公开(公告)号：US20050037604A1

公开(公告)日：2005-02-17

申请号：US10949837

申请日：2004-09-24

申请人： Katherina Babich ,  Roy Carruthers ,  Timothy Dalton ,  Alfred Grill ,  Jeffrey Hedrick ,  Christopher Jahnes ,  Ebony Mays ,  Laurent Perraud ,  Sampath Purushothaman ,  Katherine Saenger

发明人： Katherina Babich ,  Roy Carruthers ,  Timothy Dalton ,  Alfred Grill ,  Jeffrey Hedrick ,  Christopher Jahnes ,  Ebony Mays ,  Laurent Perraud ,  Sampath Purushothaman ,  Katherine Saenger

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/7681 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

摘要翻译： 描述了一种新颖的含气隙的互连布线结构，其在通孔级中结合有固体低k电介质，并且在布线层中结合了复合固体和气隙电介质。 还提供了形成这种互连结构的方法。 该方法很容易扩展到包含多个布线级别的互连结构，并且与双镶嵌后端（BEOL）处理兼容。

公开(公告)号：US06448655B1

公开(公告)日：2002-09-10

申请号：US09067439

申请日：1998-04-28

申请人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

发明人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

IPC分类号： H01L2348

CPC分类号： H01L21/76825 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

摘要翻译： 描述了在含氟电介质中提供基本上较低氟含量的区域的方法，其包括将区域暴露于紫外线辐射并在升高的温度下退火以从该区域去除部分被破坏的氟。 本发明克服了与含氟介质与其他材料反应的氟的问题，同时保持足够高或原始氟含量的体电介质材料，以保持半导体芯片布线互连结构中有效的低介电常数。

公开(公告)号：US06759321B2

公开(公告)日：2004-07-06

申请号：US10205526

申请日：2002-07-25

申请人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

发明人： Katherina Babich ,  Alessandro Callegari ,  Stephen Alan Cohen ,  Alfred Grill ,  Christopher Vincent Jahnes ,  Vishnubhai Vitthalbhai Patel ,  Sampath Purushothaman ,  Katherine Lynn Saenger

IPC分类号： H01L214763

CPC分类号： H01L21/76825 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/76814 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

摘要翻译： 描述了在含氟电介质中提供基本上较低氟含量的区域的方法，其包括将区域暴露于紫外线辐射并在升高的温度下退火以从该区域去除部分被破坏的氟。 本发明克服了与含氟介质与其他材料反应的氟的问题，同时保持足够高或原始氟含量的体电介质材料，以保持半导体芯片布线互连结构中有效的低介电常数。

公开(公告)号：US20050064322A1

公开(公告)日：2005-03-24

申请号：US10666541

申请日：2003-09-19

申请人： Katherina Babich ,  Alfred Grill ,  Arpan Mahorowala ,  Dirk Pfeiffer

发明人： Katherina Babich ,  Alfred Grill ,  Arpan Mahorowala ,  Dirk Pfeiffer

IPC分类号： G03C1/76 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/16

CPC分类号： G03F7/11 ,  G03F7/075 ,  G03F7/091 ,  G03F7/167

摘要： A multilayer lithographic structure which includes a substrate, having on a major surface thereof a first layer including a water and/or aqueous base soluble material which includes Ge, O, and H, and optionally X, wherein X is at least one of Si, N, and F; and disposed on the first layer a second layer which includes an energy photoactive material.

摘要翻译： 一种多层光刻结构，其包括基底，其主要表面上具有第一层，该第一层包括水和/或水溶性基质可溶性材料，其包括Ge，O和H以及任选的X，其中X是Si， N和F; 并且在第一层上设置包括能量光活性材料的第二层。

公开(公告)号：US06514667B2

公开(公告)日：2003-02-04

申请号：US09932002

申请日：2001-08-17

申请人： Marie Angelopoulos ,  Katherina Babich ,  Alfred Grill ,  Scott David Halle ,  Arpan Pravin Mahorowala ,  Vishnubhai Vitthalbhai Patel

发明人： Marie Angelopoulos ,  Katherina Babich ,  Alfred Grill ,  Scott David Halle ,  Arpan Pravin Mahorowala ,  Vishnubhai Vitthalbhai Patel

IPC分类号： G03F7075

CPC分类号： H01L21/3122 ,  C23C16/30 ,  C23C16/32 ,  C23C16/325 ,  G03F7/091 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

公开(公告)号：US06316167B1

公开(公告)日：2001-11-13

申请号：US09480442

申请日：2000-01-10

申请人： Marie Angelopoulos ,  Katherina Babich ,  Alfred Grill ,  Scott David Halle ,  Arpan Pravin Mahorowala ,  Vishnubhai Vitthalbhai Patel

发明人： Marie Angelopoulos ,  Katherina Babich ,  Alfred Grill ,  Scott David Halle ,  Arpan Pravin Mahorowala ,  Vishnubhai Vitthalbhai Patel

IPC分类号： G03F726

CPC分类号： H01L21/3122 ,  C23C16/30 ,  C23C16/32 ,  C23C16/325 ,  G03F7/091 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76832 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

