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公开(公告)号：US07687228B2
公开(公告)日：2010-03-30
申请号：US12071804
申请日：2008-02-26
IPC分类号： G03F7/11 , H01L21/027 , G03F7/40 , C08F20/24
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (I).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（I）表示的重复单元的聚合物。
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公开(公告)号：US20080220381A1
公开(公告)日：2008-09-11
申请号：US12071804
申请日：2008-02-26
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided.The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（1）表示的重复单元的聚合物。
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公开(公告)号：US08288072B2
公开(公告)日：2012-10-16
申请号：US12071806
申请日：2008-02-26
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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4.发明申请公开(公告)号：US20080227037A1
公开(公告)日：2008-09-18
申请号：US12071806
申请日：2008-02-26
CPC分类号： G03F7/091 , G03F7/0046
摘要： A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).
摘要翻译： 一种抗蚀剂下层膜组合物，其中蚀刻速度快，因此可以缩短蚀刻时间周期，以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形，因此，图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式（1）表示的重复单元的聚合物。
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5.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US07879530B2
公开(公告)日：2011-02-01
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α-和α'-位取代的具有多个氟原子并具有k = 0.01-0.4的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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6.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20090087799A1
公开(公告)日：2009-04-02
申请号：US12239641
申请日：2008-09-26
CPC分类号： G03F7/091 , C08L33/16 , C09D125/18 , C09D133/16 , Y10S438/952 , C08L2666/04 , C08L2666/02
摘要： A composition comprising (A) a polymer having an alcohol structure with plural fluorine atoms substituted at α- and α′-positions and having k=0.01-0.4 and (B) an aromatic ring-containing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 一种组合物，其包含（A）具有在α和α'位置被取代并具有k = 0.01-0.4的多个氟原子的醇结构的聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物 以形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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7.发明授权Antireflective coating composition, antireflective coating, and patterning process 有权抗反射涂料组合物，抗反射涂层和图案化工艺公开(公告)号：US08313890B2
公开(公告)日：2012-11-20
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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8.发明申请ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS 有权抗反射涂层组合物，抗反射涂层和图案处理公开(公告)号：US20100151381A1
公开(公告)日：2010-06-17
申请号：US12636546
申请日：2009-12-11
CPC分类号： G03F7/091 , C09D133/16 , C08L2666/02
摘要： A composition comprising (A) a fluorinated polymer having k=0.01-0.4 and n=1.4-2.1 and (B) an aromatic ring-bearing polymer having k=0.3-1.2 is used to form an antireflective coating. The ARC-forming composition can be deposited by the same process as prior art ARCs. The resulting ARC is effective in preventing reflection of exposure light in photolithography and has an acceptable dry etching rate.
摘要翻译： 包含（A）具有k = 0.01-0.4和n = 1.4-2.1的氟化聚合物和（B）具有k = 0.3-1.2的含芳环的聚合物的组合物用于形成抗反射涂层。 ARC形成组合物可以通过与现有技术ARC相同的方法沉积。 所得到的ARC有效地防止曝光光在光刻中的反射并且具有可接受的干蚀刻速率。
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公开(公告)号：US09069245B2
公开(公告)日：2015-06-30
申请号：US13091287
申请日：2011-04-21
申请人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译： 包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。 式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。
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10.发明申请NEAR-INFRARED ABSORBING DYE, NEAR-INFRARED ABSORPTIVE FILM-FORMING COMPOSITION, AND NEAR-INFRARED ABSORPTIVE FILM 有权近红外吸收染料，近红外吸收成膜组合物和近红外吸收膜公开(公告)号：US20120119171A1
公开(公告)日：2012-05-17
申请号：US13108534
申请日：2011-05-16
IPC分类号： F21V9/04 , C07D403/06 , C07D403/08
CPC分类号： C07D403/06 , C07D209/08 , C07D209/90 , C07D403/08 , C09B23/0008 , C09B23/0016 , C09B23/0025 , C09B23/0033 , C09B23/0041 , C09B23/086 , G02B5/223
摘要： A near-infrared absorbing dye has an anion of formula (1) wherein A1 is H or CF3, R0 is OH or —OC(═O)—R′, and R′ is a monovalent hydrocarbon group. The dye has excellent solvent solubility as well as good optical properties and heat resistance, offering the advantages of easy coating and effective working during film formation. The dye free of heavy metal in its structure is advantageously used in the process of fabricating semiconductor devices.
摘要翻译： 近红外吸收染料具有式（1）的阴离子，其中A1是H或CF3，R0是OH或-OC（= O）-R'，R'是一价烃基。 该染料具有优异的溶剂溶解性以及良好的光学性能和耐热性，提供了容易涂布和成膜期间有效加工的优点。 在其结构中不含重金属的染料有利地用于制造半导体器件的工艺中。
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