公开(公告)号：US08003992B2

公开(公告)日：2011-08-23

申请号：US12457138

申请日：2009-06-02

申请人： Jun-youn Kim ,  Taek Kim ,  Kyoung-kook Kim

发明人： Jun-youn Kim ,  Taek Kim ,  Kyoung-kook Kim

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/227 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/075 ,  H01L31/109

CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/46 ,  Y10S977/701 ,  Y10S977/762 ,  Y10S977/949

摘要： Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

摘要翻译： 示例性实施例提供了具有改进的偏振特性的发光二极管（LED）。 LED可以包括在发光单元上和下方的线栅偏振器。 线栅偏振器可以彼此成一定角度布置。 因此，由于LED可以在给定的偏振方向上发射光束，所以不需要昂贵的部件，例如双亮度增强膜（DBEF）。 因此，可以减少包括LED的背光单元和包括背光单元的显示装置的制造成本。

公开(公告)号：US08003419B2

公开(公告)日：2011-08-23

申请号：US12458900

申请日：2009-07-27

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

公开(公告)号：US20100127238A1

公开(公告)日：2010-05-27

申请号：US12457138

申请日：2009-06-02

申请人： Jun-youn Kim ,  Taek Kim ,  Kyoung-kook Kim

发明人： Jun-youn Kim ,  Taek Kim ,  Kyoung-kook Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/46 ,  Y10S977/701 ,  Y10S977/762 ,  Y10S977/949

摘要： Example embodiments provide a light emitting diode (LED) having improved polarization characteristics. The LED may include wire grid polarizers on and below a light emitting unit. The wire grid polarizers may be arranged at an angle to each other. Thus, because the LED may emit a light beam in a given polarization direction, an expensive component, e.g., a dual brightness enhanced film (DBEF), is not required. Thus, manufacturing costs of a backlight unit including the LED and a display apparatus including the backlight unit may be reduced.

摘要翻译： 示例性实施例提供了具有改进的偏振特性的发光二极管（LED）。 LED可以包括在发光单元上和下方的线栅偏振器。 线栅偏振器可以彼此成一定角度布置。 因此，由于LED可以在给定的偏振方向上发射光束，所以不需要昂贵的部件，例如双亮度增强膜（DBEF）。 因此，可以减少包括LED的背光单元和包括背光单元的显示装置的制造成本。

公开(公告)号：US08222663B2

公开(公告)日：2012-07-17

申请号：US12458797

申请日：2009-07-23

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/12

摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

公开(公告)号：US20100124798A1

公开(公告)日：2010-05-20

申请号：US12458900

申请日：2009-07-27

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-Seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L21/28

CPC分类号： H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.

摘要翻译： 提供了一种使用晶片接合方法从大面积接合晶片制造发光器件的方法。 该方法可以包括在多个生长衬底上形成多个半导体层，每个半导体层具有发射光的有源区。 该方法还可以包括在其上形成半导体层的多个生长衬底布置在一个接合衬底上，并且通过后续处理同时处理在每个生长衬底上形成的每个半导体层。 接合晶片可以由减少或防止由于晶片材料（例如蓝宝石）和接合晶片之间的热膨胀系数的差异而导致的弯曲或翘曲的材料形成。 根据上述方法，由于可以通过一个处理来处理多个晶片，因此大量生产LED可能会降低制造成本。

公开(公告)号：US20100123158A1

公开(公告)日：2010-05-20

申请号：US12458797

申请日：2009-07-23

申请人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

发明人： Kyoung-kook Kim ,  Su-hee Chae ,  Young-soo Park ,  Taek Kim ,  Moon-seung Yang ,  Hyung-su Jeong ,  Jae-chul Park ,  Jun-youn Kim

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L33/0079 ,  H01L33/12

摘要： Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

摘要翻译： 提供了通过使用晶片接合方法制造的发光二极管（LED）和通过使用晶片接合方法制造LED的方法。 晶片接合方法可以包括在半导体层和接合基板之间插入由金属形成的应力松弛层。 当使用应力松弛层时，由于金属的柔韧性，接合基板和生长基板之间的应力可能被抵消，因此可以减少或防止接合基板的弯曲或翘曲。

公开(公告)号：US08741706B2

公开(公告)日：2014-06-03

申请号：US13944444

申请日：2013-07-17

申请人： Jun-youn Kim ,  Jae-won Lee ,  Hyo-ji Choi

发明人： Jun-youn Kim ,  Jae-won Lee ,  Hyo-ji Choi

IPC分类号： H01L21/18 ,  H01L21/302 ,  H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/0649 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

摘要： A high electron mobility transistor (HEMT) includes a substrate, an HEMT stack spaced apart from the substrate, and a pseudo-insulation layer (PIL) disposed between the substrate and the HEMT stack. The PIL layer includes at least two materials having different phases. The PIL layer defines an empty space that is wider at an intermediate portion than at an entrance of the empty space.

摘要翻译： 高电子迁移率晶体管（HEMT）包括衬底，与衬底间隔开的HEMT堆叠以及设置在衬底和HEMT堆叠之间的伪绝缘层（PIL）。 PIL层包括具有不同相的至少两种材料。 PIL层定义了一个空间，它在中间部分比在空间的入口处更宽。

公开(公告)号：US08581276B2

公开(公告)日：2013-11-12

申请号：US12801268

申请日：2010-06-01

申请人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

发明人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L2933/0016

摘要： Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer.

摘要翻译： 示例性实施例涉及发光器件和制造发光器件的方法。 发光器件可以包括包括多个氮化物半导体层的n型覆盖层，设置在多个氮化物半导体层之间的至少一个中间层，形成有第一电极的通孔，p型覆盖层 ，以及n型覆盖层和p型覆盖层之间的有源层。

公开(公告)号：US20120007143A1

公开(公告)日：2012-01-12

申请号：US12983414

申请日：2011-01-03

申请人： Jun-youn Kim ,  Su-hee Chae ,  Hyun-gi Hong ,  Young-jo Tak

发明人： Jun-youn Kim ,  Su-hee Chae ,  Hyun-gi Hong ,  Young-jo Tak

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L21/02658 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/0079 ,  H01L33/12 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/32341

摘要： A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.

摘要翻译： 公开了一种基板结构及其制造方法。 基板结构可以包括在其一个表面上形成有多个突起的基板和根据预定图案形成并且在多个突起上彼此间隔开地形成的多个缓冲层。

公开(公告)号：US20110127489A1

公开(公告)日：2011-06-02

申请号：US12801268

申请日：2010-06-01

申请人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

发明人： Jae-won Lee ,  Su-hee Chae ,  Jun-youn Kim ,  Young-jo Tak

IPC分类号： H01L33/04 ,  H01L33/36

CPC分类号： H01L33/382 ,  H01L2933/0016

摘要： Example embodiments relate to a light emitting device and a method of fabricating the light emitting device. The light emitting device may include an n-type clad layer including a plurality of nitride semiconductor layers, at least one interlayer disposed between the plurality of nitride semiconductor layers, a via hole in which a first electrode is formed, a p-type clad layer, and an active layer between the n-type clad layer and the p-type clad layer.

摘要翻译： 示例性实施例涉及发光器件和制造发光器件的方法。 发光器件可以包括包括多个氮化物半导体层的n型覆盖层，设置在多个氮化物半导体层之间的至少一个中间层，形成有第一电极的通孔，p型覆盖层 ，以及n型覆盖层和p型覆盖层之间的有源层。