摘要翻译： 一种光刻结构及其制造方法，其具有多个层，其中至少一层是包含具有结构式R：C：H：X的材料的RCHX层，其中R选自Si ，Ge，B，Sn，Fe，Ti及其组合，其中X不存在或选自O，N，S和F中的一种或多种，​​以及能量活性材料层。 RCHX层可用作硬掩模层，防反射层和硬掩模抗反射层。 可以通过图案化能量活性材料并将图案转移到RCHX层来蒸镀和图案化RCHX层。

公开(公告)号：US09059000B2

公开(公告)日：2015-06-16

申请号：US12106586

申请日：2008-04-21

申请人： Deok-kee Kim ,  Kenneth T. Settlemyer, Jr. ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl J. Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan P. Mahorowala ,  Harald Okorn-Schmidt

发明人： Deok-kee Kim ,  Kenneth T. Settlemyer, Jr. ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl J. Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan P. Mahorowala ,  Harald Okorn-Schmidt

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  G03F7/11

CPC分类号： H01L21/0337 ,  G03F7/11 ,  H01L21/027 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0338 ,  H01L21/31144

摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

公开(公告)号：US20050255386A1

公开(公告)日：2005-11-17

申请号：US10709514

申请日：2004-05-11

申请人： Deok-kee Kim ,  Kenneth Settlemyer ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan Mahorowala ,  Harald Okorn-Schmidt

发明人： Deok-kee Kim ,  Kenneth Settlemyer ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan Mahorowala ,  Harald Okorn-Schmidt

IPC分类号： G03C5/00 ,  G03F7/11 ,  G03F9/00 ,  H01L21/033 ,  H01L21/311 ,  H01L21/331

CPC分类号： H01L21/0337 ,  G03F7/11 ,  H01L21/027 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0338 ,  H01L21/31144

摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

摘要翻译： 增加对芯片区域的保护是通过在半导体制造工艺方面具有增强的鲁棒性的掩模结构来提供的，或者可以以相对于下面的材料或两者的增加的选择性和可控性被去除。 提供掩模结构，其显示化学反应，颗粒或材料类型的界面，其可被利用以增强任一种或两种类型的保护。 这种掩模的结构包括TERA材料，其可以使用氟化氢和吸湿性酸或有机溶剂的混合物以及相似或不同材料的两层结构进行转化或水合并选择性蚀刻。

公开(公告)号：US07497959B2

公开(公告)日：2009-03-03

申请号：US10709514

申请日：2004-05-11

申请人： Deok-kee Kim ,  Kenneth T. Settlemyer, Jr. ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl J. Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan P. Mahorowala ,  Harald Okorn-Schmidt

发明人： Deok-kee Kim ,  Kenneth T. Settlemyer, Jr. ,  Kangguo Cheng ,  Ramachandra Divakaruni ,  Carl J. Radens ,  Dirk Pfeiffer ,  Timothy Dalton ,  Katherina Babich ,  Arpan P. Mahorowala ,  Harald Okorn-Schmidt

IPC分类号： H01B3/00 ,  H01L21/31 ,  H01L49/00

CPC分类号： H01L21/0337 ,  G03F7/11 ,  H01L21/027 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0338 ,  H01L21/31144

摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

摘要翻译： 增加对芯片区域的保护是通过在半导体制造工艺方面具有增强的鲁棒性的掩模结构来提供的，或者可以以相对于下面的材料或两者的增加的选择性和可控性被去除。 提供掩模结构，其显示化学反应，颗粒或材料类型的界面，其可被利用以增强任一种或两种类型的保护。 这种掩模的结构包括TERA材料，其可以使用氟化氢和吸湿性酸或有机溶剂的混合物以及相似或不同材料的两层结构进行转化或水合并选择性蚀刻。

公开(公告)号：US07998871B2

公开(公告)日：2011-08-16

申请号：US12145915

申请日：2008-06-25

申请人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

发明人： Katherina Babich ,  Todd C. Bailey ,  Richard A. Conti ,  Ryan P. Deschner

IPC分类号： H01L21/302

CPC分类号： H01L21/266 ,  H01L21/26513 ,  Y10T428/24992

摘要： Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: depositing an implant stopping layer over the substrate; depositing a photoresist over the implant stopping layer, the implant stopping layer having a density greater than the photoresist; forming a pattern in the photoresist by removing a portion of the photoresist to expose the implant stopping layer; and transferring the pattern into the implant stopping layer by etching to form the mask. The implant stopping layer may include: hydrogenated germanium carbide, nitrogenated germanium carbide, fluorinated germanium carbide, and/or amorphous germanium carbon hydride (GeHX), where X includes carbon. The methods/mask reduce scattering during implanting because the mask has higher density than conventional masks.

摘要翻译： 形成用于植入衬底的掩模和使用具有光刻胶的注入阻挡层进行植入的方法提供了较低的纵横比掩模，其在去除掩模期间对衬底中的沟槽隔离造成最小的损害。 在一个实施例中，形成掩模的方法包括：在衬底上沉积注入阻挡层; 在所述注入阻挡层上沉积光致抗蚀剂，所述注入阻挡层的密度大于所述光致抗蚀剂; 通过去除光致抗蚀剂的一部分以暴露植入物停止层，在光致抗蚀剂中形成图案; 并通过蚀刻将图案转移到植入物停止层中以形成掩模。 注入停止层可以包括：氢化碳化锗，氮化碳化锗，氟化锗碳化物和/或无定形锗碳氢化物（GeHX），其中X包括碳。 方法/掩模减少了植入过程中的散射，因为掩模具有比常规掩模更高的密度。