Ion beam irradiation device and method for suppressing ion beam divergence
    1.
    发明授权
    Ion beam irradiation device and method for suppressing ion beam divergence 有权
    离子束照射装置及离子束发散抑制方法

    公开(公告)号:US08461548B2

    公开(公告)日:2013-06-11

    申请号:US13377253

    申请日:2010-04-27

    IPC分类号: H01J3/26

    摘要: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.

    摘要翻译: 为了提高利用电子的效率,有效地抑制通过空间电荷效应扩散的离子束,同时通过有效地利用磁体附近的空间来消除对专用磁极结构的需要,提供离子源,准直 磁体和多个电子源,其中电子源被布置在形成在准直磁体的离子束上游侧或离子束下游侧的磁场梯度区域中,并且布置在通过离子束的区域的外侧, 电子的方向被引导以将电子提供给磁场梯度区域。

    Ion beam irradiating apparatus, and method of producing semiconductor device
    2.
    发明授权
    Ion beam irradiating apparatus, and method of producing semiconductor device 有权
    离子束照射装置及半导体装置的制造方法

    公开(公告)号:US07935944B2

    公开(公告)日:2011-05-03

    申请号:US12304241

    申请日:2007-06-12

    IPC分类号: G21G1/10

    摘要: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).

    摘要翻译: 离子束照射装置具有设置在离子束2的路径附近并发射电子的场致发射电子源10.场致发射电子源10沿着形成的入射角的方向 由电子源10发射的电子12和与离子束2的行进方向平行的方向在-15度的范围内。 至+45度 (离子束2的向内方向为+,向外方向为 - )。

    ION BEAM IRRADIATING APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
    3.
    发明申请
    ION BEAM IRRADIATING APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
    离子束辐射装置,以及生产半导体器件的方法

    公开(公告)号:US20090203199A1

    公开(公告)日:2009-08-13

    申请号:US12304241

    申请日:2007-06-12

    摘要: An ion beam irradiating apparatus has a field emission electron source 10 which is disposed in a vicinity of a path of the ion beam 2, and which emits electrons 12. The field emission electron source 10 is placed in a direction along which an incident angle formed by the electrons 12 emitted from the electron source 10 and a direction parallel to the traveling direction of the ion beam 2 is in the range from −15 deg. to +45 deg. (an inward direction of the ion beam 2 is +, and an outward direction is −).

    摘要翻译: 离子束照射装置具有设置在离子束2的路径附近并发射电子的场致发射电子源10.场致发射电子源10沿着形成的入射角的方向 由电子源10发射的电子12和与离子束2的行进方向平行的方向在-15度的范围内。 至+45度 (离子束2的向内方向为+,向外方向为 - )。

    ION BEAM IRRADIATION DEVICE AND METHOD FOR SUPPRESSING ION BEAM DIVERGENCE
    4.
    发明申请
    ION BEAM IRRADIATION DEVICE AND METHOD FOR SUPPRESSING ION BEAM DIVERGENCE 有权
    离子束辐射装置和抑制离子束分散的方法

    公开(公告)号:US20120085918A1

    公开(公告)日:2012-04-12

    申请号:US13377253

    申请日:2010-04-27

    IPC分类号: H01J3/26 H01J3/20

    摘要: To improve an efficiency of utilizing electrons and efficiently suppress an ion beam spread by a space charge effect while eliminating a need for a special magnetic pole structure by effectively using a space in the vicinity of a magnet, there are provided an ion source, a collimating magnet and a plurality of electron sources, wherein the electron sources are arranged in a magnetic field gradient region formed on an ion beam upstream side or ion beam downstream side of the collimating magnet and arranged outside a region passed by the ion beam, and an irradiation direction of the electrons is directed to supply the electrons to the magnetic field gradient region.

