公开(公告)号：US20060094238A1

公开(公告)日：2006-05-04

申请号：US11305368

申请日：2005-12-16

申请人： Karl Levy ,  Junghwan Sung ,  Kaihan Ashtiani ,  James Fair ,  Joshua Collins ,  Juwen Gao

发明人： Karl Levy ,  Junghwan Sung ,  Kaihan Ashtiani ,  James Fair ,  Joshua Collins ,  Juwen Gao

IPC分类号： H01L21/44

CPC分类号： C23C16/4554 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76843

摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

公开(公告)号：US20050031786A1

公开(公告)日：2005-02-10

申请号：US10649351

申请日：2003-08-26

申请人： Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

发明人： Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

IPC分类号： H01L21/283 ,  H01L21/285 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/28562 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  Y10S438/902

摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

摘要翻译： 通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。 该方法的每个循环提供了一个或多个钨膜的单层。 该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

公开(公告)号：US07262125B2

公开(公告)日：2007-08-28

申请号：US10815560

申请日：2004-03-31

申请人： Panya Wongsenakhum ,  Aaron R. Fellis ,  Kaihan A. Ashtiani ,  Karl B. Levy ,  Juwen Gao ,  Joshua Collins ,  Junghwan Sung ,  Lana Hiului Chan

发明人： Panya Wongsenakhum ,  Aaron R. Fellis ,  Kaihan A. Ashtiani ,  Karl B. Levy ,  Juwen Gao ,  Joshua Collins ,  Junghwan Sung ,  Lana Hiului Chan

IPC分类号： H01L21/4763

CPC分类号： C23C16/45523 ,  C23C16/0281 ,  C23C16/08 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

摘要： Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.

摘要翻译： 提供了在基板上制备低电阻率钨膜的方法和装置。 方法包括使用脉冲成核层（PNL）技术在衬底上形成钨成核层并在其上沉积体钨层。 用于形成钨成核层的方法包括使用含硼物质，含钨前体和任选的硅烷。 所描述的方法对于需要薄的低电阻率薄膜（例如互连应用）的应用特别有用。

公开(公告)号：US07141494B2

公开(公告)日：2006-11-28

申请号：US10649351

申请日：2003-08-26

申请人： Sang-Hyeob Lee ,  Karl B. Levy ,  Aaron R. Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan A. Ashtiani ,  Junghwan Sung ,  Lana Hiului Chan

发明人： Sang-Hyeob Lee ,  Karl B. Levy ,  Aaron R. Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan A. Ashtiani ,  Junghwan Sung ,  Lana Hiului Chan

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/28562 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  Y10S438/902

摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

摘要翻译： 通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。 该方法的每个循环提供了一个或多个钨膜的单层。 该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

公开(公告)号：US07005372B2

公开(公告)日：2006-02-28

申请号：US10690492

申请日：2003-10-20

申请人： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

发明人： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

IPC分类号： H01L21/4763

CPC分类号： C23C16/4554 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76843

摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

摘要翻译： 描述了用于沉积氮化钨层的方法。 该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。 最初，在衬底表面上形成钨层。 然后将钨层暴露于氮化剂以形成氮化钨层。 形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。 在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

公开(公告)号：US07691749B2

公开(公告)日：2010-04-06

申请号：US11305368

申请日：2005-12-16

申请人： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

发明人： Karl B. Levy ,  Junghwan Sung ,  Kaihan A. Ashtiani ,  James A. Fair ,  Joshua Collins ,  Juwen Gao

IPC分类号： H01L21/44

CPC分类号： C23C16/4554 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76843

摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

摘要翻译： 描述了用于沉积氮化钨层的方法。 该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。 最初，在衬底表面上形成钨层。 然后将钨层暴露于氮化剂以形成氮化钨层。 形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。 在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

公开(公告)号：US20080254623A1

公开(公告)日：2008-10-16

申请号：US12030645

申请日：2008-02-13

申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

IPC分类号： H01L21/44

CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得大约14微米的电阻率。

公开(公告)号：US08409985B2

公开(公告)日：2013-04-02

申请号：US13095734

申请日：2011-04-27

申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

IPC分类号： H01L21/4763

CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

公开(公告)号：US07955972B2

公开(公告)日：2011-06-07

申请号：US12030645

申请日：2008-02-13

申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

IPC分类号： H01L21/4763

CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

公开(公告)号：US20110223763A1

公开(公告)日：2011-09-15

申请号：US13095734

申请日：2011-04-27

申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

IPC分类号： H01L21/768

CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。