公开(公告)号：US20100086784A1

公开(公告)日：2010-04-08

申请号：US12244604

申请日：2008-10-02

申请人： KAILASH KIRAN PATALAY ,  Jean R. Vatus ,  Dean Berlin

发明人： KAILASH KIRAN PATALAY ,  Jean R. Vatus ,  Dean Berlin

IPC分类号： B05C13/00 ,  B32B9/04

CPC分类号： H01L21/68785 ,  H01L21/67115 ,  H01L21/68742 ,  Y10T428/31504

摘要： Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.

摘要翻译： 本文提供了提供改善的基板的方位角热均匀性的方法和装置。 在一些实施例中，用于半导体处理室的衬底支撑件包括基座板; 以及支撑构件，其支撑靠近其外边缘的基座板的背面，其中支撑构件基本上覆盖基座板的背面。 在一些实施例中，衬底支撑件设置在具有至少一些设置在支撑构件下方并用于加热感受板的背面的灯的处理室中。

公开(公告)号：US20110259432A1

公开(公告)日：2011-10-27

申请号：US13175499

申请日：2011-07-01

申请人： DAVID KEITH CARLSON ,  SATHEESH KUPPURAO ,  HOWARD BECKFORD ,  HERMAN DINIZ ,  KAILASH KIRAN PATALAY ,  BRIAN HAYES BURROWS ,  JEFFREY RONALD CAMPBELL ,  ZOUMING ZHU ,  XIAOWEI LI ,  ERROL ANTONIO SANCHEZ

发明人： DAVID KEITH CARLSON ,  SATHEESH KUPPURAO ,  HOWARD BECKFORD ,  HERMAN DINIZ ,  KAILASH KIRAN PATALAY ,  BRIAN HAYES BURROWS ,  JEFFREY RONALD CAMPBELL ,  ZOUMING ZHU ,  XIAOWEI LI ,  ERROL ANTONIO SANCHEZ

IPC分类号： C23C16/48 ,  H05B6/00 ,  F15D1/00

CPC分类号： C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

摘要： A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

摘要翻译： 提供了一种用于将前体材料输送到处理室的方法和装置。 在一个实施例中，提供了沉积设备。 该装置包括具有纵向轴线的腔室和联接到腔室的侧壁的气体分配组件。 气体分配组件包括耦合到一个或多个气体源的多个增压室，被定位成向多个增压室中的每一个提供能量的能量源以及耦合到该能量源的可变电源，其中该气体分配组件提供一个 通过腔室的流动通道，其垂直于腔室的纵向轴线。

公开(公告)号：US20100124248A1

公开(公告)日：2010-05-20

申请号：US12273809

申请日：2008-11-19

申请人： KAILASH KIRAN PATALAY ,  Aaron Muir Hunter ,  Bruce E. Adams

发明人： KAILASH KIRAN PATALAY ,  Aaron Muir Hunter ,  Bruce E. Adams

IPC分类号： G01J5/00

CPC分类号： H01L21/67248

摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.

摘要翻译： 基板处理系统包括处理室，用于支撑设置在处理室内的基板的基座和耦合到处理室的光学高温测量组件，以测量基本上从基座或基板的一部分发出的发射光。 光学高温测量组件还包括光接收器和光学检测器。 光学高温计组件接收一部分发射的光，并且基于发射光的至少一个波长附近的部分的强度确定衬底的温度。 一种在处理过程中测量基板的温度的方法，包括在支撑基板或基座的基座的一部分附近设置光管，将光管的端部遮蔽于杂散光，使得光管的端部接收来自 基座或基板的部分，用气体吹扫光管的端部，以减少光管的端部的污染，检测从基座发射并被光管接收的光的一部分，并且确定温度 从基板或基板的发射光的部分的强度接近至少一个波长。

公开(公告)号：US20080066684A1

公开(公告)日：2008-03-20

申请号：US11868289

申请日：2007-10-05

申请人： KAILASH KIRAN PATALAY ,  Craig Metzner ,  Jean Vatus

发明人： KAILASH KIRAN PATALAY ,  Craig Metzner ,  Jean Vatus

IPC分类号： C23C16/00

CPC分类号： C23C16/4585 ,  C23C16/45521 ,  H01L21/68728 ,  H01L21/68735

摘要： Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.

摘要翻译： 本文提供了在外延沉积工艺期间减少衬底上自动掺杂和背面缺陷的方法和装置。 在一些实施例中，用于减少衬底上的自动掺杂和背面缺陷的装置包括衬底支撑环，衬底支撑环具有衬底保持器结构，该衬底支撑结构构造成将衬底支撑在沿着由衬底背面限定的边缘处理的位置， 衬底或沿着边缘上或附近的多个离散点; 以及间隔环，用于将衬底支撑环定位在基座板上方以限定基座板和衬底背面之间的衬底间隙区域，间隔环包括穿过其中形成的多个开口，其有助于气体进入和离开 的衬底间隙区域。