公开(公告)号：US09337381B2

公开(公告)日：2016-05-10

申请号：US14484456

申请日：2014-09-12

申请人： Jun-youn Kim ,  Young-jo Tak ,  Jae-kyun Kim ,  Joo-sung Kim ,  Young-soo Park ,  Su-hee Chae

发明人： Jun-youn Kim ,  Young-jo Tak ,  Jae-kyun Kim ,  Joo-sung Kim ,  Young-soo Park ,  Su-hee Chae

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  H01L33/32

CPC分类号： H01L33/0025 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

摘要： A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.

摘要翻译： 半导体缓冲结构包括硅衬底，形成在硅衬底上的成核层和形成在成核层上的缓冲层。 缓冲层包括由具有均匀组成比的氮化物半导体材料形成的第一层，由与第一层上的成核层相同的材料形成的第二层和由相同组成比的相同材料形成的第三层 作为第二层的第一层。

公开(公告)号：US09257599B2

公开(公告)日：2016-02-09

申请号：US14288824

申请日：2014-05-28

申请人： Jae-kyun Kim ,  Joo-sung Kim ,  Jun-youn Kim ,  Young-soo Park ,  Young-jo Tak

发明人： Jae-kyun Kim ,  Joo-sung Kim ,  Jun-youn Kim ,  Young-soo Park ,  Young-jo Tak

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/12

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32

摘要： According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.

摘要翻译： 根据示例性实施例，半导体发光器件包括第一半导体层，第一半导体层上的凹坑放大层，凹坑放大层上的有源层，空穴注入层和空穴注入层上的第二半导体层 。 第一半导体层掺杂有第一导电类型。 凹坑扩大层的上表面和活性层的侧表面限定了在位错上具有倾斜表面的凹坑。 凹坑是反锥形空间。 空穴注入层位于有源层的顶表面和凹坑的倾斜表面上。 第二半导体层掺杂与第一导电类型不同的第二导电类型。

公开(公告)号：US09136430B2

公开(公告)日：2015-09-15

申请号：US13963476

申请日：2013-08-09

申请人： Young-jo Tak ,  Jae-kyun Kim ,  Joo-sung Kim ,  Jun-youn Kim ,  Jae-won Lee ,  Hyo-ji Choi

发明人： Young-jo Tak ,  Jae-kyun Kim ,  Joo-sung Kim ,  Jun-youn Kim ,  Jae-won Lee ,  Hyo-ji Choi

IPC分类号： H01L33/12 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L33/0066 ,  H01L33/0079

摘要： A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlxInyGa1-x-yN (0≦x

摘要翻译： 制造半导体器件的方法包括形成硅衬底，在硅衬底上形成缓冲层，并在缓冲层上形成氮化物半导体层。 缓冲层包括第一层，第二层和第三层。 第一层包括Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆ 第二层形成在第一层上，包括Al x In y Ga 1-x-y N（0＆nlE; x <1,0＆lt; nlE; y <1,0

公开(公告)号：US20090146142A1

公开(公告)日：2009-06-11

申请号：US12076608

申请日：2008-03-20

申请人： Kyoung-kook Kim ,  Joo-sung Kim ,  Young-soo Park

发明人： Kyoung-kook Kim ,  Joo-sung Kim ,  Young-soo Park

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L33/34

摘要： Provided are a light-emitting device including a plurality of nanorods each of which comprises an active layer formed between an n-type region and a p-type region, and a method of manufacturing the same. The light-emitting device comprises: a substrate; a first electrode layer formed on the substrate; a basal layer formed on the first electrode layer; a plurality of nanorods formed vertically on the basal layer, each of which comprises a bottom part doped with first type, a top part doped with second type opposite to the first type, and an active layer between the bottom part and the top part, an insulating region formed between the nanorods, and a second electrode layer formed on the nanorods and the insulating region.

摘要翻译： 提供了包括多个纳米棒的发光器件及其制造方法，每个纳米棒包括形成在n型区域和p型区域之间的有源层。 发光装置包括：基板; 形成在所述基板上的第一电极层; 形成在所述第一电极层上的基底层; 在基底层上垂直形成的多个纳米棒，每个纳米棒包括掺杂有第一类型的底部部分，掺杂有与第一类型相反的第二类型的顶部部分，以及在底部部分和顶部部分之间的有源层， 形成在纳米棒之间的绝缘区域和形成在纳米棒和绝缘区域上的第二电极层。

公开(公告)号：US20070145386A1

公开(公告)日：2007-06-28

申请号：US11705736

申请日：2007-02-14

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek ,  Hyun-soo Kim ,  Joo-sung Kim ,  Suk-ho Yoon

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/22

摘要： Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

摘要翻译： 提供了具有纳米图案的半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括：包含多个纳米图案的半导体层，其中所述多个纳米图案形成在所述半导体层的内部; 以及形成在半导体层上的有源层。 光输出效率增加，半导体发光器件的内部缺陷减小。

公开(公告)号：US20070187698A1

公开(公告)日：2007-08-16

申请号：US11525096

申请日：2006-09-22

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US20120153252A1

公开(公告)日：2012-06-21

申请号：US13156854

申请日：2011-06-09

申请人： Joo-sung Kim ,  Taek Kim

发明人： Joo-sung Kim ,  Taek Kim

IPC分类号： H01L33/06

CPC分类号： H01L33/24 ,  H01L33/08 ,  H01L33/18

摘要： A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0

摘要翻译： 纳米结构发光器件（LED）包括：第一类型半导体层上的多个纳米结构。 多个纳米结构中的每一个包括：在第一类型半导体层的一部分上的第一类型半导体纳米孔; 形成为覆盖第一类型半导体纳米孔的表面并由Al x Ga 1-x N（0

公开(公告)号：US20070202624A1

公开(公告)日：2007-08-30

申请号：US11649237

申请日：2007-01-04

申请人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

发明人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

摘要： A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

摘要翻译： 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层，有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。

公开(公告)号：US08835902B2

公开(公告)日：2014-09-16

申请号：US13156854

申请日：2011-06-09

申请人： Joo-sung Kim ,  Taek Kim

发明人： Joo-sung Kim ,  Taek Kim

IPC分类号： H01L33/06 ,  H01L33/24 ,  H01L33/18 ,  H01L33/08

CPC分类号： H01L33/24 ,  H01L33/08 ,  H01L33/18

摘要： A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0

摘要翻译： 纳米结构发光器件（LED）包括：第一类型半导体层上的多个纳米结构。 多个纳米结构中的每一个包括：在第一类型半导体层的一部分上的第一类型半导体纳米孔; 形成为覆盖第一类型半导体纳米孔的表面并由Al x Ga 1-x N（0

公开(公告)号：US08183068B2

公开(公告)日：2012-05-22

申请号：US12721063

申请日：2010-03-10

申请人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

发明人： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

摘要： A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

摘要翻译： 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。