    摘要翻译: 为了提高利用电子的效率,有效地抑制通过空间电荷效应扩散的离子束,同时通过有效地利用磁体附近的空间来消除对特殊磁极结构的需要,提供离子源,准直 磁体和多个电子源,其中电子源被布置在形成在准直磁体的离子束上游侧或离子束下游侧的磁场梯度区域中,并且布置在通过离子束的区域的外侧, 电子的方向被引导以将电子提供给磁场梯度区域。

    Ion implanter provided with beam deflector and asymmetrical einzel lens
    5.
    发明授权
    Ion implanter provided with beam deflector and asymmetrical einzel lens 有权
    离子注入机提供光束偏转器和不对称的einzel透镜

    公开(公告)号:US08405052B2

    公开(公告)日:2013-03-26

    申请号:US12905525

    申请日:2010-10-15

    申请人: Dan Nicolaescu

    发明人: Dan Nicolaescu

    IPC分类号: H01J37/317 H01L21/265

    摘要: An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.

    摘要翻译: 离子注入机具有光束偏转器,其具有在az方向上彼此面对的一对磁极,设置在各个磁极上的绝缘构件,设置在绝缘构件上的至少一对电极,以跨越空间通过 离子束在z方向上通过的至少一个电源,以及被配置为向一对电极施加电压的至少一个电源。 光束偏转器被配置为通过磁场使离子束的整体形状偏转,以便基本上平行于x方向。 该对电极具有比y方向上的离子束尺寸长的尺寸,并且在离子束的中心轨道的行进方向上构成不对称的einzel透镜。

    Collimator magnet for ion implantation system
    7.
    发明授权
    Collimator magnet for ion implantation system 失效
    用于离子注入系统的准直器磁体

    公开(公告)号:US08164070B2

    公开(公告)日:2012-04-24

    申请号:US12328824

    申请日:2008-12-05

    申请人: Dan Nicolaescu

    发明人: Dan Nicolaescu

    IPC分类号: H01J3/14

    摘要: A collimator magnet (CM) usable in an ion implantation system provides an exit ion beam with a large aperture, substantially parallel in one plane or orthogonal planes. The CM includes identical poles, defined by an incident edge receiving an ion beam, and an exit edge outputting the ion beam for implantation. Ion beam deflection takes place due to magnetic forces inside the CM and magnetic field fringe effects outside the CM. The CM incident and/or exit edge is shaped by solving a differential equation to compensate for magnetic field fringe effects and optionally, space charge effects and ion beam initial non-parallelism. The CM shape is obtained by imposing that the incidence or exit angle is substantially constant, or, incidence and exit angles have opposite sign but equal absolute values for each ray in the beam; or the sum of incidence and exit angles is a constant or a non-constant function.

    摘要翻译: 可用于离子注入系统的准直器磁体(CM)提供具有大孔的出射离子束,在一个平面或正交平面上基本平行。 CM包括由接收离子束的入射边缘限定的相同极点和输出用于植入的离子束的出射边缘。 由于CM内部的磁力和CM外部的磁场边缘效应,发生离子束偏转。 CM入射和/或出射边缘通过求解微分方程来补偿磁场边缘效应和任选的空间电荷效应和离子束初始非平行度来成形。 CM形状是通过强制入射角或出射角基本上恒定的,或入射角和出射角对于光束中的每个射线具有相反的符号而相等的绝对值; 或者入射角和出射角的和是常数或非常数函数。

    ION IMPLANTER PROVIDED WITH BEAM DEFLECTOR AND ASYMMETRICAL EINZEL LENS
    8.
    发明申请
    ION IMPLANTER PROVIDED WITH BEAM DEFLECTOR AND ASYMMETRICAL EINZEL LENS 有权
    带有光束偏转器和非对称耳罩的离子植入体

    公开(公告)号:US20110220808A1

    公开(公告)日:2011-09-15

    申请号:US12905525

    申请日:2010-10-15

    申请人: Dan Nicolaescu

    发明人: Dan Nicolaescu

    IPC分类号: H01J3/14

    摘要: An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.

    摘要翻译: 离子注入机具有光束偏转器,其具有在az方向上彼此面对的一对磁极,设置在各个磁极上的绝缘构件,设置在绝缘构件上的至少一对电极,以跨越空间通过 离子束在z方向上通过的至少一个电源,以及被配置为向一对电极施加电压的至少一个电源。 光束偏转器被配置为通过磁场使离子束的整体形状偏转,以便基本上平行于x方向。 该对电极具有比y方向上的离子束尺寸长的尺寸,并且在离子束的中心轨道的行进方向上构成不对称的einzel透镜。