利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

22 条记录 (耗时 0.04 秒)

    Polymer crystalline materials
    5.
    发明授权
    Polymer crystalline materials 有权
    聚合物结晶材料

    公开(公告)号：US08735523B2

    公开(公告)日：2014-05-27

    申请号：US12449848

    申请日：2008-02-27

    申请人： Masamichi Hikosaka ,  Kaori Watanabe ,  Kiyoka Okada

    发明人： Masamichi Hikosaka ,  Kaori Watanabe ,  Kiyoka Okada

    IPC分类号： C08F110/06 ,  B29C55/18 ,  B29C55/00 ,  B29C43/02

    CPC分类号： C08F10/06 ,  C08F110/06 ,  C08J5/00 ,  C08J2323/00 ,  Y10T428/2982 ,  C08F2500/15 ,  C08F2500/11 ,  C08F2500/04 ,  C08F2500/26

    摘要： One embodiment of the present invention provides polymer crystalline materials containing crystals of the polymer and satisfying the following requirements (I) and (II) or the following requirements (I) and (III): (I) the polymer crystalline materials a crystallinity of 70% or greater; (II) the crystals are 300 nm or less in size; and (III) the crystals have a number density of 40 μm−3 or greater. This allows an embodiment of the present invention to provide polymer crystalline materials which are excellent in properties such as mechanical strength, heat tolerance, and transparency or, in particular, polymer crystalline materials, based on a general-purpose plastic such as PP, which is excellent in properties such as mechanical strength, heat tolerance, and transparency.

    摘要翻译： 本发明的一个实施方案提供含聚合物晶体并满足以下要求（I）和（II）或以下要求（I）和（III））的聚合物结晶材料：（I）聚合物结晶材料的结晶度为70 ％以上; （II）晶体尺寸为300nm以下。 和（III）晶体的数密度为40μm-3以上。 这允许本发明的一个实施方案提供基于诸如PP的通用塑料，其特性如机械强度，耐热性和透明度特别优选聚合物结晶材料，特别是聚合物结晶材料，其为 性能如机械强度，耐热性和透明度优异。

    POLYMER CRYSTALLINE MATERIALS
    6.
    发明申请
    POLYMER CRYSTALLINE MATERIALS 有权
    聚合物结晶材料

    公开(公告)号：US20100063235A1

    公开(公告)日：2010-03-11

    申请号：US12449848

    申请日：2008-02-27

    申请人： Masamichi Hikosaka ,  Kaori Watanabe ,  Kiyoka Okada

    发明人： Masamichi Hikosaka ,  Kaori Watanabe ,  Kiyoka Okada

    IPC分类号： C08F110/06 ,  B32B5/16

    CPC分类号： C08F10/06 ,  C08F110/06 ,  C08J5/00 ,  C08J2323/00 ,  Y10T428/2982 ,  C08F2500/15 ,  C08F2500/11 ,  C08F2500/04 ,  C08F2500/26

    摘要： One embodiment of the present invention provides polymer crystalline materials containing crystals of the polymer and satisfying the following requirements (I) and (II) or the following requirements (I) and (III): (I) the polymer crystalline materials a crystallinity of 70% or greater; (II) the crystals are 300 nm or less in size; and (III) the crystals have a number density of 40 μm−3 or greater. This allows an embodiment of the present invention to provide polymer crystalline materials which are excellent in properties such as mechanical strength, heat tolerance, and transparency or, in particular, polymer crystalline materials, based on a general-purpose plastic such as PP, which is excellent in properties such as mechanical strength, heat tolerance, and transparency.

