公开(公告)号：US08578879B2

公开(公告)日：2013-11-12

申请号：US12511377

申请日：2009-07-29

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Kenneth S. Collins ,  Lawrence Wong ,  Samer Banna ,  Andrew Nguyen

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01P7/04 ,  H01P7/06

CPC分类号： H01P7/04

摘要： Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

摘要翻译： 本文提供了阻抗匹配网络的实施例。 在一些实施例中，阻抗匹配网络可以包括具有内部和外部导体的同轴谐振器。 可以提供调谐电容器以可变地控制同轴谐振器的谐振频率。 调谐电容器可以由第一调谐电极和第二调谐电极和中间电介质形成，其中第一调谐电极由内部导体的一部分形成。 可以提供负载电容器，用于可变地耦合从内部导体到负载的能量。 负载电容器可以由内部导体，可调负载电极和中间电介质形成。

公开(公告)号：US20110005685A1

公开(公告)日：2011-01-13

申请号：US12501966

申请日：2009-07-13

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

IPC分类号： C23F1/08 ,  C23C16/503

CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

公开(公告)号：US08360003B2

公开(公告)日：2013-01-29

申请号：US12501966

申请日：2009-07-13

申请人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

发明人： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

摘要翻译： 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

公开(公告)号：US08299391B2

公开(公告)日：2012-10-30

申请号：US12182342

申请日：2008-07-30

申请人： Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

发明人： Valentin N. Todorow ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321

摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

摘要翻译： 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

公开(公告)号：US20100025384A1

公开(公告)日：2010-02-04

申请号：US12182342

申请日：2008-07-30

申请人： VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

发明人： VALENTIN N. TODOROW ,  Samer Banna ,  Kartik Ramaswamy ,  Michael D. Willwerth

IPC分类号： B23K9/02 ,  B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/321

摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.

摘要翻译： 本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中， 或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。 在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

公开(公告)号：US08974684B2

公开(公告)日：2015-03-10

申请号：US13458191

申请日：2012-04-27

申请人： Samer Banna ,  Ankur Agarwal

发明人： Samer Banna ,  Ankur Agarwal

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/311

CPC分类号： H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

摘要： Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first frequency and a first duty cycle; applying only a second RF signal to bias the plasma towards the substrate, wherein the second RF signal has the first frequency and a second duty cycle different than the first duty cycle; adjusting a phase variance between the first and second RF signals to control an ion energy distribution in the plasma; and etching the substrate with the plasma.

摘要翻译： 本发明提供蚀刻基板的方法。 在一些实施例中，蚀刻衬底的方法可以包括通过仅提供具有第一频率和第一占空比的第一RF信号来产生等离子体; 仅施加第二RF信号以将等离子体偏置到衬底，其中第二RF信号具有与第一占空比不同的第一频率和第二占空比; 调整第一和第二RF信号之间的相位差以控制等离子体中的离子能量分布; 并用等离子体蚀刻衬底。

公开(公告)号：US09287147B2

公开(公告)日：2016-03-15

申请号：US13827687

申请日：2013-03-14

申请人： Kyle Tantiwong ,  Samer Banna

发明人： Kyle Tantiwong ,  Samer Banna

IPC分类号： H01L21/683 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67109 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68785

摘要： Embodiments of the present invention generally provide an apparatus with a recess and a cavity formed therein for future hardware retrofit and uniformity enhancement and methods for controlling the same. In one embodiment, a substrate support includes a supporting body having an outer wall, a ground path disposed against and bounding the outer wall of the supporting body, a mounting plate coupled to a lower surface of the supporting body, wherein the mounting plate includes a lip extending outward from the mounting plate defining an upper surface; and a recess formed at a perimeter of the supporting body above the upper surface of the lip of the mounting plate, the recess lining on the ground path extending at least partially to the mounting plate.

摘要翻译： 本发明的实施例通常提供一种装置，其具有形成在其中以用于将来的硬件改进和均匀性增强的凹部和空腔以及用于控制它的方法。 在一个实施例中，衬底支撑件包括支撑体，其具有外壁，抵靠并限制支撑体的外壁的接地路径;联接到支撑体的下表面的安装板，其中安装板包括： 嘴唇，其从安装板向外延伸，限定上表面; 以及在所述安装板的唇缘的上表面上方的所述支撑体的周边处形成的凹部，所述接地路径上的所述凹陷衬垫至少部分地延伸到所述安装板。

公开(公告)号：US08368308B2

公开(公告)日：2013-02-05

申请号：US12717358

申请日：2010-03-04

申请人： Samer Banna ,  Valentin N. Todorow

发明人： Samer Banna ,  Valentin N. Todorow

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01L21/67069

摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

摘要翻译： 本发明的实施例通常提供一种电感耦合等离子体（ICP）反应器，其具有能够控制ICP源（第一RF源）和衬底偏压（第二RF源）之间的RF相位差的衬底RF偏压， 用于半导体工业中使用的等离子体处理反应堆。 RF相位差的控制为精细的过程调整提供了一个强大的旋钮。 例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自DC偏置控制和 室匹配。

公开(公告)号：US08937800B2

公开(公告)日：2015-01-20

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

IPC分类号： H02N13/00 ,  H01L21/67

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US20130279066A1

公开(公告)日：2013-10-24

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

IPC分类号： H02N13/00

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。