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公开(公告)号：US20120031454A1
公开(公告)日：2012-02-09
申请号：US12852991
申请日：2010-08-09
IPC分类号： H01L31/042 , H01L31/18 , H01L31/04
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译： 光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。 连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。 光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。
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公开(公告)号：US20120060905A1
公开(公告)日：2012-03-15
申请号：US12879209
申请日：2010-09-10
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/1804 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
摘要翻译： 光电器件和方法包括在衬底层上沉积金属膜。 金属膜退火以在基底层上形成金属膜岛。 使用岛作为蚀刻掩模蚀刻衬底层，以在衬底层中形成柱。
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公开(公告)号：US20120192913A1
公开(公告)日：2012-08-02
申请号：US13017671
申请日：2011-01-31
IPC分类号： H01L27/142 , H01L31/18
CPC分类号： H01L31/076 , H01L31/18 , Y02E10/548
摘要： Fabrication of a tandem photovoltaic device includes forming a bottom cell having an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. A top cell is formed relative to the bottom cell. The top cell has an N-type layer, a P-type layer and a top intrinsic layer therebetween. The top intrinsic layer is formed of an undoped material deposited at a temperature that is different from the bottom intrinsic layer such that band gap energies for the top intrinsic layer and the bottom intrinsic layer are progressively lower for each cell.
摘要翻译： 串联光伏器件的制造包括在其间形成具有N型层，P型层和底部本征层的底部电池。 相对于底部单元形成顶部单元。 顶部单元具有N型层，P型层和顶层本征层。 顶部本征层由在不同于底部本征层的温度沉积的未掺杂材料形成，使得顶部本征层和底部本征层的带隙能量对于每个单元而言逐渐降低。
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公开(公告)号：US20130298980A1
公开(公告)日：2013-11-14
申请号：US13468266
申请日：2012-05-10
IPC分类号： H01L31/0236 , B32B3/30 , H01L31/04 , H01L31/18
CPC分类号： H01L31/02366 , H01L31/046 , H01L31/047 , H01L31/075 , H01L31/18 , Y02E10/50 , Y10T428/24479
摘要： A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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公开(公告)号：US20130000706A1
公开(公告)日：2013-01-03
申请号：US13613041
申请日：2012-09-13
IPC分类号： H01L31/06 , H01L31/0376
CPC分类号： H01L31/077 , H01L31/075 , H01L31/1812 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device and method for fabricating a photovoltaic device include forming a light-absorbing semiconductor structure on a transmissive substrate including a first doped layer and forming an intrinsic layer on the first doped layer, wherein the intrinsic layer includes an amorphous material. The intrinsic layer is treated with a plasma to form seed sites. A first tunnel junction layer is formed on the intrinsic layer by growing microcrystals from the seed sites.
摘要翻译： 一种用于制造光伏器件的光伏器件和方法包括在包括第一掺杂层并在第一掺杂层上形成本征层的透射衬底上形成光吸收半导体结构，其中本征层包括无定形材料。 用等离子体处理本征层以形成种子位点。 通过从种子部位生长微晶，在本征层上形成第一隧道结层。
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公开(公告)号：US20130000704A1
公开(公告)日：2013-01-03
申请号：US13173097
申请日：2011-06-30
IPC分类号： H01L31/06 , H01L31/0352
CPC分类号： H01L31/02366 , H01L31/022483 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03762 , H01L31/075 , H01L31/077 , H01L31/1804 , H01L31/1888 , Y02E10/50
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
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公开(公告)号：US20120318335A1
公开(公告)日：2012-12-20
申请号：US13161081
申请日：2011-06-15
CPC分类号： H01L31/077 , H01L31/075 , H01L31/1812 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device and method for fabricating a photovoltaic device include forming a light-absorbing semiconductor structure on a transmissive substrate including a first doped layer and forming an intrinsic layer on the first doped layer, wherein the intrinsic layer includes an amorphous material. The intrinsic layer is treated with a plasma to form seed sites. A first tunnel junction layer is formed on the intrinsic layer by growing microcrystals from the seed sites.
摘要翻译： 一种用于制造光伏器件的光伏器件和方法包括在包括第一掺杂层并在第一掺杂层上形成本征层的透射衬底上形成光吸收半导体结构，其中本征层包括无定形材料。 用等离子体处理本征层以形成种子位点。 通过从种子部位生长微晶，在本征层上形成第一隧道结层。
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