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12 条记录 (耗时 0.022 秒)

    Rotatable read/write optical head apparatus
    1.
    发明授权
    Rotatable read/write optical head apparatus 失效
    可旋转读/写光头设备

    公开(公告)号：US5195074A

    公开(公告)日：1993-03-16

    申请号：US740379

    申请日：1991-08-05

    申请人： Katsushide Tanoshima ,  Minoru Ohtsuka ,  Shizuo Nagata ,  Masahiro Takahashi ,  Yasuo Shimizu

    发明人： Katsushide Tanoshima ,  Minoru Ohtsuka ,  Shizuo Nagata ,  Masahiro Takahashi ,  Yasuo Shimizu

    IPC分类号： G11B7/085 ,  G11B7/09 ,  G11B7/12

    CPC分类号： G11B7/12 ,  G11B7/08582 ,  G11B7/09

    摘要： In an optical head apparatus for recording or reproducing information onto or from an optical disc, a carriage is movable along a guide shaft extending in a direction parallel with the radial direction of the optical disc, and an armature is mounted on the carriage so that it can rotate about a pivotal axis perpendicular to the surface of the optical disc. An objective lens is fixed to the armature and positioned to traverse the tracks on the optical disc when the armature rotates. Guide yokes extend in parallel with the guide shaft. Tracking and carriage-servo coils are fixed to the armature and have a hollow through which the guide yokes loosely extend. A magnetic field means creates magnetic lines of force perpendicular to the longitudinal direction of the guide yokes and parallel with the surface of the optical disc. A drive circuit supplies currents to the tracking and carriage-servo coils in such directions as to produce electromagnetic forces in parallel with each other thereby driving the armature along the guide yokes or in such directions as to produce electromagnetic forces in antiparallel with each other to rotate the armature about the pivotal axis.

    摘要翻译： 在用于在光盘上记录或再现信息的光学头装置中，滑架可沿着与光盘的径向平行的方向延伸的引导轴移动，并且电枢安装在滑架上，使得它 可围绕垂直于光盘表面的枢转轴旋转。 当电枢旋转时，物镜固定到电枢并定位成横过光盘上的轨道。 引导轭与引导轴平行延伸。 跟踪和托架伺服线圈固定在电枢上，并具有中空的引导线松动地延伸通过该中空。 磁场意味着产生垂直于引导轭的纵向方向的磁力线并与光盘的表面平行。 驱动电路将电流提供给跟踪和托架伺服线圈，以便产生彼此平行的电磁力，从而沿着引导轭驱动电枢，或沿着这样的方向驱动电枢，以产生彼此反平行的电磁力，以使其旋转 电枢围绕枢转轴线。

    Highly sensitive process for measuring fine deformation
    4.
    发明授权
    Highly sensitive process for measuring fine deformation 失效
    用于测量精细变形的高灵敏度过程

    公开(公告)号：US3985444A

    公开(公告)日：1976-10-12

    申请号：US567286

    申请日：1974-09-19

    申请人： Matsuo Takashima ,  Minoru Ohtsuka ,  Kazuya Matsumoto

    发明人： Matsuo Takashima ,  Minoru Ohtsuka ,  Kazuya Matsumoto

    IPC分类号： G01B11/16 ,  G01B9/02

    CPC分类号： G01B11/165

    摘要： A highly sensitive process for measuring fine deformation comprises a stage of illumination with beam to on a periodic structure having diffractive function as well as lacking in diffractive function, a stage of selecting wave of diffraction order having conjugate or nearly conjugate relation among diffracted wave fronts projected from the periodic structure by means of said illumination with beam so as to cause mutual interference, thus, the amount of deformation is measured by the interference fringe formed by said mutual interference when the basic period of periodic structure is displaced or periodic structure is deformed.

    摘要翻译： 用于测量精细变形的高度灵敏的方法包括具有衍射功能和缺乏衍射功能的周期性结构的具有光束的照明阶段，在衍射波前投影的衍射级具有共轭或近似共轭关系的阶段 通过所述具有光束的照明的周期性结构，以引起相互干扰，因此当周期性结构的基本周期被移位或周期性结构变形时，通过由所述相互干涉形成的干涉条纹来测量变形量。

    Stacked heat exchanger and method of manufacturing the same
    7.
    发明授权
    Stacked heat exchanger and method of manufacturing the same 失效
    堆叠式换热器及其制造方法

    公开(公告)号：US5417280A

    公开(公告)日：1995-05-23

    申请号：US112424

    申请日：1993-08-25

    申请人： Masateru Hayashi ,  Kazuo Ishii ,  Hiroshi Iokawa ,  Shigeo Sakai ,  Minoru Ohtsuka ,  Kenji Matsuda ,  Hidenao Kawai

