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公开(公告)号：US07786594B2
公开(公告)日：2010-08-31
申请号：US11822630
申请日：2007-07-09
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected.
摘要翻译： 一种晶片级堆叠结构，包括包括第一芯片尺寸的至少一个第一器件芯片的第一晶片，其中每个第一器件芯片包含第一多个输入/输出（I / O）焊盘，第二晶片包括至少一个 第二芯片尺寸小于第一芯片尺寸的第二器件芯片，其中每个第二器件芯片包含第二多个I / O焊盘，其中所述至少一个第二器件芯片增加到所述第一芯片尺寸，其中所述第一晶片 并且第二晶片被堆叠，并且其中第一晶片和第二晶片彼此耦合。 一种系统级封装，包括晶片级堆叠结构，其包括具有第一多个输入/输出（I / O）焊盘的至少一个第一器件芯片和至少一个具有第二多个I / O焊盘的第二器件芯片 ，以及与晶片级堆叠结构连接的公共电路板。
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公开(公告)号：US20070170576A1
公开(公告)日：2007-07-26
申请号：US11727760
申请日：2007-03-28
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
IPC分类号： H01L23/02
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A method of forming a wafer level stack structure, including forming a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, forming a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected. A method of forming a system-in-package for containing a wafer level stack structure, including forming a wafer level stack structure including at least one first device chip having a first plurality of input/output (I/O) pads and at least one second device chip having a second plurality of I/O pads, and forming a common circuit board to which the wafer level stack structure is connected.
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公开(公告)号：US07824959B2
公开(公告)日：2010-11-02
申请号：US11727760
申请日：2007-03-28
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
IPC分类号： H01L21/44
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of forming a wafer level stack structure, including forming a first wafer including a first device chip, wherein the first device chip includes a plurality of input/output (I/O) pads, forming a second wafer including a second device chip, wherein each second device chip contains a second plurality of I/O pads, the second device chip is approximately equal in size to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A method of forming a system-in-package for containing a wafer level stack structure, including forming a wafer level stack structure including a first device chip having a first plurality of input/output (I/O) pads and a second device chip having a second plurality of I/O pads, and forming a common circuit board to which the wafer level stack structure is connected.
摘要翻译： 一种形成晶片级堆叠结构的方法，包括形成包括第一器件芯片的第一晶片，其中所述第一器件芯片包括多个输入/输出（I / O）焊盘，形成包括第二器件芯片的第二晶片， 其中每个第二器件芯片包含第二多个I / O焊盘，所述第二器件芯片的大小与第一芯片尺寸大致相等，堆叠第一晶片和第二晶片，并将第一晶片和第二晶片耦合到每个 其他。 一种形成用于包含晶片级堆叠结构的系统级封装的方法，包括形成晶片级堆叠结构，其包括具有第一多个输入/输出（I / O）焊盘的第一器件芯片和具有第一器件芯片的第二器件芯片， 第二多个I / O焊盘，并且形成连接晶片级堆叠结构的公共电路板。
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公开(公告)号：US20050104181A1
公开(公告)日：2005-05-19
申请号：US10899175
申请日：2004-07-27
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
IPC分类号： H01L23/48 , H01L25/065 , H01L23/02
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A method of forming a wafer level stack structure, including forming a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, forming a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected. A method of forming a system-in-package for containing a wafer level stack structure, including forming a wafer level stack structure including at least one first device chip having a first plurality of input/output (I/O) pads and at least one second device chip having a second plurality of I/O pads, and forming a common circuit board to which the wafer level stack structure is connected.
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公开(公告)号：US20100320597A1
公开(公告)日：2010-12-23
申请号：US12805321
申请日：2010-07-26
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
IPC分类号： H01L23/48
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A system-in-package, comprising a wafer level stack structure, including at least one first device chip including a first device region having a plurality of input/output(I/O) pads, and at least one second device chip including a second device region having a plurality of input/output(I/O) pads and a second peripheral region surrounding the second device region, wherein the size of the second device region is different from the size of the first device region, wherein the at least one first device chip and the at least one second device chip have approximately equal size; and a common circuit board to which the wafer level stack structure is connected.
摘要翻译： 一种系统级封装，包括晶片级堆叠结构，其包括至少一个包括具有多个输入/输出（I / O）焊盘的第一器件区域的第一器件芯片，以及包括第二器件芯片的至少一个第二器件芯片 器件区域具有多个输入/输出（I / O）焊盘和围绕第二器件区域的第二外围区域，其中第二器件区域的尺寸不同于第一器件区域的尺寸，其中至少一个 第一器件芯片和至少一个第二器件芯片具有大致相等的尺寸; 以及连接晶片级堆叠结构的公共电路板。
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公开(公告)号：US08278766B2
公开(公告)日：2012-10-02
申请号：US12805321
申请日：2010-07-26
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A system-in-package, comprising a wafer level stack structure, including at least one first device chip including a first device region having a plurality of input/output(I/O) pads, and at least one second device chip including a second device region having a plurality of input/output(I/O) pads and a second peripheral region surrounding the second device region, wherein the size of the second device region is different from the size of the first device region, wherein the at least one first device chip and the at least one second device chip have approximately equal size; and a common circuit board to which the wafer level stack structure is connected.
