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1.发明授权Manufacturing method of piezoelectric film element, piezoelectric film element and piezoelectric device 有权压电薄膜元件，压电薄膜元件和压电元件的制造方法公开(公告)号：US09166142B2
公开(公告)日：2015-10-20
申请号：US13567157
申请日：2012-08-06
IPC分类号： H01L41/332 , H01L41/08 , H01L41/047 , H01G5/18 , H01L41/09 , H01L41/187
CPC分类号： H01L41/332 , H01G5/18 , H01L41/047 , H01L41/0477 , H01L41/0805 , H01L41/094 , H01L41/1873
摘要： A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-XNaX)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.
摘要翻译： 压电薄膜元件的制造方法包括在基板上形成具有由（K1-XNaX）NbO3组成式表示的钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，并通过以下方式对压电膜进行干法蚀刻 使用包含氟系反应气体的低压等离子体。
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2.发明授权公开(公告)号：US08896187B2
公开(公告)日：2014-11-25
申请号：US13532081
申请日：2012-06-25
IPC分类号： H01L41/083 , H01L41/08 , H01L41/187 , H01L41/316
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译： 提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜， 其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合 并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属 表示包含在压电膜中的金属原子。
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3.发明申请公开(公告)号：US20120304429A1
公开(公告)日：2012-12-06
申请号：US13488230
申请日：2012-06-04
IPC分类号： H01L41/22
CPC分类号： H01L41/0815 , H01L41/1873 , H01L41/316 , H01L41/332 , Y10T29/42
摘要： A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode.
摘要翻译： 压电薄膜元件的制造方法包括在基板上形成下电极，在下电极上形成包含具有钙钛矿结构的无铅碱铌酸酯系化合物的压电膜，在压电膜上形成掩模图案， 通过掩模图案蚀刻压电膜，在干蚀刻之后去除掩模图案，并在氧化气氛中对压电膜进行热处理。 压电器件的制造方法包括：在压电膜元件的制造方法形成的压电膜元件的压电膜上形成上电极，将电压施加单元或电压检测单元连接到下电极， 上电极。
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4.发明授权Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法公开(公告)号：US09231185B2
公开(公告)日：2016-01-05
申请号：US13137202
申请日：2011-07-27
IPC分类号： H01B13/00 , H01L41/08 , H05K3/10 , H01L21/67 , H01L41/187 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序， 含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。
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公开(公告)号：US08446074B2
公开(公告)日：2013-05-21
申请号：US13636883
申请日：2011-03-24
IPC分类号： H01L41/187
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译： 提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下 ，或压电薄膜3的氢浓度为4×1019 / cm3以下。
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6.发明申请公开(公告)号：US20130015392A1
公开(公告)日：2013-01-17
申请号：US13532081
申请日：2012-06-25
IPC分类号： H01L41/187 , H01L41/047 , H01L41/22 , H01L41/04
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译： 提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜， 其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合 并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属 表示包含在压电膜中的金属原子。
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7.发明申请Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件公开(公告)号：US20120056508A1
公开(公告)日：2012-03-08
申请号：US13137689
申请日：2011-09-02
IPC分类号： H01L41/047 , H01L41/22 , B32B3/00 , H01L41/113 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻 发射离子等离子体中Na的发射峰强度为压电薄膜。 压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。
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8.发明授权Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件公开(公告)号：US09406867B2
公开(公告)日：2016-08-02
申请号：US13137689
申请日：2011-09-02
IPC分类号： C23F1/00 , H01L41/332 , H01L41/08 , H01L41/187 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻 发射离子等离子体中Na的发射峰强度为压电薄膜。 该压电膜由组成式（K1-xNax）NbO3（0.4≤x≤0.7）表示的基于铌酸盐的钙钛矿结构制成。
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公开(公告)号：US20130106242A1
公开(公告)日：2013-05-02
申请号：US13808718
申请日：2011-03-30
IPC分类号： H01L41/187 , H01L41/18
CPC分类号： H01L41/1873 , C04B35/495 , C04B2235/3201 , C04B2235/3251 , C04B2235/6588 , C04B2235/761 , C04B2235/768 , C04B2235/79 , H01L41/094 , H01L41/18 , H01L41/316
摘要： To provide a piezoelectric film element, including: a substrate; and a piezoelectric film having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 (0
摘要翻译： 提供一种压电膜元件，包括：基板; 以及在基板上设置有由组成式（K1-xNax）yNbO3（0
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公开(公告)号：US20130009519A1
公开(公告)日：2013-01-10
申请号：US13636883
申请日：2011-03-24
IPC分类号： H01L41/18
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译： 提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下 ，或压电薄膜3的氢浓度为4×1019 / cm3以下。
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