    摘要翻译： 本发明的一个实施方案提供含聚合物晶体并满足以下要求（I）和（II）或以下要求（I）和（III））的聚合物结晶材料：（I）聚合物结晶材料的结晶度为70 ％以上; （II）晶体尺寸为300nm以下。 和（III）晶体的数密度为40μm-3以上。 这允许本发明的一个实施方案提供基于诸如PP的通用塑料，其特性如机械强度，耐热性和透明度特别优选聚合物结晶材料，特别是聚合物结晶材料，其为 性能如机械强度，耐热性和透明度优异。

    Platinum group impurity recovery liquid and method for recovering platinum group impurity
    9.
    发明授权
    Platinum group impurity recovery liquid and method for recovering platinum group impurity 失效
    铂族杂质回收液及铂族杂质回收方法

    公开(公告)号：US06444010B1

    公开(公告)日：2002-09-03

    申请号：US09709288

    申请日：2000-11-13

    申请人： Kaori Watanabe

    发明人： Kaori Watanabe

    IPC分类号： C22B1100

    CPC分类号： C23F1/30 ,  C22B11/046 ,  H01L21/32134 ,  Y02P10/214

    摘要： A mixed aqueous solution containing HCl with a concentration of 10 to 25% by weight, H2O2 with a concentration of 2 to 5% by weight, and HF with a concentration of 0.01 to 2% by weight or a mixed aqueous solution containing H2SO4 with a concentration of 65 to 82% by weight, H2O2 with a concentration of 4 to 16% by weight, and HF with a concentration of 0.01 to 2% by weight is used as a platinum group impurity recovery liquid. The recovery liquid is dripped onto a silicon substrate surface or a film thereon so as to scan the entire surface of the substrate with the droplets. As a result, the platinum group impurity is dissolved into the recovery liquid, and the platinum group impurity is thus recovered.

    摘要翻译： 浓度为10〜25重量％的浓度为2〜5重量％的H 2 O 2，浓度为0.01〜2重量％的HF和含有H 2 SO 4的混合水溶液的混合水溶液， 浓度为65〜82重量％，浓度为4〜16重量％的H 2 O 2，浓度为0.01〜2重量％的HF用作铂族杂质回收液。 将回收液滴在硅衬底表面或其上的膜上，以便用液滴扫描衬底的整个表面。 结果，铂族杂质溶解在回收液中，从而回收铂族杂质。

    Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit
    10.
    发明授权
    Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit 有权
    使用夹持单元制造半导体器件或半导体晶片的方法

    公开(公告)号：US07566663B2

    公开(公告)日：2009-07-28

    申请号：US11641913

    申请日：2006-12-20

    申请人： Kaori Watanabe ,  Hiroyuki Itoh ,  Takatoshi Hattori

    发明人： Kaori Watanabe ,  Hiroyuki Itoh ,  Takatoshi Hattori

    IPC分类号： H01L21/302

    CPC分类号： H01L21/67051 ,  H01L21/67219

    摘要： A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge portion of a semiconductor wafer is polished while a back surface of the semiconductor wafer is chucked to a chucking unit of a first polishing unit. The polished semiconductor wafer is then dechucked from the chucking unit of the first polishing unit. Next, a gap is formed above the chucking unit of the second polishing unit, and the semiconductor wafer is disposed therein. Water is discharged from the chucking unit of the second polishing unit to clean the back surface of the semiconductor wafer W. Thereafter, the back surface of the semiconductor wafer is chucked to the chucking unit of the second polishing unit, and the semiconductor wafer is polished.

    摘要翻译： 提供使用夹持单元制造半导体器件或半导体晶片的方法，以去除粘附到半导体晶片的背面的浆料。 抛光半导体晶片的边缘部分，同时将半导体晶片的背面夹持到第一抛光单元的夹持单元。 然后将抛光的半导体晶片从第一抛光单元的夹持单元中拔出。 接下来，在第二研磨单元的夹持单元的上方形成间隙，并且在其中配置半导体晶片。 水从第二研磨单元的夹持单元排出，以清洁半导体晶片W的背面。然后，将半导体晶片的背面夹持到第二研磨单元的夹持单元，并且半导体晶片被抛光 。