公开(公告)号：US08501520B2

公开(公告)日：2013-08-06

申请号：US12697420

申请日：2010-02-01

申请人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

发明人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

IPC分类号： H01L51/40

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L21/324 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14698

摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

公开(公告)号：US20100203667A1

公开(公告)日：2010-08-12

申请号：US12697420

申请日：2010-02-01

申请人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

发明人： Katsunori Hirota ,  Akira Ohtani ,  Kazuaki Tashiro ,  Yusuke Onuki ,  Takanori Watanabe ,  Takeshi Ichikawa

IPC分类号： H01L31/18 ,  H01L21/265

CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L21/324 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14698

摘要： A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

摘要翻译： 一种固态图像传感器的制造方法，该方法包括以下步骤：利用第一掩模，通过用第一导电类型的杂质的离子注入半导体衬底，在光电转换单元中形成电荷存储区; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 通过使用第二掩模将具有第二导电类型的杂质的离子注入半导体衬底来形成电荷存储区域的表面区域; 通过RTA（快速热退火）在不低于800℃且不超过1200℃的温度下加热半导体衬底; 以及在形成表面区域的步骤之后依次形成在小于800℃的温度下覆盖光电转换单元的抗反射膜。

公开(公告)号：US07847259B2

公开(公告)日：2010-12-07

申请号：US12473564

申请日：2009-05-28

申请人： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Shin Kikuchi ,  Tomoyuki Noda

发明人： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Shin Kikuchi ,  Tomoyuki Noda

IPC分类号： G01T1/20

CPC分类号： G01T1/2018 ,  G01T1/2928 ,  H01L27/14609 ,  H01L27/14658

摘要： An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.

公开(公告)号：US07639295B2

公开(公告)日：2009-12-29

申请号：US11289614

申请日：2005-11-30

申请人： Osamu Yuki ,  Noriyuki Kaifu ,  Kazuaki Tashiro ,  Tetsunobu Kochi

发明人： Osamu Yuki ,  Noriyuki Kaifu ,  Kazuaki Tashiro ,  Tetsunobu Kochi

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H04N5/32 ,  H04N5/3415 ,  H04N5/347

摘要： An image sensing apparatus provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of image sensing elements.

摘要翻译： 一种具有多个图像感测元件的图像感测装置，每个图像感测元件包括多个光电转换部分和一个加法电路，适于从多个光电转换部分添加信号以获得一个像素信号，其中加法电路将信号 通过加法获得的区域以相等的间隔布置在多个图像感测元件上延伸的区域中。

公开(公告)号：US20090268050A1

公开(公告)日：2009-10-29

申请号：US12428105

申请日：2009-04-22

申请人： Kazuaki Tashiro ,  Noriyuki Kaifu

发明人： Kazuaki Tashiro ,  Noriyuki Kaifu

IPC分类号： H04N5/228 ,  H04N5/335

CPC分类号： H04N5/363 ,  H04N5/374 ,  H04N5/37457

摘要： An image sensor comprises a pixel array, and a control unit which performs, in a first period, a control operation of an electric potential of a signal line to turn off a MOS transistor while the electric potential of a charge-voltage converter in a selected pixel is maintained at an electric potential of a selected state, and, in a second period subsequent to the first period, performs a control operation of the electric potential of the signal line to turn on the MOS transistor while the electric potential of the charge-voltage converter in the selected pixel is maintained at an electric potential of the selected state.

摘要翻译： 图像传感器包括像素阵列和控制单元，该控制单元在第一时段中执行信号线的电位的控制操作以关闭MOS晶体管，同时在所选择的电压 - 电压转换器的电位 像素保持在选择状态的电位，并且在第一周期之后的第二周期中，执行信号线的电位的控制操作以导通MOS晶体管，同时电荷 - 所选择的像素中的电压转换器保持在所选状态的电位。

公开(公告)号：US20050259170A1

公开(公告)日：2005-11-24

申请号：US11143726

申请日：2005-06-03

申请人： Noriyuki Kaifu ,  Kazuaki Tashiro ,  Osamu Yuki

发明人： Noriyuki Kaifu ,  Kazuaki Tashiro ,  Osamu Yuki

IPC分类号： A61B6/00 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09 ,  H04N5/21 ,  H04N5/32 ,  H04N5/325 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/367 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N7/18 ,  H04N3/14

CPC分类号： H04N5/325 ,  H04N5/2176

摘要： An image sensing apparatus including an X-ray image sensing unit having a non-destructive read function, adapted to sense an oject image, and a subtractor adapted to sequentially output as a corrected value a difference between a plurality of frames sequentially read out non-destructively from the X-ray image sensing unit and a frame read out before the plurality of frames.

摘要翻译： 一种图像感测装置，包括具有非破坏性读取功能的X射线图像感测单元，适用于感测对象图像;以及减法器，适于依次输出多个帧之间的差分作为校正值， 从X射线图像感测单元和在多个帧之前读出的帧相消。

公开(公告)号：US20050173646A1

公开(公告)日：2005-08-11

申请号：US11100889

申请日：2005-04-06

申请人： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Shin Kikuchi ,  Tomoyuki Noda

发明人： Kazuaki Tashiro ,  Noriyuki Kaifu ,  Shin Kikuchi ,  Tomoyuki Noda

IPC分类号： G01T1/20 ,  A61B6/00 ,  G01J1/00 ,  G01T1/24 ,  G01T1/29 ,  H01L27/14 ,  H01L27/146 ,  H04N1/38 ,  H04N5/32 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/374

CPC分类号： G01T1/2018 ,  G01T1/2928 ,  H01L27/14609 ,  H01L27/14658

摘要： An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.

