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公开(公告)号：US20200251887A1
公开(公告)日：2020-08-06
申请号：US16488595
申请日：2018-02-27
发明人： Susumu NODA , Yoshinori TANAKA , Menaka DE ZOYSA , Junichi SONODA , Tomoaki KOIZUMI , Kei EMOTO
摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) of growing a first cladding layer of a first conductive type on a substrate; (b) of growing a first optical guide layer of the first conductive type on the first cladding layer; (c) of forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) of planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after said the planarizing, at least one side surface of the holes is a {10-10} facet.
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公开(公告)号：US20210184430A1
公开(公告)日：2021-06-17
申请号：US17123126
申请日：2020-12-16
发明人： Susumu NODA , Tomoaki KOIZUMI , Kei EMOTO
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10-10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.
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公开(公告)号：US20210013700A1
公开(公告)日：2021-01-14
申请号：US16956512
申请日：2018-12-17
发明人： Susumu NODA , Yoshinori TANAKA , Menaka DE ZOYSA , Tomoaki KOIZUMI , Kei EMOTO
摘要： A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.
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公开(公告)号：US20210328406A1
公开(公告)日：2021-10-21
申请号：US17272385
申请日：2019-08-29
发明人： Susumu NODA , Yoshinori TANAKA , Menaka DE ZOYSA , Kenji ISHIZAKI , Tomoaki KOIZUMI , Kei EMOTO
摘要： A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.
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公开(公告)号：US20210184431A1
公开(公告)日：2021-06-17
申请号：US17123133
申请日：2020-12-16
发明人： Susumu NODA , Tomoaki KOIZUMI , Kei EMOTO
摘要： A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
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公开(公告)号：US20230127863A1
公开(公告)日：2023-04-27
申请号：US17911643
申请日：2021-02-10
发明人： Susumu NODA , Takuya INOUE , Tomoaki KOIZUMI , Kei EMOTO
摘要： A surface-emitting laser element includes: a first guide layer including a photonic crystal layer that is formed on a c plane of a group-3 nitride semiconductor and includes air holes arranged with two-dimensional periodicity in a plane parallel to the photonic crystal layer, and an embedding layer that is formed on the photonic crystal layer and closes the air holes; an active layer formed on the first guide layer; and a second guide layer formed on the active layer, wherein an air hole set including at least a main air hole and a sub-air hole smaller in size than the main air hole is arranged at each square lattice point in the plane parallel to the photonic crystal layer, and wherein the main air hole has a regular-hexagonal prism shape, a long-hexagonal prism shape, or an elliptic cylindrical shape with a major axis parallel to a axis.
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公开(公告)号：US20210318493A1
公开(公告)日：2021-10-14
申请号：US17273319
申请日：2019-09-13
发明人： Yoko INOUE , Masato KAWASAKI , Tatsuya YAMAMOTO , Kazuki KUBA , Susumu NODA
摘要： A multiplexing optical system includes a light source, a lens and a lens array. The light source includes a plurality of light emitting elements of surface emitting lasers. The lens is configured to change and condense optical paths of laser light beams emitted from the light emitting elements. The lens array includes a plurality of lens regions arrayed so as to correspond to respective optical paths of the laser light beams changed by the lens, and is configured to condense the laser light beams by the lens regions to form a multiplexed beam.
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公开(公告)号：US20180348451A1
公开(公告)日：2018-12-06
申请号：US15570856
申请日：2016-04-07
发明人： Tatsuya YAMAMOTO , Kazuki KUBA , Masato KAWASAKI , Yoko INOUE , Tetsuo KOJIMA , Junichi NISHIMAE , Susumu NODA
CPC分类号： G02B6/42 , G02B6/4206 , G02B6/425 , H01S5/005 , H01S5/02284 , H01S5/105 , H01S5/18 , H01S5/4012 , H01S5/42
摘要： A laser module includes: a photonic crystal surface-emitting laser element; a collimating lens array for producing a parallel optical beam; a condenser lens for condensing the optical beam; and an optical fiber which receives the optical beam on one end and transmits the optical beam to the outside. In the collimating lens array, an aperture portion corresponding to a collimating lens allows passage of the optical beam with an energy of not less than 94.0% and not more than 99.5% with respect to 100% of the energy of the optical beam incident on the collimating lens array.
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公开(公告)号：US20170256911A1
公开(公告)日：2017-09-07
申请号：US15505560
申请日：2015-08-28
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/0654 , H01S5/18 , H01S5/18319 , H01S5/34313 , H01S5/34353
摘要： A two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, particularly optical output , which includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode, wherein the first electrode is formed so as to supply the current to the active layer with a different density depending on the in-plane position on the first electrode.
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公开(公告)号：US20170222399A1
公开(公告)日：2017-08-03
申请号：US15120149
申请日：2015-02-13
CPC分类号： H01S5/105 , H01L2224/48091 , H01S5/005 , H01S5/0078 , H01S5/02208 , H01S5/02276 , H01S5/02292 , H01S5/02296 , H01S5/042 , H01S5/0425 , H01S5/06216 , H01S5/0622 , H01S5/0653 , H01S5/18 , H01S5/34313 , H01S5/34353 , H01L2924/00014
摘要： A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.
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