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    Polymers, positive resist compositions and patterning process
    3.
    发明申请
    Polymers, positive resist compositions and patterning process 有权
    聚合物，正性抗蚀剂组合物和图案化工艺

    公开(公告)号：US20070207408A1

    公开(公告)日：2007-09-06

    申请号：US11713763

    申请日：2007-03-05

    申请人： Jun Hatakeyama ,  Takeshi Kinsho ,  Takanobu Takeda

    发明人： Jun Hatakeyama ,  Takeshi Kinsho ,  Takanobu Takeda

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  C08F222/20 ,  C08F224/00 ,  C08F232/00 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/111

    摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.

    摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。

    Polymers, positive resist compositions and patterning process
    4.
    发明授权
    Polymers, positive resist compositions and patterning process 有权
    聚合物，正性抗蚀剂组合物和图案化工艺

    公开(公告)号：US07491483B2

    公开(公告)日：2009-02-17

    申请号：US11713763

    申请日：2007-03-05

    申请人： Jun Hatakeyama ,  Takeshi Kinsho ,  Takanobu Takeda

    发明人： Jun Hatakeyama ,  Takeshi Kinsho ,  Takanobu Takeda

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C08F222/20 ,  C08F224/00 ,  C08F232/00 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/111

    摘要： A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.

    摘要翻译： 聚合物由羟基乙烯基萘的重复单元，具有与桥环稠合的内酯环的（甲基）丙烯酸单元和具有酸不稳定基的（甲基）丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。

    Resist-modifying composition and pattern forming process
    6.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号：US08329384B2

    公开(公告)日：2012-12-11

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环和醇类溶剂。

    PATTERNING PROCESS
    8.
    发明申请
    PATTERNING PROCESS 审中-公开
    绘图过程

    公开(公告)号：US20100086878A1

    公开(公告)日：2010-04-08

    申请号：US12575097

    申请日：2009-10-07

    申请人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    IPC分类号： G03F7/20

    CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338

    摘要： A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half.

    摘要翻译： 通过将第一正性抗蚀剂材料施加到基底上，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第一抗蚀剂图案，形成图案; 将包含具有氨基的可水解硅化合物的保护涂层溶液施加到第一抗蚀剂图案和基底上，加热形成保护涂层; 并在其上施加第二正性抗蚀剂材料，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第二抗蚀剂图案。 通过在第一图案的空间部分中形成第二图案，该双重图案将图案间距减小到一半。