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11 条记录 (耗时 0.016 秒)

    Lithium oxide based amorphous material and process for preparation thereof
    1.
    发明授权
    Lithium oxide based amorphous material and process for preparation thereof 失效
    氧化锂基无定形材料及其制备方法

    公开(公告)号：US4390460A

    公开(公告)日：1983-06-28

    申请号：US306600

    申请日：1981-09-28

    申请人： Katsuki Miyauchi ,  Tetsu Oi ,  Tsuneo Suganuma

    发明人： Katsuki Miyauchi ,  Tetsu Oi ,  Tsuneo Suganuma

    IPC分类号： C03C3/062 ,  C03C3/097 ,  C03C4/14 ,  C03C4/18 ,  G02F1/15 ,  H01B1/06 ,  H01M6/18

    CPC分类号： G02F1/1525 ,  C03C3/097 ,  C03C4/18 ,  H01M6/18 ,  H01M6/185

    摘要： Disclosed is a lithium oxide based amorphous material having a composition included in a region defined by lines connecting points A, B, C and D in the composition diagram of the ternary system of Li.sub.2 O.SiO.sub.2.P.sub.2 O.sub.5 shown in FIG. 1 of the accompanying drawings. This amorphous material can be formed by performing sputtering by using as a target a mixture of a lithium silicate/lithium phosphate composition and LiO.sub.2. This amorphous material is excellent in the ionic conductivity.

    摘要翻译： 公开了一种氧化锂基非晶材料，其组成包括在图3所示的Li 2 O·SiO 2·P 2 O 5的三元体系的组成图中由连接点A，B，C和D的线所限定的区域中。 附图1。 可以通过使用硅酸锂/磷酸锂组合物和LiO 2的混合物作为靶来进行溅射来形成该非晶材料。 该无定形材料的离子导电性优异。

    Method for growing a pipe-shaped single crystal
    3.
    发明授权
    Method for growing a pipe-shaped single crystal 失效
    生长管状单晶的方法

    公开(公告)号：US4323418A

    公开(公告)日：1982-04-06

    申请号：US092671

    申请日：1979-11-09

    申请人： Toshio Kobayashi ,  Tetsu Oi

    发明人： Toshio Kobayashi ,  Tetsu Oi

    IPC分类号： C30B13/00 ,  C30B13/18 ,  C30B13/20 ,  C30B15/24

    CPC分类号： C30B13/18 ,  Y10S117/90 ,  Y10T117/104

    摘要： A susceptor made of a conductive material which has a melting point higher than that of a starting material and which does not react with the melt of the starting material is heated to a temperature not lower than the melting point of the starting material by the radio frequency induction heating. The starting material is fed onto the upper surface of the heated susceptor at a predetermined rate so as to melt the starting material, the resultant melt of the starting material is caused to flow from the upper surface of the susceptor via the susceptor to the lower surface thereof, the melt is crystallized in touch with a seed crystal arranged on the lower surface in advance, and the seed crystal is transferred downwards, whereby a single crystal is grown.With this method, a large-sized single crystal of an insulator or a semiconductor can be readily produced, and besides a round rod-shaped single crystal, a prism-shaped or pipe-shaped single crystal can be obtained with its sectional dimensions fluctuating little.

    摘要翻译： 由导电材料制成的感受器，其熔点高于起始材料的熔点，并且不与起始材料的熔体反应，通过射频加热至不低于原料熔点的温度 感应加热。 以预定的速率将起始材料以预定的速率供给到加热的基座的上表面上，以使原料熔化，使原料的所得熔体从基座的上表面经由基座流到下表面 预先将熔融物与布置在下表面上的晶种接触结晶，并将晶种向下转移，从而生长单晶。 通过这种方法，可以容易地制造绝缘体或半导体的大尺寸单晶，除了圆棒状单晶之外，也可以获得棱柱状或管状的单晶，其截面尺寸变小 。

    Method for fabrication of rear chip for hall effect magnetic head
    4.
    发明授权
    Method for fabrication of rear chip for hall effect magnetic head 失效
    霍尔效应磁头后置芯片的制造方法

