公开(公告)号：US20160099357A2

公开(公告)日：2016-04-07

申请号：US14721779

申请日：2015-05-26

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)

发明人： Hiroshi GOTO ,  Aya MIKI ,  Tomoya KISHI ,  Kenta HIROSE ,  Shinya MORITA ,  Toshihiro KUGIMIYA

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L27/12

CPC分类号： H01L29/78693 ,  C23C14/08 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78696

摘要： Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.

公开(公告)号：US20200282932A1

公开(公告)日：2020-09-10

申请号：US16788368

申请日：2020-02-12

申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

发明人： Shinya MORITA ,  Narikazu Hashimoto ,  Tsunetake Tsuyoshi ,  Koji Tabata

IPC分类号： B60R19/18 ,  B60R19/02

摘要： To compensate for a decrease in reaction force of a bumper reinforcement, which is made of an aluminum alloy extrusion having two end portions subjected to bend forming and crushed portions on the respective end portions, against an impact load in end impact involved in crushing, and compensate for a decrease in energy absorption amount of the bumper reinforcement. Assuming a space between two flanges includes a first region from a center line of the thickness between the flanges to an outer flange and a second region from the center line to an inner flange in a cross section of the crushed portion perpendicular to an extrusion direction, area of the webs located in one (for example, the first region) of the two regions is larger than area of the webs located in the other region (for example, the second region).

公开(公告)号：US20200164419A1

公开(公告)日：2020-05-28

申请号：US16775346

申请日：2020-01-29

申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

发明人： Shinya MORITA ,  Tsunetake TSUYOSHI

IPC分类号： B21C23/08 ,  B60J5/04 ,  C22F1/053 ,  C22C21/10 ,  B21C25/02

摘要： A door beam including an aluminum alloy extrusion extended in a longitudinal direction and having a pair of webs and a pair of flanges to be positioned on an inside and an outside in a vehicle width direction. The pair of webs connect the pair of flanges at joint portions of each of the pair of webs such that the pair of webs and the pair of flanges form a closed cross section in a direction perpendicular to the longitudinal direction, and each of the pair of webs has a welded portion in a vicinity of a neutral axis passing through a centroid of the closed cross section and parallel to the pair of flanges.

公开(公告)号：US20150318400A1

公开(公告)日：2015-11-05

申请号：US14439894

申请日：2013-12-26

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO(KOBE STEEL, LTD.)

发明人： Shinya MORITA ,  Mototaka OCHI ,  Hiroshi GOTO ,  Toshihiro KUGIMIYA ,  Kenta HIROSE ,  Hiroaki TAO ,  Yasuyuki TAKANASHI

IPC分类号： H01L29/786 ,  H01L29/45 ,  H01L21/465 ,  H01L21/4763 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C01G19/00 ,  H01L21/465 ,  H01L21/47635 ,  H01L21/477 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606

摘要： Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end−the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%.

摘要翻译： 提供了没有蚀刻停止层的背沟道蚀刻（BCE）薄膜晶体管（TFT），其中TFT的氧化物半导体层对形成源极 - 漏极电极时使用的酸蚀刻剂具有优异的耐性，并且具有优异的 应力稳定。 该TFT包括栅极，栅极绝缘膜，氧化物半导体层，源 - 漏电极和保护源 - 漏电极的钝化膜。 氧化物半导体层包含选自锡，铟，镓和锌的一种或多种元素; 和氧气; 和TFT的层叠方向的截面的值，由[100×（在源极 - 漏极电极的正下方的氧化物半导体层的厚度 - 半导体层的中心部分的厚度）的厚度确定） /源极 - 漏极电极端的正下方的半导体层的厚度]不大于5％。

公开(公告)号：US20190321871A1

公开(公告)日：2019-10-24

申请号：US16393502

申请日：2019-04-24

申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)

发明人： Shinya MORITA ,  Tsunetake TSUYOSHI

IPC分类号： B21C23/08 ,  B21C25/02 ,  C22F1/053 ,  C22C21/10 ,  B60J5/04

摘要： A door beam including an aluminum alloy extrusion extended in a longitudinal direction and having a pair of webs and a pair of flanges to be positioned on an inside and an outside in a vehicle width direction. The pair of webs connect the pair of flanges at joint portions of each of the pair of webs such that the pair of webs and the pair of flanges form a closed cross section in a direction perpendicular to the longitudinal direction, and each of the pair of webs has a welded portion in a vicinity of a neutral axis passing through a centroid of the closed cross section and parallel to the pair of flanges.

公开(公告)号：US20170053800A1

公开(公告)日：2017-02-23

申请号：US15290715

申请日：2016-10-11

申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.) ,  Samsung Display Co. , Ltd.

发明人： Hiroaki TAO ,  Aya MIKI ,  Shinya MORITA ,  Satoshi YASUNO ,  Toshihiro KUGIMIYA ,  Jae Woo PARK ,  Je Hun LEE ,  Byung Du AHN ,  Gun Hee KIM

IPC分类号： H01L21/02 ,  H01L21/477

CPC分类号： H01L21/02554 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02587 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/12 ,  H01L29/66969 ,  H01L29/7869

摘要： The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

摘要翻译： 用于薄膜晶体管的本发明的氧化物是含有In，Zn和Sn的In-Zn-Sn系氧化物，其中，当In-Zn-Sn系中含有的金属元素的含量（原子％ 当[In] /（[In] + [Sn]）[Zn]，[In] + [Sn]表示[Zn]，[Sn]和[In]时，In-Zn-Sn系氧化物满足下述（2） ]）≤0.5; 当[In] /（[In] + [Sn]）> 0.5时，或以下表达式（1），（3）和（4）。 [In] /（[In] + [Zn] + [Sn]）≤0.3 - - - （1），[In] /（[In] + [Zn] + [Sn]）≤1.4×{[Zn] /([Zn]+[Sn])}-0.5 - - - （2），[Zn] /（[In] + [Zn] + [Sn]）≤0.83 - - - （3）和0.1≤[ In] /（[In] + [Zn] + [Sn]） - - - （4）。 根据本发明，可以获得用于薄膜晶体管的氧化物薄膜，其提供具有优异的开关特性的TFT，并且在溅射中具有高溅射速率并且在湿蚀刻中具有适当控制的蚀刻速率。