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公开(公告)号：US10950391B2
公开(公告)日：2021-03-16
申请号：US16599146
申请日：2019-10-11
发明人： Shigehiko Mori , Hideyuki Nakao , Takeshi Gotanda , Haruhi Oooka , Kenji Todori , Kenji Fujinaga
IPC分类号： H01G9/20 , H01L51/00 , H01G9/00 , H01L51/44 , H01L51/42 , H01L21/67 , H01L29/84 , H01L23/40 , H01L21/447 , H01L21/603 , H01L21/768 , H01L21/60 , H01L21/322 , H01L21/66
摘要： A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.
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公开(公告)号：US10403838B2
公开(公告)日：2019-09-03
申请号：US15258517
申请日：2016-09-07
发明人： Hyangmi Jung , Atsuko Iida , Takeshi Gotanda , Hideyuki Nakao , Shigehiko Mori , Kenji Todori
IPC分类号： H01L51/44 , H01L31/0203 , H01L31/0216 , H02S50/10
摘要： A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.
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公开(公告)号：US10388465B2
公开(公告)日：2019-08-20
申请号：US15692855
申请日：2017-08-31
发明人： Takeshi Gotanda , Haruhi Oooka
摘要： The present embodiments provide a highly durable semiconductor element capable of generating electricity or emitting light with high efficiency, and further provide a manufacturing method thereof. The semiconductor element according to the embodiment comprises a first electrode, a second electrode, an active layer and a substrate, and is characterized in that the active layer contains crystals oriented anisotropically. For manufacturing the element, the active layer is produced by the steps of: applying a coating solution containing precursor compounds of the active layer and an organic solvent capable of dissolving the precursor compounds, to form a coating film; and then growing the crystals in a specific direction parallel to the surface of the coating film.
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公开(公告)号：US09698349B2
公开(公告)日：2017-07-04
申请号：US15072772
申请日：2016-03-17
CPC分类号： H01L51/0036 , C08G75/00 , C08G2261/41 , C08G2261/51 , H01L51/0043 , H01L51/42 , H01L51/4253 , Y02E10/549
摘要： A polymer of an embodiment includes a recurring unit containing at least one bivalent group selected from among a formula (1), a formula (2), a formula (3), and a formula (4). Z1 indicates carbon having an R1 group, nitrogen, or the like. Z2 indicates oxygen, sulfur, selenium, nitrogen having an R2 group, or the like. The R1 and R2 groups indicate hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or the like, X indicates oxygen, sulfur, selenium, or the like.
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公开(公告)号：US20220140165A1
公开(公告)日：2022-05-05
申请号：US17573666
申请日：2022-01-12
发明人： Katsuya Yamashita , Haiyan Jin , Miyuki Shiokawa , Takeshi Gotanda , Tomohiro Tobari , Yutaka Saita
IPC分类号： H01L31/046 , H01L31/0443 , H01L31/048 , H01L31/02
摘要： A solar battery module according to an embodiment has at least one solar battery panel, a flexible substrate and a package. A solar battery cell is formed in the at least one solar battery panel. The flexible substrate is directly or indirectly connected to the at least one solar battery panel. A bypass diode is mounted on the flexible substrate.
The flexible substrate forms a bypass line of the at least one solar battery panel. The package accommodates the at least one solar battery panel. The flexible substrate has a base material and a wiring. The wiring is supported by the base material. The wiring has a flying lead and a terminal. The flying lead protrudes from the base material. The flying lead is connected to the at least one solar battery panel. The terminal is provided on an outward side of the package.-
公开(公告)号：US10950810B2
公开(公告)日：2021-03-16
申请号：US16690369
申请日：2019-11-21
发明人： Takeshi Gotanda , Hyangmi Jung
摘要： A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.
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公开(公告)号：US10468616B2
公开(公告)日：2019-11-05
申请号：US15679286
申请日：2017-08-17
发明人： Haruhi Oooka , Atsuko Iida , Hideyuki Nakao , Kenji Todori , Takeshi Gotanda
摘要： A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2 (1) Here, n: 1 to 20, and R1, R2: halogen or SH
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公开(公告)号：US10446757B2
公开(公告)日：2019-10-15
申请号：US14938066
申请日：2015-11-11
发明人： Hyangmi Jung , Takeshi Gotanda , Kenji Todori
摘要： An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group. The bond group contains a bivalent aromatic hydrocarbon group and a bivalent organic group which includes a carbon atom chain having 1 to 18 single-bonded carbon(s) or an atom chain in which a part of the carbon atom chain is substituted by at least one element selected from oxygen, nitrogen, and sulfur, as a main chain.
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公开(公告)号：US20190019952A1
公开(公告)日：2019-01-17
申请号：US16133343
申请日：2018-09-17
发明人： Takeshi Gotanda , Shigehiko Mori , Akihiro Matsui , Haruhi Oooka
摘要： The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.
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公开(公告)号：US09818945B2
公开(公告)日：2017-11-14
申请号：US14967675
申请日：2015-12-14
CPC分类号： H01L51/0036 , C08G61/126 , C08G75/00 , C08G2261/1412 , C08G2261/1424 , C08G2261/148 , C08G2261/149 , C08G2261/314 , C08G2261/3243 , C08G2261/344 , C08G2261/91 , H01L51/0043 , H01L51/0047 , H01L51/4253 , Y02E10/549
摘要： In one embodiment, a polymer includes a repeating unit represented by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 indicates a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. R2, R3, and R4 indicate independently a monovalent group selected from hydrogen, halogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aromatic group, and a substituted or unsubstituted hetero-aromatic group. X, Y, and Z indicate independently an atom selected from O, S, and Se.
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