摘要翻译： 图像传感器具有多个像素，每个像素包括光电转换器和用于处理来自光电转换器的信号并输出​​处理的信号的像素电路和设置在光电转换器之间的扫描电路，所述扫描电路包括在至少两个相邻像素中的每一个中 在沿单个方向排列的多个像素中。 边缘像素从图像传感器的边缘向内部依次容纳预定的空白区域，光电转换器和像素电路。 存在两个相邻像素中的至少一个位置，两个像素中的第一像素依次容纳像素电路，光电转换器和预定的空白区域，第二个按顺序容纳预定的空白区域，光电转换器 和像素电路。 扫描电路设置在两个相邻像素之间的预定空白区域中。

公开(公告)号：US06847698B2

公开(公告)日：2005-01-25

申请号：US09916269

申请日：2001-07-30

申请人： Noriyuki Kaifu ,  Kazuaki Tashiro ,  Osamu Yuki

发明人： Noriyuki Kaifu ,  Kazuaki Tashiro ,  Osamu Yuki

IPC分类号： G01T1/17 ,  A61B6/00 ,  G01T1/20 ,  G01T1/29 ,  H01L27/14 ,  H01L27/146 ,  H01L31/09 ,  H04N5/32 ,  H05G1/42 ,  H05G1/44 ,  H05G1/14

CPC分类号： A61B6/542 ,  A61B6/00 ,  A61B6/4233 ,  H05G1/42

摘要： When a phototimer unit is used for exposure control, a deterioration in a S/N ratio occurs, and optimal exposure cannot be performed due to a deviation from a proper image sensing position and the like. Therefore, there is provided a radiation image sensing apparatus comprising an X-ray image sensing panel which is capable of non-destructive reading and adapted to sense an object image by allowing radiation from an X-ray source to pass through an object, and a control circuit adapted to perform control to stop emission of radiation from the X-ray source on the basis of a signal obtained from the X-ray image sensing panel by non-destructive reading in the image sensing operation.

摘要翻译： 当使用光速单位进行曝光控制时，会发生S / N比的劣化，并且由于偏离适当的图像感测位置等而不能进行最佳的曝光。 因此，提供了一种包括X射线图像感测面板的放射线图像感测装置，其能够进行非破坏性读取，并且适于通过允许来自X射线源的辐射通过对象来感测对象图像，并且 控制电路，其适于执行控制，以根据在所述图像感测操作中的非破坏性读取从所述X射线图像感测面板获得的信号来停止来自所述X射线源的辐射。

公开(公告)号：US6133614A

公开(公告)日：2000-10-17

申请号：US697281

申请日：1996-08-27

申请人： Tatsumi Shoji ,  Keiichi Kawasaki ,  Isao Tanikawa ,  Kazuaki Tashiro ,  Ichiro Tanaka ,  Tatsuya Yamazaki

发明人： Tatsumi Shoji ,  Keiichi Kawasaki ,  Isao Tanikawa ,  Kazuaki Tashiro ,  Ichiro Tanaka ,  Tatsuya Yamazaki

IPC分类号： H01L27/146 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/115

CPC分类号： H01L27/14663 ,  H01L27/14623

摘要： A method for manufacturing a semiconductor apparatus for detecting radiation provided with phosphor comprises the steps of forming a phosphor layer integrally with a meshed partition plate having partitions per pixel of the semiconductor apparatus for detecting radiation, and of separating the phosphor per pixel by removing the phosphor on the partitioning portion of the partition plate by the irradiation of laser beam in the form of grooves together with the surface layer of the partitioning portions in order to make the phosphor thick to obtain a higher sensitivity, and also to make pixel pitches finer to enhance resolution, thus obtaining exact images without creating any cross talks between pixels.

摘要翻译： 一种用于检测设置有荧光体的辐射检测用半导体装置的方法，包括以下步骤：与半导体装置的每隔像素分隔的网状分隔板一体地形成荧光体层，用于检测辐射，并通过除去荧光体 通过与分隔部分的表面层一起以沟槽形式的激光束照射分隔板的分隔部分，以使荧光体厚，以获得更高的灵敏度，并且还使得像素间距更细以提高 分辨率，从而获得精确的图像，而不会在像素之间创建任何交叉谈话。

公开(公告)号：US6121620A

公开(公告)日：2000-09-19

申请号：US801854

申请日：1997-02-21

申请人： Kazuaki Tashiro ,  Keiichi Kawasaki ,  Tatsumi Shoji ,  Ichiro Tanaka ,  Tatsuya Yamazaki

发明人： Kazuaki Tashiro ,  Keiichi Kawasaki ,  Tatsumi Shoji ,  Ichiro Tanaka ,  Tatsuya Yamazaki

IPC分类号： G01T1/20 ,  H01L31/0232

CPC分类号： H01L27/14692 ,  H01L27/14663

摘要： A large-area, compact and highly reliable radiation detector is produced by a process comprising the steps of laminating a phosphor sheet to a substrate having at least a photoelectric transducer, a driving element and a wiring matrix, and sealing the phosphor sheet and substrate thus laminated, by imparting a sealing medium to at least part of the peripheral portions of the phosphor sheet and the substrate, at least one of the steps being carried out in a vacuum chamber, to thereby bring the phosphor sheet into close contact with the substrate by atmospheric pressure.

摘要翻译： 通过包括以下步骤的方法制造大面积，紧凑和高度可靠的辐射检测器，该方法包括以下步骤：将磷光体片层压到具有至少光电转换器，驱动元件和布线基体的基板上，并且因此密封荧光体片和基板 通过向荧光体片和基板的周边部分的至少一部分赋予密封介质，在真空室中进行至少一个步骤，从而通过以下方式使荧光体片与基板紧密接触： 气压。