公开(公告)号：US5558717A

公开(公告)日：1996-09-24

申请号：US348273

申请日：1994-11-30

申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。