公开(公告)号：US5008726A

公开(公告)日：1991-04-16

申请号：US273070

申请日：1988-11-18

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/075 ,  H01L31/1832 ,  Y02E10/548

摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZSnSe.sub.1-x Te.sub.x :H:M film, where M is a dopant of p-type or n-type: the quantitative ratio of the Se to the Te is in the range of from 1:9 to 3:7 in terms of atomic ratio: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

公开(公告)号：US4959106A

公开(公告)日：1990-09-25

申请号：US399396

申请日：1989-08-28

申请人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

发明人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

IPC分类号： H01L21/363 ,  H01L21/365 ,  H01L31/0296 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/068 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02E10/547

摘要： A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.

摘要翻译： 1.一种通过p型半导体层和n型半导体层的连接产生光电动势的光电元件，其特征在于，所述半导体层中的至少一个由锌原子，硒原子， 可选的碲原子和至少氢原子，所述沉积膜含有含有1至4原子％氢原子的p型或n型掺杂剂，其含有比例为1:9至3的硒原子和碲原子 ：7（以原子数计），并且还含有65〜85体积％的每单位体积的晶粒。

公开(公告)号：US4888062A

公开(公告)日：1989-12-19

申请号：US236792

申请日：1988-08-26

申请人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

发明人： Katsumi Nakagawa ,  Masahiro Kanai ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Tsutomu Murakami

IPC分类号： H01L31/0296 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/1828 ,  Y02E10/543

摘要： An improved pin junction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least said i-type semiconductor layer comprises a member selected from the group consisting of a ZnSe:H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and a ZnSe.sub.1-x Te.sub.x :H deposited film containing the hydrogen atoms in an amount of 1 to 4 atomic % and crystal grain domains in a proportion of 65 to 85 vol % per unit volume and also containing the selenium atoms and the tellurium atoms in a Se/Te quantitative ratio of 1:9 to 3:7.The pin junction photovoltaic element exhibits an improved photoelectric conversion efficiency for short-wavelength light and has a high open-circuit voltage. The pin junction photovoltaic element does not exhibit any undesirable light-induced fatigue even upon continuous use for a long period of time.

公开(公告)号：US5028488A

公开(公告)日：1991-07-02

申请号：US226819

申请日：1988-08-01

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Tsutomu Murakami ,  Kozo Arao ,  Yasushi Fujioka

IPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G02F1/03 ,  G02F1/05 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/1832 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/0392 ,  H01L31/068 ,  Y02E10/547 ,  Y10T428/31678

摘要： A functional ZnSe.sub.1-x Te.sub.x :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 to 1:9 by the atom number ratio, hydrogen atoms are contained in an amount of 1 to 4 atomic % and the ratio of the crystal grain domains per unit volume is in the range from 65 to 85% by volume. There are also provided improved p-type and n-type ZnSe.sub.1-x Te.sub.x :H:M films (M stands for a dopant) of high electroconductivity characterized in the foregoing way.These deposited films may be efficiently deposited even on a non-single crystal substrate made of metal, glass or synthetic resin with a high deposition rate.These films are suited for the preparation of a high functional device such as a photovoltaic element.

摘要翻译： 功能性ZnSe1-xTex：H膜具有高的掺杂效率，并且在光照射下的特性没有显着变化。 所述膜的特征在于Se / Te的定量比在3:7至1:9的范围内以原子数比计，氢原子的含量为1至4原子％，晶粒的比例 每单位体积的畴数在65至85体积％范围内。 还提供了以上述方式表征的改进的高导电性的p型和n型ZnSe1-xTex：H：M膜（M代表掺杂剂）。 这些沉积膜即使在金属，玻璃或合成树脂制成的非单晶衬底上也可以高沉积速率。 这些膜适用于制备诸如光电元件的高功能器件。

公开(公告)号：US4851302A

公开(公告)日：1989-07-25

申请号：US221761

申请日：1988-07-20

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai ,  Masahiro Kanai

IPC分类号： H01L31/04 ,  G06F9/48 ,  H01L21/205 ,  H01L21/365 ,  H01L31/0248 ,  H01L31/0296 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/02963 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547 ,  Y10T428/12528 ,  Y10T428/12792

摘要： There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic % and the ratio of crystal grains per unit volume being 65 to 85 vol %. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.

