利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.035 秒)

    EL SEMICONDUCTOR DEVICE
    1.
    发明申请
    EL SEMICONDUCTOR DEVICE 有权
    EL半导体器件

    公开(公告)号：US20090059985A1

    公开(公告)日：2009-03-05

    申请号：US12038062

    申请日：2008-02-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    IPC分类号： H01S5/32

    CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

    摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

    摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量 。

    EL semiconductor device
    4.
    发明授权
    EL semiconductor device 有权
    EL半导体器件

    公开(公告)号：US07899104B2

    公开(公告)日：2011-03-01

    申请号：US12038062

    申请日：2008-02-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    IPC分类号： H01S5/00

    CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

    摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

    摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，导带的底部的高能量对于抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷是有效的 。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20080247434A1

    公开(公告)日：2008-10-09

    申请号：US12059540

    申请日：2008-03-31

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura

    IPC分类号： H01S5/327

    CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/285 ,  H01S5/2231 ,  H01S5/3216 ,  H01S5/3422 ,  H01S5/347

    摘要： A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element.

    摘要翻译： 提供了能够提高p型包层的载流子浓度并提高发光效率的半导体发光装置。 半导体发光器件由II-VI族化合物半导体制成，并且半导体发光器件包括在n型覆层和p型覆层之间的有源层，其中有源层具有 II型超晶格结构，有源层与n型包覆层之间以及有源层与p型覆层之间的接合部均具有I型结构，p型包层由碲（Te） 作为第VI组元素。

    Nitride semiconductor laser and epitaxial substrate
    8.
    发明授权
    Nitride semiconductor laser and epitaxial substrate 有权
    氮化物半导体激光器和外延衬底

    公开(公告)号：US08718110B2

    公开(公告)日：2014-05-06

    申请号：US13366636

    申请日：2012-02-06

    申请人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

    发明人： Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

    IPC分类号： H01S5/00

    CPC分类号： H01S5/3201 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

    摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.

    摘要翻译： 氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。 主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。 第一p型半导体层包括包括内置各向异性应变的InAlGaN层。 第二p型半导体层包括与InAlGaN层的材料不同的半导体。 第一氮化物半导体层设置在第二p型半导体层和有源层之间。 第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

    Xanthene type acid dye and a base dye-sensitized zinc oxide photoconductive element
    9.
    发明授权
    Xanthene type acid dye and a base dye-sensitized zinc oxide photoconductive element 失效
    呫吨型酸性染料和碱性染料敏化氧化锌光电导元件

    公开(公告)号：US4200461A

    公开(公告)日：1980-04-29

    申请号：US801723

    申请日：1977-05-31

    申请人： Kohei Kiyota ,  Hiroo Ueda ,  Shunji Kitagawa ,  Kunihiko Tasai

    发明人： Kohei Kiyota ,  Hiroo Ueda ,  Shunji Kitagawa ,  Kunihiko Tasai

    IPC分类号： G03G5/087 ,  G03G5/09

    CPC分类号： G03G5/09 ,  G03G5/087

    摘要： Disclosed is a photoconductive recording element having a high photosensitivity over the entire band of visible rays which comprises an electroconductive substrate and a photoconductive layer formed on the substrate. The photoconductive layer comprises an acid dye and a basic dye both of which may be concurrently adsorbed on the outer surfaces of fine zinc oxide particles, or the acid dye of which is adsorbed on the outer surfaces of the zinc oxide particles and the basic dye of which is adsorbed on each layer of the acid dye.

    摘要翻译： 公开了一种在整个可见光带上具有高光敏性的光电导记录元件，其包括形成在基底上的导电基底和光电导层。 光电导层包括酸性染料和碱性染料，它们都可以同时吸附在氧化锌微粒的外表面上，或其酸性染料吸附在氧化锌颗粒的外表面上，碱性染料 其被吸附在酸性染料的每一层上。