    公开(公告)号：US4186481A

    公开(公告)日：1980-02-05

    申请号：US939210

    申请日：1978-09-05

    申请人： Takaharu Noguchi ,  Takao Ketori ,  Kohji Tamura ,  Tetsu Oi ,  Yutaka Miyoshi

    发明人： Takaharu Noguchi ,  Takao Ketori ,  Kohji Tamura ,  Tetsu Oi ,  Yutaka Miyoshi

    IPC分类号： G11B5/133 ,  G11B5/37 ,  G11B5/42

    CPC分类号： G11B5/376 ,  G11B5/1335 ,  Y10T29/49048 ,  Y10T29/49055

    摘要： A method for fabricating a rear core for the magnetic circuit of a Hall effect magnetic head is disclosed. The bottom size of the rear core protrusion is made substantially equal to the size of a Hall element. A gap is provided between the Hall element and the rear core. In order to minimize the gap, the rear core block is provided with supports for fabrication, whereby the gap between the Hall element and the bottom protrusion of the rear core is positioned accurately. The supports are removed at the end of fabrication. The bottom protrusion of the rear core prevented pressure from being applied to the Hall element, thus improving the sensitivity of the Hall effect magnetic head without increasing noises.

    摘要翻译： 公开了一种用于制造用于霍尔效应磁头的磁路的后芯的方法。 后芯突起的底部尺寸基本上等于霍尔元件的尺寸。 在霍尔元件和后芯之间提供间隙。 为了最小化间隙，后芯块设置有用于制造的支撑件，由此霍尔元件和后芯的底部突出部之间的间隙被精确地定位。 在制造结束时移除支撑件。 后芯的底部突起阻止了压力施加到霍尔元件，从而提高了霍尔效应磁头的灵敏度，而没有增加噪声。

    Amorphous lithium fluoaluminate
    5.
    发明授权
    Amorphous lithium fluoaluminate 失效
    无定型氟铝酸锂

    公开(公告)号：US4367267A

    公开(公告)日：1983-01-04

    申请号：US257340

    申请日：1981-04-24

    申请人： Tetsu Oi

    发明人： Tetsu Oi

    IPC分类号： C01F7/54 ,  G02F1/15 ,  H01M6/18

    CPC分类号： G02F1/1525 ,  C01F7/54 ,  H01M6/18

    摘要： Disclosed is an amorphous substance represented by the following general formula:aLi.sub.x Na.sub.1-x F.bAlF.sub.3wherein a is a mol ratio which is a value in the range of from 0.45 to 0.7, b is a mol ratio which is a value in the range of from 0.3 to 0.55, and x is a value in the range of from 0.1 to 1.0 except the case where a is 0.5 and b is 0.5, or x is a value in the range of from 0 to 1.0 when a is 0.5 and b is 0.5.This amorphous substance is used as a solid electrolyte of an electrochromic display device or the like.

    摘要翻译： 公开了由以下通式表示的无定形物质：aLixNa1-xF.bAlF3其中a为摩尔比，其值在0.45至0.7的范围内，b为摩尔比，其值范围为 0.3〜0.55，x为0.1〜1.0的范围，除了a为0.5，b为0.5的情况下，或者x为0〜1.0的范围，a为0.5，b为0.5的情况下 。 该无定形物质用作电致变色显示装置等的固体电解质。

    Method for producing an InSb thin film
    6.
    发明授权
    Method for producing an InSb thin film 失效
    制造InSb薄膜的方法

    公开(公告)号：US4080478A

    公开(公告)日：1978-03-21

    申请号：US603529

    申请日：1975-08-11

    申请人： Naoki Yamamoto ,  Tetsu Oi ,  Kikuji Sato

    发明人： Naoki Yamamoto ,  Tetsu Oi ,  Kikuji Sato

    IPC分类号： H01L43/12 ,  C30B13/00 ,  C30B19/00 ,  H01F10/187 ,  H01F41/14 ,  H01L43/14 ,  H01F10/02

    CPC分类号： C30B29/40 ,  C30B13/00 ,  C30B19/00 ,  H01F10/187 ,  H01F41/14 ,  H01L43/14

    摘要： A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 .times. 10.sup.4 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 10.sup.2 ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.

