公开(公告)号：US09202827B2

公开(公告)日：2015-12-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US08748223B2

公开(公告)日：2014-06-10

申请号：US12888846

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US09196738B2

公开(公告)日：2015-11-24

申请号：US12965197

申请日：2010-12-10

申请人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/124 ,  H01L29/24

摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

摘要翻译： 已经理解了硅半导体的许多物理性质，而氧化物半导体的许多物理性质仍然不清楚。 特别是杂质对氧化物半导体的不利影响还不清楚。 鉴于上述，公开了防止或消除影响包括氧化物半导体层的半导体器件的电特性的杂质的结构。 设置在栅电极和氧化物半导体层之间并且氧化物半导体层中的氮浓度为1×1020原子/ cm3以下的栅极，氧化物半导体层和栅极绝缘层的半导体装置为 提供。

公开(公告)号：US09171938B2

公开(公告)日：2015-10-27

申请号：US12888835

申请日：2010-09-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

公开(公告)号：US08378393B2

公开(公告)日：2013-02-19

申请号：US12609032

申请日：2009-10-30

申请人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L29/78

CPC分类号： C23C14/5846 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C14/0057 ,  C23C14/0676 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

摘要翻译： 使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。 在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。 本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。 发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

公开(公告)号：US08338827B2

公开(公告)日：2012-12-25

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L29/10

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US09224968B2

公开(公告)日：2015-12-29

申请号：US13552899

申请日：2012-07-19

申请人： Yuji Iwaki ,  Junichiro Sakata ,  Hisao Ikeda ,  Tomoya Aoyama ,  Takaaki Nagata ,  Takahiro Kawakami ,  Satoshi Seo ,  Ryoji Nomura

发明人： Yuji Iwaki ,  Junichiro Sakata ,  Hisao Ikeda ,  Tomoya Aoyama ,  Takaaki Nagata ,  Takahiro Kawakami ,  Satoshi Seo ,  Ryoji Nomura

IPC分类号： H01L51/50 ,  H01L51/00

CPC分类号： H01L51/5048 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0072 ,  H01L51/0081

摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.

摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

公开(公告)号：US09196858B2

公开(公告)日：2015-11-24

申请号：US13620903

申请日：2012-09-15

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： H01L21/443 ,  H01L51/50 ,  H01L51/56

CPC分类号： H01L51/5088 ,  H01L51/5092 ,  H01L51/56

摘要： An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.

摘要翻译： 本发明的目的是提高具有包含有机化合物和金属氧化物的混合层的发光装置的可靠性，而不降低生产率。 上述目的被解决为在形成包含有机化合物和金属氧化物的混合层之后，将混合层暴露于氮气气氛中而不暴露于包括氧的气体气氛，然后形成层叠膜 在混合层之上，而不将混合层暴露于包括氧的气体气氛中。

公开(公告)号：US09136389B2

公开(公告)日：2015-09-15

申请号：US12581200

申请日：2009-10-19

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/45 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

公开(公告)号：US08946700B2

公开(公告)日：2015-02-03

申请号：US13552805

申请日：2012-07-19

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

摘要翻译： 本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。 一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏极上形成与所述氧化物半导体膜接触的绝缘膜。