摘要:
A partially tert-butoxylated poly(p-hydroxystyrene) is prepared by subjecting poly(p-tert-butoxystyrene) to reaction of eliminating some of the tert-butoxy groups in an organic solvent at a temperature of 30.degree.-100.degree. C. in the presence of an acid catalyst at a molar ratio of acid catalyst/t-BuO group of from 0.050 to 2.0. During the elimination reaction, a change of solubility of the resulting partially tert-butoxylated poly(p-hydroxystyrene) is determined to calculate a degree of elimination of tert-butoxy groups. The reaction is terminated when a desired degree of elimination is reached. Through a simple process, partially tert-butoxylated poly(p-hydroxystyrene) having a well controlled t-BuO content is produced in high yields.
摘要:
The invention provides a novel polymer comprising a recurring unit of formula (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition. ##STR1##
摘要:
The invention provides a novel polymer comprising a recurring unit of formula. (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition. ##STR1##
摘要:
The invention provides a novel polysiloxane compound, typically polyhydroxybenzylsilsesquioxane, having some hydroxyl groups replaced by acetal groups and optionally acid labile groups. The polysiloxane compound is useful as an alkali soluble polymer for positive resist material.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C—O—C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group ≡C—COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要:
A resist composition comprising a dendritic or hyperbranched polymer of a phenol derivative having a weight average molecular weight of 500-10,000,000 has an excellent resolution, reduced line edge roughness, and dry etching resistance and is useful as a chemical amplification type resist composition which may be either positive or negative working.
摘要:
A dendritic or hyperbranched polymer having a weight average molecular weight of 500-10,000,000 is prepared by polymerizing a hydroxystyrene derivative, adding a branching monomer midway in the polymerization step to introduce branch chains, and repeating the polymerizing and branching steps. The polymer is advantageously used as the base resin of resist material because the size of the polymer can be reduced while maintaining strength.