摘要翻译： 一种系统级封装，包括晶片级堆叠结构，其包括至少一个包括具有多个输入/输出（I / O）焊盘的第一器件区域的第一器件芯片，以及包括第二器件芯片的至少一个第二器件芯片 器件区域具有多个输入/输出（I / O）焊盘和围绕第二器件区域的第二外围区域，其中第二器件区域的尺寸不同于第一器件区域的尺寸，其中至少一个 第一器件芯片和至少一个第二器件芯片具有大致相等的尺寸; 以及连接晶片级堆叠结构的公共电路板。
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公开(公告)号：US20070257350A1
公开(公告)日：2007-11-08
申请号：US11822630
申请日：2007-07-09
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
IPC分类号： H01L23/02
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A method of forming a wafer level stack structure, including forming a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, forming a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected. A method of forming a system-in-package for containing a wafer level stack structure, including forming a wafer level stack structure including at least one first device chip having a first plurality of input/output (I/O) pads and at least one second device chip having a second plurality of I/O pads, and forming a common circuit board to which the wafer level stack structure is connected.
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公开(公告)号：US07215033B2
公开(公告)日：2007-05-08
申请号：US10899175
申请日：2004-07-27
申请人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
发明人： Kang-Wook Lee , Se-Yong Oh , Young-Hee Song , Gu-Sung Kim
CPC分类号： H01L25/50 , H01L23/3128 , H01L23/481 , H01L23/5389 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/48 , H01L24/49 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/02379 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/06181 , H01L2224/13025 , H01L2224/13099 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48095 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2924/00 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A wafer level stack structure, including a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, wherein the first wafer and the second wafer are stacked, and wherein the first wafer and the second wafer are coupled to each other. A method of forming a wafer level stack structure, including forming a first wafer including at least one first device chip of a first chip size, wherein each first device chip contains a first plurality of input/output (I/O) pads, forming a second wafer including at least one second device chip of a second chip size smaller than the first chip size, wherein each second device chip contains a second plurality of I/O pads, wherein the at least one second device chip is increased to the first chip size, stacking the first wafer and the second wafer, and coupling the first wafer and the second wafer to each other. A system-in-package, including a wafer level stack structure including at least one first device chip with a first plurality of input/output (I/O) pads and at least one second device chip with a second plurality of I/O pads, and a common circuit board to which the wafer level stack structure is connected.
摘要翻译： 一种晶片级堆叠结构，包括包括第一芯片尺寸的至少一个第一器件芯片的第一晶片，其中每个第一器件芯片包含第一多个输入/输出（I / O）焊盘，第二晶片包括至少一个 第二芯片尺寸小于第一芯片尺寸的第二器件芯片，其中每个第二器件芯片包含第二多个I / O焊盘，其中所述至少一个第二器件芯片增加到所述第一芯片尺寸，其中所述第一晶片 并且第二晶片被堆叠，并且其中第一晶片和第二晶片彼此耦合。 一种形成晶片级堆叠结构的方法，包括形成包括第一芯片尺寸的至少一个第一器件芯片的第一晶片，其中每个第一器件芯片包含第一多个输入/输出（I / O）焊盘，形成 第二晶片，其包括小于第一芯片尺寸的第二芯片尺寸的至少一个第二器件芯片，其中每个第二器件芯片包含第二多个I / O焊盘，其中所述至少一个第二器件芯片增加到所述第一芯片 尺寸，堆叠第一晶片和第二晶片，并且将第一晶片和第二晶片彼此耦合。 一种系统级封装，包括晶片级堆叠结构，其包括具有第一多个输入/输出（I / O）焊盘的至少一个第一器件芯片和至少一个具有第二多个I / O焊盘的第二器件芯片 ，以及与晶片级堆叠结构连接的公共电路板。
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9.发明申请公开(公告)号：US20050104222A1
公开(公告)日：2005-05-19
申请号：US10944613
申请日：2004-09-20
申请人： Se-Young Jeong , Gu-Sung Kim , Nam-Seog Kim , Gi-Hwan Park , Se-Yong Oh , Soon-Bum Kim , In-Young Lee
发明人： Se-Young Jeong , Gu-Sung Kim , Nam-Seog Kim , Gi-Hwan Park , Se-Yong Oh , Soon-Bum Kim , In-Young Lee
