公开(公告)号：US20070232031A1

公开(公告)日：2007-10-04

申请号：US11805428

申请日：2007-05-22

申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US20060258124A1

公开(公告)日：2006-11-16

申请号：US11401578

申请日：2006-04-10

申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US20050277272A1

公开(公告)日：2005-12-15

申请号：US10866471

申请日：2004-06-10

申请人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： C30B1/00 ,  G01R31/26 ,  H01L21/20 ,  H01L21/205 ,  H01L21/36 ,  H01L21/66

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US07396743B2

公开(公告)日：2008-07-08

申请号：US10866471

申请日：2004-06-10

申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US07262116B2

公开(公告)日：2007-08-28

申请号：US11401578

申请日：2006-04-10

申请人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

发明人： Kaushal K. Singh ,  David Carlson ,  Manish Hemkar ,  Satheesh Kuppurao ,  Randhir Thakur

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C23C16/482 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661

摘要： A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750° C., and typically at a temperature from about 700° C. to about 500° C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

摘要翻译： 一种制备用于覆盖或选择性外延沉积含硅和/或含锗膜的清洁衬底表面的方法。 此外，生长含硅和/或含锗膜的方法，其中基板清洗方法和膜生长方法都在低于750℃的温度下进行，通常在约700℃的温度下进行 ℃至约500℃。清洁方法和膜生长方法在其中生长含硅膜的处理体积中使用波长为约310nm至约120nm的辐射。 将该辐射与用于反应性清洁或成膜组分物质的特定分压范围的组合的使用使得能够在低于工业以前已知的温度下进行基材清洗和外延膜生长。

公开(公告)号：US07579232B1

公开(公告)日：2009-08-25

申请号：US12216924

申请日：2008-07-11

申请人： Er-Xuan Ping ,  Randhir Thakur ,  Klaus Scheugraf

发明人： Er-Xuan Ping ,  Randhir Thakur ,  Klaus Scheugraf

IPC分类号： H01L21/8234 ,  H01L21/8222 ,  H01L21/425

CPC分类号： H01L27/1021 ,  H01L21/7688 ,  H01L27/101

摘要： A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer such that a contact hole in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer over the insulating layer such that a portion of the shadow mask layer overhangs a portion of the contact hole, forming a conductive layer such that a first portion of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion of the conductive layer is located over the shadow mask layer, and removing the shadow mask layer and the second portion of the conductive layer.

摘要翻译： 制造半导体器件的方法包括形成由绝缘层包围的柱状半导体器件，使得绝缘层中的接触孔露出半导体器件的上表面。 该方法还包括在绝缘层上形成荫罩层，使得阴影掩模层的一部分悬垂在接触孔的一部分上，形成导电层，使得导电层的第一部分位于 暴露在接触孔中的半导体器件和导电层的第二部分位于荫罩层之上，并且去除荫罩层和导电层的第二部分。

公开(公告)号：US20070087506A1

公开(公告)日：2007-04-19

申请号：US11538765

申请日：2006-10-04

申请人： Randhir Thakur

发明人： Randhir Thakur

IPC分类号： H01L21/336

CPC分类号： H01L21/28211 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31662 ,  H01L21/31675 ,  H01L21/76221 ,  H01L29/40114 ,  H01L29/518

摘要： In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxidation. In a preferred embodiment, these steps are clustered and transportation between the clustered process chambers takes place in a controlled environment such as nitrogen or a vacuum. In some embodiments, the method provides an oxide layer to be used as part of the device, such as a tunnel oxide for a flash-EEPROM, or as a general gate oxide. Alternatively, the steps can be used to sculpt through oxidation various levels of a substrate, thereby allowing for embedded memory architecture. Cleaning between oxidation steps offers the advantage of providing a more defect-free oxide layer or providing access to a more defect-free level of substrate.

公开(公告)号：US06955996B2

公开(公告)日：2005-10-18

申请号：US10624817

申请日：2003-07-22

申请人： Daniel F Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

发明人： Daniel F Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： C30B33/00 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

公开(公告)号：US06930015B2

公开(公告)日：2005-08-16

申请号：US10319938

申请日：2002-12-16

申请人： Er-Xuan Ping ,  Randhir Thakur

发明人： Er-Xuan Ping ,  Randhir Thakur

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L21/84

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02645 ,  H01L21/2022 ,  H01L27/1085 ,  H01L28/84 ,  H01L28/90

摘要： Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

摘要翻译： 公开了通过非晶材料的扩散增强结晶形成粗糙表面的方法。 在一个方面，可以通过一个或多个非晶硅层的掺杂剂扩散增强结晶来形成导电半球形晶粒硅。 为了进一步提高半球形晶粒硅的形成的均匀性，可以在结晶之前将非晶硅的暴露表面接种，以进一步增强在半球形晶粒硅中形成的表面结构的均匀性。

公开(公告)号：US06927169B2

公开(公告)日：2005-08-09

申请号：US10325353

申请日：2002-12-19

申请人： Dan Maydan ,  Randhir Thakur

发明人： Dan Maydan ,  Randhir Thakur

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/84 ,  H01L21/311

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/84

摘要： A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.

摘要翻译： 用于以对下层材料例如硅具有平坦化作用的方式形成氧化物的方法和装置。 特别地，在下层材料上生长具有不均匀厚度分布的氧化物。 根据下层材料的不均匀轮廓选择氧化物的不均匀厚度分布。 与预氧化表面相比，随后将氧化物除去在下面的材料的平坦化表面之后。