    摘要翻译： 一种制造独特的InSb薄膜元件的方法，包括以下步骤：在绝缘材料的衬底上形成InSb多晶薄膜，在InSb薄膜上形成氧化膜，通过加热薄片 在含有1ppm至3×104ppm氧气的惰性气体的受控气体热处理气氛中，氧化膜覆盖的温度高于InSb熔点的温度，该惰性气体可以通过加入十倍量的 水蒸汽至102ppm的氧气，并冷却所得元件。 以这种方式制造的InSb薄膜元件适用于具有良好性能，特别是低噪声水平或高S / N比的磁敏元件的材料。

    Semiconductor magnetic head
    7.
    发明授权
    Semiconductor magnetic head 失效
    半导体磁头

    公开(公告)号：US3943570A

    公开(公告)日：1976-03-09

    申请号：US505972

    申请日：1974-09-13

    申请人： Naoki Yamamoto ,  Kikuji Sato ,  Tetsu Oi

    发明人： Naoki Yamamoto ,  Kikuji Sato ,  Tetsu Oi

    IPC分类号： G11B5/37 ,  G11B5/39 ,  H01F10/187 ,  G11B5/38 ,  G01R33/02

    CPC分类号： G11B5/3993 ,  G11B5/376 ,  H01F10/187

    摘要： A semiconductor magnetic head in which a polycrystal thin film of a semiconductor material containing at least a crystal particle having a longitudinal diameter of at least 30 .mu.m is employed as a magneto-sensitive element is disclosed. The semiconductor thin film containing the crystal particle of the longitudinal diameter at least 30 .mu.m can be easily formed with a good reproducibility by evaporating the semiconductor material on an insulation film containing not less than 3 mol % of alumina and then being subjected to a zone melting treatment.

    摘要翻译： 公开了一种半导体磁头，其中至少含有具有至少30μm的纵向直径的晶体的半导体材料的多晶薄膜被用作磁敏元件。 含有至少30μm的纵向直径的晶体颗粒的半导体薄膜可以通过在含有不少于3mol％的氧化铝的绝缘膜上蒸发半导体材料然后经受一个区域而容易地形成具有良好的再现性 熔化处理。

    Method and apparatus for laser zone melting
    10.
    发明授权
    Method and apparatus for laser zone melting 失效
    激光区域熔化的方法和装置

    公开(公告)号：US4177372A

    公开(公告)日：1979-12-04

    申请号：US799928

    申请日：1977-05-24

    申请人： Nobuo Kotera ,  Tetsu Oi ,  Takashi Nishida

    发明人： Nobuo Kotera ,  Tetsu Oi ,  Takashi Nishida

    IPC分类号： C30B13/00 ,  C30B13/24 ,  C30B13/28 ,  C30B29/40 ,  H01L21/208 ,  H01L21/268 ,  H01L43/12 ,  H01S3/131 ,  B23K9/00

    CPC分类号： C30B13/24 ,  C30B13/00 ,  C30B29/60 ,  Y10S117/904 ,  Y10S148/09

    摘要： A method for laser zone melting and apparatuses therefor wherein, in a zone melting method for a thin film due to the irradiation of laser beam, the laser beam is vibrated at the frequency of more than 1 Hz in the direction substantially perpendicular to the moving direction of a melting zone and the fluctuation of laser beam output is controlled to less than 1%. The zone-melted thin films manufactured by this method have good electrical properties resulting from less crystal imperfection, less non-stoichiometric excess atoms of the constituents, and less thickness corrugation of the film due to the suppression of temperature fluctuations and its spacial inhomogeneity at the time of zone melting.

    摘要翻译： 一种用于激光区域熔化的方法及其装置，其中，在由激光束的照射引起的薄膜区域熔化方法中，激光束以大于1Hz的频率在基本上垂直于移动方向的方向上振动 的熔融区域，激光束输出的波动控制在小于1％。 通过该方法制造的区域熔融的薄膜具有良好的电性能，由于较少的晶体缺陷，较少的非化学计量的组分的原子，以及由于抑制温度波动及其空间不均匀性而导致的膜的较小厚度波纹 区域熔化时间。