inner surfaces of a pair of through-holes formed in the first conductive layer, the insulating layer, and the second conductive layer, and on an inner surface of a connecting hole connecting lower ends of the pair of through-holes, a charge storage layer on the block insulating layer, a second layer on the charge storage layer, and a semiconductor layer on the second layer. The second layer includes an air gap layer on the charge storage layer in the pair of through-holes, and a third conductive layer on the charge storage layer in the connecting hole.

    摘要翻译： 根据一个实施例，半导体存储器件包括第一层，第一导电层，绝缘层和堆叠在衬底上的第二导电层，在形成在衬底中的一对通孔的内表面上的块绝缘层 第一导电层，绝缘层和第二导电层，以及连接在一对通孔的下端的连接孔的内表面上，在块绝缘层上的电荷存储层，电荷上的第二层 存储层和第二层上的半导体层。 第二层包括一对通孔中的电荷存储层上的气隙层和连接孔中的电荷存储层上的第三导电层。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    5.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08598643B2

    公开(公告)日：2013-12-03

    申请号：US13235425

    申请日：2011-09-18

    申请人： Kaori Kawasaki ,  Yoshiaki Fukuzumi ,  Masaru Kito ,  Tomoko Fujiwara ,  Takeshi Imamura ,  Ryouhei Kirisawa ,  Hideaki Aochi

    发明人： Kaori Kawasaki ,  Yoshiaki Fukuzumi ,  Masaru Kito ,  Tomoko Fujiwara ,  Takeshi Imamura ,  Ryouhei Kirisawa ,  Hideaki Aochi

    IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/7926

    摘要： According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一导电层，第二导电层，第一电极间绝缘膜和堆叠在第一导电层上方的第三导电层，存储膜，半导体层， 绝缘构件和硅化物层。 存储膜和半导体层形成在设置在第二导电层，第一电极间绝缘膜和第三导电层中的通孔的内表面上。 绝缘构件埋设在分割第二导电层，第一电极间绝缘膜和第三导电层的狭缝中。 硅化物层形成在狭缝中的第二导电层和第三导电层的表面上。 沿着狭缝的内表面，第二导电层和第三导电层之间的距离比层叠方向长。

    METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    用于制造非易失性半导体存储器件和非易失性半导体存储器件的方法

    公开(公告)号：US20100224928A1

    公开(公告)日：2010-09-09

    申请号：US12714905

    申请日：2010-03-01

    申请人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kito ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yosuke Komori ,  Megumi Ishiduki ,  Junya Matsunami ,  Tomoko Fujiwara ,  Hideaki Aochi ,  Ryouhei Kirisawa

    发明人： Yoshiaki FUKUZUMI ,  Ryota Katsumata ,  Masaru Kito ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Yosuke Komori ,  Megumi Ishiduki ,  Junya Matsunami ,  Tomoko Fujiwara ,  Hideaki Aochi ,  Ryouhei Kirisawa

    IPC分类号： H01L29/792 ,  H01L21/8239

    CPC分类号： H01L27/11578 ,  H01L21/28282 ,  H01L27/11582

    摘要： A method for manufacturing a nonvolatile semiconductor memory device, the device including a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction and a semiconductor pillar piercing the stacked structural unit in the first direction, the method includes: forming a stacked unit including a core material film alternately stacked with a sacrificial film on a major surface of a substrate perpendicular to the first direction; making a trench in the stacked unit, the trench extending in the first direction and a second direction in a plane perpendicular to the first direction; filling a filling material into the trench; removing the sacrificial film to form a hollow structural unit, the hollow structural unit including a post unit supporting the core material film on the substrate, the post unit being made of the filling material; and forming the stacked structural unit by stacking one of the insulating films and one of the electrode films on a surface of the core material film exposed by removing the sacrificial film.

    摘要翻译： 一种用于制造非易失性半导体存储器件的方法，该器件包括层叠结构单元，该堆叠结构单元包括在第一方向上交替堆叠多个电极膜的多个绝缘膜，以及沿第一方向穿透层叠结构单元的半导体柱， 方法包括：在垂直于第一方向的基板的主表面上形成包括交替堆叠有牺牲膜的芯材膜的堆叠单元; 在所述堆叠单元中形成沟槽，所述沟槽在垂直于所述第一方向的平面中沿所述第一方向延伸并且沿第二方向延伸; 将填充材料填充到沟槽中; 去除所述牺牲膜以形成中空结构单元，所述中空结构单元包括支撑所述芯材膜的柱单元，所述柱单元由所述填充材料制成; 以及通过将绝缘膜和其中一个电极膜层叠在通过去除牺牲膜而暴露的芯材膜的表面上来形成层叠结构单元。