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公开(公告)号：US09048108B2
公开(公告)日：2015-06-02
申请号：US13478080
申请日：2012-05-22
IPC分类号： H01L21/8238 , H01L27/06
CPC分类号： H01L27/0629 , H01L29/0847 , H01L29/8611 , H01L29/868
摘要： An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.
摘要翻译： 在同一芯片上形成二极管和一个或多个CMOS器件的电路，平面二极管和方法。 该方法包括将二极管区域中的衬底的一部分与其它衬底区域电隔离。 该方法还包括使二极管区域中的衬底凹陷。 该方法还包括在二极管区域中外延形成在衬底上方的第一掺杂层，并在二极管区域中外延地形成第一掺杂层上方的第二掺杂层。
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公开(公告)号：US20130313651A1
公开(公告)日：2013-11-28
申请号：US13478080
申请日：2012-05-22
IPC分类号： H01L27/07 , H01L21/8238
CPC分类号： H01L27/0629 , H01L29/0847 , H01L29/8611 , H01L29/868
摘要： An electrical circuit, planar diode, and method of forming a diode and one or more CMOS devices on the same chip. The method includes electrically isolating a portion of a substrate in a diode region from other substrate regions. The method also includes recessing the substrate in the diode region. The method further includes epitaxially forming in the diode region a first doped layer above the substrate and epitaxially forming in the diode region a second doped layer above the first doped layer.
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公开(公告)号：US08318574B2
公开(公告)日：2012-11-27
申请号：US12847208
申请日：2010-07-30
IPC分类号： H01L21/20
CPC分类号： H01L27/1203 , H01L27/10829 , H01L27/10867
摘要： In one exemplary embodiment, a semiconductor structure including: a SOI substrate having of a top silicon layer overlying an insulation layer, the insulation layer overlies a bottom silicon layer; a capacitor disposed at least partially in the insulation layer; a device disposed at least partially on the top silicon layer, where the device is coupled to a doped portion of the top silicon layer; a backside strap of first epitaxially-deposited material, at least a first portion of the backside strap underlies the doped portion of the top silicon layer, the backside strap is coupled to the doped portion of the top silicon layer at a first end of the backside strap and to the capacitor at a second end of the backside strap; and second epitaxially-deposited material that at least partially overlies the doped portion of the top silicon layer, the second epitaxially-deposited material further at least partially overlies the first portion.
摘要翻译： 在一个示例性实施例中，一种半导体结构，包括：具有覆盖绝缘层的顶部硅层的SOI衬底，所述绝缘层覆盖在底部硅层上; 至少部分地设置在绝缘层中的电容器; 至少部分地设置在所述顶部硅层上的器件，其中所述器件耦合到所述顶部硅层的掺杂部分; 第一外延沉积材料的背面带，背侧带的至少第一部分位于顶部硅层的掺杂部分的下面，背面带在背面的第一端耦合到顶部硅层的掺杂部分 带子和背部带子的第二端处的电容器; 以及至少部分地覆盖在顶部硅层的掺杂部分上的第二外延沉积材料，第二外延沉积材料还至少部分地覆盖在第一部分上。
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公开(公告)号：US20120286364A1
公开(公告)日：2012-11-15
申请号：US13104542
申请日：2011-05-10
IPC分类号： H01L27/12 , H01L21/8238
CPC分类号： H01L27/0727 , H01L21/823418 , H01L21/84 , H01L27/0629 , H01L27/1203
摘要： A method includes forming isolation regions in a semiconductor substrate to define a first field effect transistor (FET) region, a second FET region, and a diode region, forming a first gate stack in the first FET region and a second gate stack in the second FET region, forming a layer of spacer material over the second FET region and the second gate stack, forming a first source region and a first drain region in the first FET region and a first diode layer in the diode region using a first epitaxial growth process, forming a hardmask layer over the first source region, the first drain region, the first gate stack and a portion of the first diode layer, and forming a second source region and a second drain region in the first FET region and a second diode layer on the first diode layer using a second epitaxial growth process.