IPC分类号： H01L23/28 , H01L21/60 , H01L23/16 , H01L23/31 , H01L23/485 , H01L23/498 , H05K3/34 , H01L23/48
CPC分类号： H01L24/13 , H01L23/16 , H01L23/3114 , H01L23/49838 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05647 , H01L2224/05655 , H01L2224/06102 , H01L2224/13076 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/1357 , H01L2224/13611 , H01L2224/1403 , H01L2224/14051 , H01L2224/14131 , H01L2224/14136 , H01L2224/14155 , H01L2224/16 , H01L2224/1601 , H01L2224/29011 , H01L2224/29013 , H01L2224/29076 , H01L2224/30155 , H01L2224/30156 , H01L2224/73103 , H01L2224/73203 , H01L2224/81141 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/351 , H05K3/3436 , H05K2201/094 , H05K2203/0465 , Y02P70/613 , H01L2924/00014 , H01L2924/01028 , H01L2924/01083 , H01L2224/13099 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2924/013
摘要： A flip chip device may have a semiconductor chip with an active surface on which chip pads and a protective layer may be provided. Solder bumps may be provided on the active surface and electrically connected to the chip pads. And a solder bar may be provided on a portion of the protective layer. The solder bar may disperse thermal stress produced in the solder bumps. A metal core may be embedded within the solder bar. The flip chip device may be mounted on and flip-chip bonded to a substrate. The substrate may have land pads to which the solder bumps and the solder bar may be mechanically joined. The solder bar increases a joint area between the flip chip device and the substrate and reinforces solder connections therebetween.
摘要翻译： 倒装芯片器件可以具有其上可以设置有芯片焊盘和保护层的有源表面的半导体芯片。 可以在活性表面上提供焊料凸块并电连接到芯片焊盘。 并且可以在保护层的一部分上设置焊料条。 焊料棒可能会分散焊料凸点产生的热应力。 金属芯可以嵌入在焊条内。 倒装芯片器件可以安装在衬底上并倒装芯片结合到衬底上。 衬底可以具有焊盘，焊盘和焊条可以焊接到其上。 焊条增加了倒装芯片器件和衬底之间的接合面积，并加强了它们之间的焊接连接。
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公开(公告)号：US07537959B2
公开(公告)日：2009-05-26
申请号：US11889400
申请日：2007-08-13
申请人： Kang-Wook Lee , Gu-Sung Kim , Dong-Hyeon Jang , Seung-Duk Baek , Jae-Sik Chung
发明人： Kang-Wook Lee , Gu-Sung Kim , Dong-Hyeon Jang , Seung-Duk Baek , Jae-Sik Chung
CPC分类号： H01L25/50 , H01L21/76898 , H01L23/481 , H01L23/5389 , H01L24/24 , H01L24/48 , H01L24/82 , H01L24/97 , H01L25/0657 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05124 , H01L2224/05166 , H01L2224/05548 , H01L2224/05556 , H01L2224/05569 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , Y02P80/30 , Y10S438/977 , Y10T436/104998 , Y10T436/108331 , Y10T436/17 , Y10T436/175383 , H01L2224/81 , H01L2224/82 , H01L2924/00 , H01L2224/05599 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A chip stack package is manufactured at a wafer level by forming connection vias in the scribe lanes adjacent the chips and connecting the device chip pads to the connection vias using rerouting lines. A lower chip is then attached and connected to a substrate, which may be a test wafer, and an upper chip is attached and connected to the lower chip, the electrical connections being achieved through their respective connection vias. In addition to the connection vias, the chip stack package may include connection bumps formed between vertically adjacent chips and/or the lower chip and the substrate. The preferred substrate is a test wafer that allows the attached chips to be tested, and replaced if faulty, thereby ensuring that each layer of stacked chips includes only “known-good die” before the next layer of chips is attached thereby increasing the production rate and improving the yield.
摘要翻译： 通过在与芯片相邻的划线中形成连接通孔并且使用重新布线将连接器件芯片焊盘连接到连接通孔，在晶片级制造芯片堆叠封装。 然后将下部芯片连接并连接到可以是测试晶片的衬底，并且上部芯片被附接并连接到下部芯片，电连接通过它们各自的连接通孔来实现。 除了连接通孔之外，芯片堆叠封装可以包括在垂直相邻的芯片和/或下部芯片和衬底之间形成的连接凸块。 优选的基板是测试晶片，其允许附接的芯片被测试并且如果有故障则被替换，从而确保每层堆叠的芯片仅在连接下一层芯片之前仅包括“已知的芯片”，从而提高生产率 并提高产量。
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