摘要翻译： 提供了由锌原子，硒原子和至少氢原子组成的功能性ZnSe：H沉积膜，氢原子的含量为1〜4原子％，单位体积的结晶比为65〜85体积％ ％。 它能够高效掺杂，对辐照稳定。 可以通过掺杂制成高导电性p型n型ZnSe：H：M膜。 它可以有效地沉积在不能有效沉积的非单晶衬底如金属，玻璃和合成树脂上。 因此，本发明使得可以在非单晶衬底上形成诸如ZnSe膜的光电元件的高功能器件。

公开(公告)号：US4926229A

公开(公告)日：1990-05-15

申请号：US272926

申请日：1988-11-18

申请人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

发明人： Katsumi Nakagawa ,  Shunichi Ishihara ,  Masahiro Kanai ,  Kozo Arao ,  Yasushi Fujioka ,  Akira Sakai

IPC分类号： H01L31/0296 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L31/02963 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/075 ,  H01L31/1828 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/543 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved pin junction photovoltaic element which causes photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type semiconductor layer and said n-type semiconductor layer comprises a p-typed or n-typed ZnSe:H:M film, where M is a dopant of p-type or n-type: the amount of the H is in the range of from 1 to 4 atomic %: and said film contains crystal grain domains in a proportion of 65 to 85 vol % per unit volume; and said i-type semiconductor layer comprises a non-single crystal Si(H,F) film or a non-single crystal Si(C,Ge)(H,F) film.

公开(公告)号：US5244509A

公开(公告)日：1993-09-14

申请号：US741734

申请日：1991-08-07

申请人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

发明人： Kozo Arao ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Eiji Takeuchi

IPC分类号： H01L31/04 ,  H01L31/0236

CPC分类号： H01L31/0236 ,  Y02E10/50 ,  Y10T428/12472 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/24479

摘要： A reflective solar cell substrate comprising a base member composed of a metallic material provided with irregularities at the surface thereof and a buffer layer disposed on said base member so as to cover the entire of said irregularities at the surface of said base member, said buffer layer being composed of a substantially transparent or translucent and conductive material, said buffer layer being provided with irregularities at the surface thereof, and said irregularities at the surface of said buffer layer comprising a plurality of thickened convex portions and a plurality of thinned concave portions, said portions being alternately arranged. The reflective solar cell substrate reflects light reaching the substrate without being absorbed by the optically active layer at an effective angle, whereby the solar cell exhibits improved photovoltaic characteristics.

摘要翻译： 一种反射式太阳能电池基板，包括由在其表面设置有凹凸的金属材料构成的基底构件和设置在所述基底构件上的缓冲层，以覆盖所述基底构件的表面上的整个所述凹凸，所述缓冲层 由基本上透明或半透明且导电的材料组成，所述缓冲层在其表面设置有凹凸，并且所述缓冲层表面的所述凹凸包括多个增厚的凸起部分和多个变薄的凹部，所述 交替布置的部分。 反射太阳能电池基板反射到达基板的光，而不会以有效的角度被光学活性层吸收，由此太阳能电池表现出改进的光电特性。

公开(公告)号：US6110347A

公开(公告)日：2000-08-29

申请号：US172774

申请日：1998-10-15

申请人： Kozo Arao ,  Katsumi Nakagawa ,  Yukiko Iwasaki

发明人： Kozo Arao ,  Katsumi Nakagawa ,  Yukiko Iwasaki

IPC分类号： H01L31/0224 ,  H01L31/052 ,  H01L31/075 ,  H01L31/18 ,  C25D9/00 ,  B05D1/18 ,  C25D9/04 ,  C25D9/10

CPC分类号： H01L31/022466 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.

摘要翻译： 一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法，从而使氧化铟膜 提供了衬底上的形成。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。 还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法，以及使用该膜形成方法制造的半导体元件用基板和光电元件。

公开(公告)号：US06258702B1

公开(公告)日：2001-07-10

申请号：US09190100

申请日：1998-11-12

申请人： Katsumi Nakagawa ,  Kozo Arao ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Kozo Arao ,  Yukiko Iwasaki

IPC分类号： H01L2128

CPC分类号： H01L21/02565 ,  H01L21/02425 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/16 ,  H01L29/872 ,  H01L31/022425 ,  Y02E10/50

摘要： A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.

摘要翻译： 用于形成氧化亚铜膜的成膜方法包括以下步骤：将至少具有导电表面的基材浸入含有共存于其中的铜离子和硝酸根离子的溶液中，并使氧化亚铜膜沉积在电 通过阴极反应形成衬底的导电表面。 使用成膜方法也可以提供太阳能电池或整流器等半导体装置的制造方法。

公开(公告)号：US5986204A

公开(公告)日：1999-11-16

申请号：US820565

申请日：1997-03-19

申请人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Kozo Arao

发明人： Yukiko Iwasaki ,  Katsumi Nakagawa ,  Kozo Arao

IPC分类号： H01L31/00

CPC分类号： H01L31/056 ,  Y02E10/52

摘要： By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.

摘要翻译： 通过使用改进的背反射层，以高生产率提供具有优异的耐迁移性和高光电转换效率的光伏电池。 光伏电池包括含有银含量等于或小于30原子％的银 - 铝合金的金属层，其余为铝，或包含铜含量在30〜 50原子％，其余为铝。 优选通过溅射在较低温度下形成这些层，特别是对于银 - 铝合金，等于或低于110℃的温度，并且在等于或小于120℃的温度下，对于铜 -铝合金。