公开(公告)号：US20070252162A1

公开(公告)日：2007-11-01

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US07508011B2

公开(公告)日：2009-03-24

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括光产生区3，第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5和第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7.在此 半导体发光器件，光生成区域3由III族氮化物半导体构成，并且包括InAlGAN半导体层。 第一AlX1Ga1-X1N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且设置在发光区域3上。第二AlX2Ga1-X2N半导体层7具有 p型浓度比第一AlX1Ga1-X1N半导体层5小。第二AlX2Ga1-X2N半导体（0 <= X2 <= 1）层7设置在发光区域3和第一AlX1Ga1-X1N半导体层5之间。

公开(公告)号：US20050040414A1

公开(公告)日：2005-02-24

申请号：US10916802

申请日：2004-08-11

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/36 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US08420426B2

公开(公告)日：2013-04-16

申请号：US13093246

申请日：2011-04-25

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.

摘要翻译： 为了提供使用能够通过高效发光获得高功率发光的氮化物半导体的发光器件，制造发光器件的方法包括在第一导电类型的一侧形成第一导电类型的第一AlGaN层 在氮化物半导体衬底的第一主表面上，在第一AlGaN层上形成包含InAlGaN四元合金的发光层，在发光层上形成第二导电类型的第二AlGaN层，以及在氮化物半导体衬底之后去除氮化物半导体衬底 形成第二AlGaN层。

公开(公告)号：US07943943B2

公开(公告)日：2011-05-17

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US20080076199A1

公开(公告)日：2008-03-27

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US07294867B2

公开(公告)日：2007-11-13

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和 第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。 在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。 第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及 设置在发光区域3上。 第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。 第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 N半导体层5。}

公开(公告)号：US07859007B2

公开(公告)日：2010-12-28

申请号：US10916802

申请日：2004-08-11

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L31/075

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US20050151154A1

公开(公告)日：2005-07-14

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/32 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGaN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在光生成区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US20090026440A1

公开(公告)日：2009-01-29

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20JJ。