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公开(公告)号：US20100104115A1
公开(公告)日：2010-04-29
申请号：US12361905
申请日：2009-01-29
申请人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
发明人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
CPC分类号： H04R1/00
摘要： A micro magnetic device with a micro magnetic speaker unit having a first element, a second element, and a membrane therebetween. Each of the elements comprises a body, a pole of soft magnetic material, an electrically conductive coil positioned around the pole, and a permanent magnet connected to the membrane. The first element and the second element are magnetically identical. A plurality of speaker units can be combined to provide a speaker array.
摘要翻译： 具有微型磁性扬声器单元的微型磁性装置具有第一元件，第二元件和它们之间的隔膜。 每个元件包括主体，软磁材料的极，围绕极的定位的导电线圈和连接到膜的永磁体。 第一元件和第二元件是磁性相同的。 可以组合多个扬声器单元以提供扬声器阵列。
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公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译： 旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。 在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。 该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。 该连接允许将旋转波从第一磁条传输到第二磁条。 第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。
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公开(公告)号：US20100219156A1
公开(公告)日：2010-09-02
申请号：US12396074
申请日：2009-03-02
申请人： Roger Lee Hipwell, JR. , Nurul Amin , Jun Zheng , Ming Sun , Haiwen Xi
发明人： Roger Lee Hipwell, JR. , Nurul Amin , Jun Zheng , Ming Sun , Haiwen Xi
CPC分类号： H01F1/06 , B81C1/00031 , B81C3/005 , B81C2203/057
摘要： Micro structures and methods for creating complex, 3-dimensional magnetic micro components and their application for batch-level microassembly. Included is a method for making complex, 3-dimensional magnetic structures by depositing a first photoimageable magnet/polymer material on a substrate and patterning to form at least one first active magnetic area and at least one first sacrificial area, then depositing a second photoimageable magnet/polymer material and patterning to form at least one second active magnetic area and at least one second sacrificial area, and then removing the first sacrificial area and the second sacrificial area. Also included is a micro structure self assembly method, the method including providing a substrate having at least one magnetic receptor site, and engaging a 3-dimensional magnetic micro structure having a magnetic micro component with the substrate by aligning the magnetic micro component with the magnetic receptor site.
摘要翻译： 用于制造复杂的三维磁性微型组件的微观结构和方法及其在批量级微组装中的应用。 包括的方法是通过将第一可光成像磁体/聚合物材料沉积在衬底上并图案化以形成至少一个第一有效磁性区域和至少一个第一牺牲区域来制造复杂的三维磁性结构，然后沉积第二可光成像磁体 /聚合物材料并且被图案化以形成至少一个第二有效磁性区域和至少一个第二牺牲区域，然后去除第一牺牲区域和第二牺牲区域。 还包括微结构自组装方法，该方法包括提供具有至少一个磁性受体部位的衬底，并通过将磁性微成分与磁性体对准而将具有磁性微成分的3维磁性微结构与衬底接合 受体位点。
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公开(公告)号：US07966581B2
公开(公告)日：2011-06-21
申请号：US12252564
申请日：2008-10-16
申请人： Yiran Chen , Dadi Setiadi , Hai Li , Haiwen Xi , Hongyue Liu
发明人： Yiran Chen , Dadi Setiadi , Hai Li , Haiwen Xi , Hongyue Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F2217/14
摘要： Method and apparatus for constructing and operating an integrated circuit in an electronic device. In some embodiments, a generic service layer is integrated in a three dimensional integrated circuit and tested using a testing pattern stored in a non-volatile memory. The generic service layer is reconfigured to a permanent non-testing functional component of the integrated circuit.
摘要翻译： 在电子设备中构建和操作集成电路的方法和装置。 在一些实施例中，通用服务层集成在三维集成电路中，并使用存储在非易失性存储器中的测试模式进行测试。 通用服务层被重新配置为集成电路的永久性非测试功能组件。
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公开(公告)号：US20100100857A1
公开(公告)日：2010-04-22
申请号：US12252564
申请日：2008-10-16
申请人： Yiran Chen , Dadi Setiadi , Hai Li , Haiwen Xi , Hongyue Liu
发明人： Yiran Chen , Dadi Setiadi , Hai Li , Haiwen Xi , Hongyue Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G06F2217/14
摘要： Method and apparatus for constructing and operating an integrated circuit in an electronic device. In some embodiments, a generic service layer is integrated in a three dimensional integrated circuit and tested using a testing pattern stored in a non-volatile memory. The generic service layer is reconfigured to a permanent non-testing functional component of the integrated circuit.
摘要翻译： 在电子设备中构建和操作集成电路的方法和装置。 在一些实施例中，通用服务层集成在三维集成电路中，并使用存储在非易失性存储器中的测试模式进行测试。 通用服务层被重新配置为集成电路的永久性非测试功能组件。
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公开(公告)号：US20120127786A1
公开(公告)日：2012-05-24
申请号：US12953205
申请日：2010-11-23
申请人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
发明人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/222 , Y10S977/935
摘要： An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.
摘要翻译： 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。
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公开(公告)号：US08203870B2
公开(公告)日：2012-06-19
申请号：US12953205
申请日：2010-11-23
申请人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
发明人： Nurul Amin , Dimitar V. Dimitrov , Haiwen Xi , Song S. Xue
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/222 , Y10S977/935
摘要： An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.
摘要翻译： 一种用于非易失性存储单元（诸如多位磁随机存取存储单元）的装置和相关方法。 根据各种实施例，第一磁性隧道结（MTJ）与具有磁性过滤器的第二MTJ相邻。 第一MTJ被编程为具有第一磁通量的第一逻辑状态，同时磁性滤波器吸收第一磁通量以防止第二MTJ被编程。
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公开(公告)号：US20100102289A1
公开(公告)日：2010-04-29
申请号：US12606681
申请日：2009-10-27
申请人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
发明人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.
摘要翻译： 公开了非易失性电阻性存储器件。 在一些实施例中，存储器件包括包括电极，一个或多个电阻存储层和分离层的多层结构。 分离层使电阻存储层绝缘，以防止来自存储层的电荷泄漏并允许使用薄的电阻存储层。 在一些实施例中，非易失性电阻性存储器件包括金属层，其包括围绕中间层的两个金属层。 在中间层和金属层的界面处的掺杂剂可在多层内提供可切换的电场。
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公开(公告)号：US08400825B2
公开(公告)日：2013-03-19
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。
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公开(公告)号：US20120250405A1
公开(公告)日：2012-10-04
申请号：US13491891
申请日：2012-06-08
申请人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
发明人： Xiaobin Wang , Haiwen Xi , Hongyue Liu , Insik Jin , Andreas Roelofs , Eileen Yan , Dimitar V. Dimitrov
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.
摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。
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