    发明人： Masateru Hayashi ,  Kazuo Ishii ,  Hiroshi Iokawa ,  Shigeo Sakai ,  Minoru Ohtsuka ,  Kenji Matsuda ,  Hidenao Kawai

    IPC分类号： B60H1/32 ,  F25B39/02 ,  F28D1/03 ,  F28D1/02

    CPC分类号： F25B39/022 ,  B60H1/3227 ,  F28D1/0341 ,  F28D2021/0085

    摘要： The present invention discloses a stacked heat exchanger in which separate flow paths 54 and 55 which are formed by corrugated inner fins 52 and 53 are disposed in chambers 48 and 49 of a flat tube 41, and also separate U-shaped flow paths 56 are formed at the U-turn portion 50 to make the flow of refrigerant smooth, increase the area of flow paths, and eliminate the stagnation of refrigerant at the U-turn portion 50. The separation of refrigerant into two phases of gas and liquid due to centrifugal forces at the U-turn portion 50 is limited to the inside of each divided U-shaped flow path 56, thereby the distribution of the gas and liquid phases can be decreased. Also disclosed is a method of manufacturing a stacked heat exchanger, in which the reliability of flat tube 41 is improved, and the leakage of refrigerant is prevented.

    摘要翻译： 本发明公开了一种层叠热交换器，其中由波纹状内翅片52和53形成的分离的流动路径54和55设置在扁平管41的腔室48和49中，并且还形成有分离的U形流动路径56 在U形转弯部分50处，使制冷剂流动平稳，增加流路面积，消除U形转弯部分50处的制冷剂停滞。由于离心将制冷剂分离成气相和液体两相 U形转弯部分50的力限于每个分开的U形流路56的内部，从而可以减少气相和液相的分布。 还公开了一种制造堆叠式热交换器的方法，其中扁管41的可靠性提高，并且防止制冷剂的泄漏。

    Method of manufacturing a semiconductor device including plasma treatment of contact holes
    9.
    发明授权
    Method of manufacturing a semiconductor device including plasma treatment of contact holes 失效
    制造包括等离子体处理接触孔的半导体器件的方法

    公开(公告)号：US5244535A

    公开(公告)日：1993-09-14

    申请号：US850594

    申请日：1992-03-13

    申请人： Minoru Ohtsuka ,  Kazutoshi Taira

    发明人： Minoru Ohtsuka ,  Kazutoshi Taira

    IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768

    CPC分类号： H01L21/02063 ,  H01L21/02043 ,  H01L21/31116 ,  H01L21/76802 ,  Y10S438/963

    摘要： Method of making a semiconductor device, wherein an etchant gas is employed to etch a contact hole through an insulation layer overlying a conduction layer as disposed on a substrate of semiconductor material such that a surface portion of the conduction layer is selectively exposed by the formation of the contact hole through the overlying insulation layer. Normally, the etchant gas as so employed will have a tendency to react with the underlying conduction layer so as to form reaction products on the selectively exposed surface portion of the conduction layer increasing the contact resistance thereof. The method involves flooding the etched contact hole immediately following its formation with a gaseous medium covering the area of the selectively exposed surface portion of the conduction layer, wherein the gaseous medium is capable of inhibiting the formation of reaction products on the selectively exposed surface portion of the conduction layer from the original etchant gas. The formation of resistance-increasing reaction products on the selectively exposed surface portion of the conduction layer is thereby suppressed such that an undesirable increase in contact resistance is avoided. In a specific aspect, the etchant gas is a fluorine-based gaseous plasma, and the reaction product-inhibiting gaseous medium is a nitrogen-containing plasma.

    摘要翻译： 制造半导体器件的方法，其中使用蚀刻剂气体来通过覆盖导电层的绝缘层蚀刻接触孔，所述绝缘层设置在半导体材料的衬底上，使得导电层的表面部分通过形成 接触孔通过上覆绝缘层。 通常，如此使用的蚀刻剂气体将具有与下面的传导层反应的趋势，以便在导电层的选择性暴露的表面部分上形成增加其接触电阻的反应产物。 该方法包括在其形成之后立即用蚀刻的接触孔淹没覆盖导电层的选择性暴露的表面部分的区域的气态介质，其中气态介质能够抑制在选择性暴露的表面部分上的反应产物的形成 来自原始蚀刻剂气体的导电层。 由此抑制在导电层的选择性暴露的表面部分上的电阻增加反应产物的形成，从而避免了不期望的接触电阻增加。 在具体方面，蚀刻剂气体是氟系气态等离子体，反应产物抑制性气体介质是含氮等离子体。