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    NONVOLATILE SEMICONDUCTOR MEMORY
    3.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY 有权
    非易失性半导体存储器

    公开(公告)号：US20140167133A1

    公开(公告)日：2014-06-19

    申请号：US14108633

    申请日：2013-12-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Izumi HIRANO ,  Yuichiro Mitani ,  Masayasu Miyata ,  Yasushi Nakasaki ,  Koichi Kato ,  Daisuke Matsushita ,  Akira Takashima ,  Misako Morota

    IPC分类号： H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/511 ,  H01L29/7881 ,  H01L29/7889

    摘要： A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing.

    摘要翻译： 根据实施例的非易失性半导体存储器包括：半导体区域; 形成在半导体区域上的第一绝缘膜; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的氢扩散防止膜; 在氢扩散防止膜上形成的第二绝缘膜; 形成在所述第二绝缘膜上的控制栅电极; 形成在控制栅电极上的氢放电膜; 以及形成在包括第一绝缘膜，电荷存储膜，氢扩散防止膜，第二绝缘膜和控制栅电极的多层结构的侧表面上的侧壁，所述侧壁包含用于防止氢扩散的材料 。

    Non-volatile semiconductor memory device and method of manufacturing the same
    4.
    发明授权
    Non-volatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08546868B2

    公开(公告)日：2013-10-01

    申请号：US13766146

    申请日：2013-02-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yasushi Nakasaki ,  Koichi Muraoka ,  Naoki Yasuda ,  Shoko Kikuchi

    IPC分类号： H01L29/788

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/513 ,  H01L29/7881

    摘要： A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of Al2O3.

    摘要翻译： 一种能够电写入，擦除，读取和保留数据的MONOS型非易失性半导体存储器件，所述存储器件包括源极/漏极区，第一栅极绝缘层，形成在第一栅极绝缘层上的第一电荷俘获层 形成在第一电荷俘获层上的第二栅极绝缘层，以及形成在第二栅极绝缘层上的控制电极。 第一电荷俘获层包括含有Al和O作为主要元素并且具有由间隙O原子和四价阳离子原子的复合物形成的缺陷对的绝缘膜，代替Al原子，绝缘膜还具有电子未占有的含量 从Al2O3的价带最大值测量的2eV-6eV的范围。

    Nonvolatile semiconductor memory
    6.
    发明授权
    Nonvolatile semiconductor memory 有权
    非易失性半导体存储器

    公开(公告)号：US09349876B2

    公开(公告)日：2016-05-24

    申请号：US14108633

    申请日：2013-12-17

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Izumi Hirano ,  Yuichiro Mitani ,  Masayasu Miyata ,  Yasushi Nakasaki ,  Koichi Kato ,  Daisuke Matsushita ,  Akira Takashima ,  Misako Morota

    IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788

    CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/511 ,  H01L29/7881 ,  H01L29/7889

    摘要： A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing.

    摘要翻译： 根据实施例的非易失性半导体存储器包括：半导体区域; 形成在半导体区域上的第一绝缘膜; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的氢扩散防止膜; 在氢扩散防止膜上形成的第二绝缘膜; 形成在所述第二绝缘膜上的控制栅电极; 形成在控制栅电极上的氢放电膜; 以及形成在包括第一绝缘膜，电荷存储膜，氢扩散防止膜，第二绝缘膜和控制栅电极的多层结构的侧表面上的侧壁，所述侧壁包含用于防止氢扩散的材料 。