摘要翻译： 一种方法包括在半导体衬底中形成隔离区以限定第一场效应晶体管（FET）区域，第二FET区域和二极管区域，在第一FET区域中形成第一栅极堆叠，在第二FET区域中形成第二栅极堆叠 FET区域，在所述第二FET区域和所述第二栅极堆叠上形成间隔材料层，在所述第一FET区域中形成第一源极区域和第一漏极区域，以及使用第一外延生长工艺在所述二极管区域中形成第一二极管层 在所述第一源极区域，所述第一漏极区域，所述第一栅极堆叠层和所述第一二极管层的一部分上形成硬掩模层，以及在所述第一FET区域中形成第二源极区域和第二漏极区域，以及在所述第一FET区域中形成第二二极管层 使用第二外延生长工艺在第一二极管层上。
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5.发明申请STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER 有权具有单个间距的垂直源/源压应力的应变薄体CMOS器件公开(公告)号：US20120261757A1
公开(公告)日：2012-10-18
申请号：US13531053
申请日：2012-06-22
IPC分类号： H01L29/78 , H01L27/092
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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公开(公告)号：US20120235239A1
公开(公告)日：2012-09-20
申请号：US13049491
申请日：2011-03-16
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/26586 , H01L21/823814 , H01L21/823878 , H01L29/7839
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate, forming a raised source region over the semiconductor substrate adjacent a source side of the gate structure, and forming silicide contacts on the raised source region, on the patterned gate structure, and on the semiconductor substrate adjacent a drain side of the gate structure. Thereby, a hybrid field effect transistor (FET) structure having a drain side Schottky contact and a raised source side ohmic contact is defined.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化的栅极结构，在邻近栅极结构的源极侧的半导体衬底上形成凸起的源极区域，并在图案化的栅极上形成凸起的源极区域上的硅化物接触 并且在与栅极结构的漏极侧相邻的半导体衬底上。 因此，限定了具有漏极侧肖特基接触和升高的源极侧欧姆接触的混合场效应晶体管（FET）结构。
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公开(公告)号：US20120049284A1
公开(公告)日：2012-03-01
申请号：US12861976
申请日：2010-08-24
IPC分类号： H01L27/12 , H01L21/336
CPC分类号： H01L27/1211 , H01L27/1203
摘要： In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where the first portion has a first thickness, a first width and a first depth; and at least one second device at least partially overlying and disposed upon a second portion of the top semiconductor layer, where the second portion has a second thickness, a second width and a second depth, where at least one of the following holds: the first thickness is greater than the second thickness, the first width is greater than the second width and the first depth is greater than the second depth.
摘要翻译： 在一个示例性实施例中，半导体结构包括：绝缘体上半导体衬底，具有覆盖绝缘层的顶部半导体层，绝缘层覆盖在底部衬底层上; 至少一个第一装置至少部分地覆盖并设置在顶部半导体层的第一部分上，其中第一部分具有第一厚度，第一宽度和第一深度; 以及至少一个第二装置，其至少部分地覆盖并设置在顶部半导体层的第二部分上，其中第二部分具有第二厚度，第二宽度和第二深度，其中以下至少一个成立：第一 厚度大于第二厚度，第一宽度大于第二宽度，第一深度大于第二深度。
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8.发明申请STRAINED THIN BODY CMOS DEVICE HAVING VERTICALLY RAISED SOURCE/DRAIN STRESSORS WITH SINGLE SPACER 有权具有单个间距的垂直源/源压应力的应变薄体CMOS器件公开(公告)号：US20110309446A1
公开(公告)日：2011-12-22
申请号：US12816399
申请日：2010-06-16
IPC分类号： H01L27/12 , H01L21/8238 , H01L29/786 , H01L21/336
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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公开(公告)号：US09054211B2
公开(公告)日：2015-06-09
申请号：US13540801
申请日：2012-07-03
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/8238 , H01L29/66 , H01L29/78
CPC分类号： H01L21/823431 , H01L21/823412 , H01L21/823807 , H01L21/823821 , H01L29/66795 , H01L29/7843 , H01L29/7846 , H01L29/785
摘要： An FET device structure has a Fin-FET device with a fin of a Si based material. An oxide element is abutting the fin and exerts pressure onto the fin. The Fin-FET device channel is compressively stressed due to the pressure on the fin. A further FET device structure has Fin-FET devices in a row. An oxide element extending perpendicularly to the row of fins is abutting the fins and exerts pressure onto the fins. Device channels of the Fin-FET devices are compressively stressed due to the pressure on the fins.
摘要翻译： FET器件结构具有具有Si基材料的翅片的Fin-FET器件。 氧化物元件邻接翅片并对翅片施加压力。 Fin-FET器件通道由于鳍上的压力而受到压缩应力。 另外的FET器件结构具有Fin-FET器件。 垂直于翅片排延伸的氧化物元件邻接散热片并对翅片施加压力。 Fin-FET器件的器件通道由于鳍片上的压力而受到压缩应力。
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10.发明授权Strained thin body CMOS device having vertically raised source/drain stressors with single spacer 有权应变的薄体CMOS器件具有单个间隔物的垂直升高的源/漏应力源公开(公告)号：US08546228B2
公开(公告)日：2013-10-01
申请号：US12816399
申请日：2010-06-16
IPC分类号： H01L21/336
CPC分类号： H01L29/66477 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L29/66628 , H01L29/66772 , H01L29/7848 , H01L29/78618
摘要： A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate; forming a spacer layer over the semiconductor substrate and patterned gate structure; removing horizontally disposed portions of the spacer layer so as to form a vertical sidewall spacer adjacent the patterned gate structure; and forming a raised source/drain (RSD) structure over the semiconductor substrate and adjacent the vertical sidewall spacer, wherein the RSD structure has a substantially vertical sidewall profile so as to abut the vertical sidewall spacer and produce one of a compressive and a tensile strain on a channel region of the semiconductor substrate below the patterned gate structure.
摘要翻译： 一种形成晶体管器件的方法包括在半导体衬底上形成图案化栅极结构; 在半导体衬底上形成间隔层和图案化栅极结构; 去除间隔层的水平设置部分，以形成邻近图案化栅极结构的垂直侧壁间隔物; 以及在所述半导体衬底上并且邻近所述垂直侧壁间隔物形成升高的源极/漏极（RSD）结构，其中所述RSD结构具有基本上垂直的侧壁轮廓，以便邻接所述垂直侧壁间隔物并产生压缩和拉伸应变之一 在图案化的栅极结构下方的半导体衬底的沟道区上。
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