摘要:
A hinge mechanism in which two housings are respectively connected to a first rotation shaft and a second rotation shaft that are arranged perpendicular to each other and the housing are arbitrarily openable about either one of the shafts is provided. In the hinge mechanism 1, at an end of a rotation shaft holding section (4) of a hinge housing (1), an end of an opening and closing shaft holding section (5) is integrated together in a state of being perpendicular to each other, the rotation shaft holding section (4) being formed in it a tubular shaft hole for supporting a rotation shaft section (3), and the opening and closing shaft holding section (5) being formed in it a tubular shaft hole for supporting an opening and closing shaft section (2), and the hinge housing (1) is substantially L-shaped as a whole. When the opening and closing shaft (2) is rotated, an opening and closing limiting outer peripheral surface enters an escape recess to cause a restraining end section to be restrained by the opening and closing limiting outer peripheral surface, and as a result, rotation of the rotation shaft section (3) is restrained. When the rotation shaft section (3) is rotated, a rotation limiting outer peripheral surface of the rotation shaft section (3) enters a portion of a restraining end surface to cause rotation of the opening and closing shaft (2) to be restrained.
摘要:
A hinge mechanism in which two housings are respectively connected to a first rotation shaft and a second rotation shaft that are arranged perpendicular to each other and the housing are arbitrarily openable about either one of the shafts is provided. In the hinge mechanism 1, at an end of a rotation shaft holding section (4) of a hinge housing (1), an end of an opening and closing shaft holding section (5) is integrated together in a state of being perpendicular to each other, the rotation shaft holding section (4) being formed in it a tubular shaft hole for supporting a rotation shaft section (3), and the opening and closing shaft holding section (5) being formed in it a tubular shaft hole for supporting an opening and closing shaft section (2), and the hinge housing (1) is substantially L-shaped as a whole. When the opening and closing shaft (2) is rotated, an opening and closing limiting outer peripheral surface enters an escape recess to cause a restraining end section to be restrained by the opening and closing limiting outer peripheral surface, and as a result, rotation of the rotation shaft section (3) is restrained. When the rotation shaft section (3) is rotated, a rotation limiting outer peripheral surface of the rotation shaft section (3) enters a portion of a restraining end surface to cause rotation of the opening and closing shaft (2) to be restrained.
摘要:
A single-shaft semi-automatic hinge, wherein a first cam and a second cam fitted on the single shaft of the hinge passing therethrough are abutted on each other with pressure application by an elastic member, thereby generating a rotational friction torque; a region of the first cam and the second cam in which a liquid crystal portion can rotate from a state in which a main body portion and the liquid crystal portion are folded to a fully open state is set narrower than a region in which the hinge can rotate.
摘要:
Provided is a method for producing a chlorogenic acids composition having a reduced caffeine content and good taste and favor, capable of efficiently recovering high purity of chlorogenic acids from a chlorogenic acids-containing composition. The method for producing a purified chlorogenic acids composition comprises a step A of bringing a chlorogenic acids-containing composition into contact with a cation exchange resin; a step B of bringing the liquid obtained in the step A into contact with an anion exchange resin; and a step C of bringing an eluent into contact with the anion exchange resin after the step B.
摘要:
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:通过使用含有至少一些铟的(Al,In,Ga)N成核层,通过金属有机化学气相沉积(MOCVD)增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地,该方法包括将衬底装载到反应器中,在氮气和/或氢气和/或氨气流下加热衬底,在加热衬底上沉积In x Ga 1-x N成核层,在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层,并在氮气过压下冷却该衬底。
摘要:
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译:在图案化衬底上的氮化物发光二极管,包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层,其中0
摘要:
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
摘要翻译:(Al,In,Ga,B)N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2 O 4尖晶石衬底miscut上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态,导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子,例如Zn或C。
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要:
In a fuel cell system in which load electric power is supplied from a fuel cell and a secondary battery, intermittent operation is performed, that is, operation of the fuel cell is stopped and the load electric power is supplied from the secondary battery in a low load region. At this time, a threshold value for stopping and starting the operation of the fuel cell is adjusted according to open circuit voltage. Thus, it is possible to prevent fuel from being unnecessarily consumed in order to maintain the open circuit voltage at a predetermined value when the operation of the fuel cell is stopped, and to improve response of the fuel cell when the operation of the fuel cell is restarted after the open circuit voltage has decreased in the fuel cell that has stopped generating electric power.
摘要:
A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 μm≧W2≧60 μm are satisfied.