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公开(公告)号：US5539692A
公开(公告)日：1996-07-23
申请号：US191411
申请日：1994-02-03
申请人： Kazuhiko Kajigaya , Masashi Horiguchi , Yoshinobu Nakagome , Ryoichi Hori , Tetsuro Matsumoto , Masaharu Kubo
发明人： Kazuhiko Kajigaya , Masashi Horiguchi , Yoshinobu Nakagome , Ryoichi Hori , Tetsuro Matsumoto , Masaharu Kubo
CPC分类号： G11C29/44 , G06F11/006 , G11C7/1045
摘要： A semiconductor chip is provided with a function selection circuit for selecting memory functions according to the information stored in nonvolatile memory elements is sealed in a package, and the memory functions are set finally by writing the nonvolatile memory element in that state or in a state in which the semiconductor chip is mounted on a board. By setting the type of a semiconductor memory according to the above procedure, the process from the wafer process up to the assembling step can be made common, and hence the mass-productibity and the production control can be facilitated. Semiconductor memories having memory functions conforming to user specifications can be provided in a short time.
摘要翻译： 半导体芯片设置有用于根据存储在非易失性存储器元件中的信息来选择存储器功能的功能选择电路，该存储器功能被封装在封装中，并且最终通过将该非易失性存储元件写入该状态或以该状态 半导体芯片安装在板上。 通过根据上述步骤设置半导体存储器的类型，可以使从晶片处理到组装步骤的过程是共同的，因此可以促进大规模生产和生产控制。 可以在短时间内提供具有符合用户规格的记忆功能的半导体存储器。
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2.发明授权Semiconductor device, such as a synchronous DRAM, including a control circuit for reducing power consumption 有权诸如同步DRAM的半导体器件，包括用于降低功耗的控制电路公开(公告)号：US06680875B2
公开(公告)日：2004-01-20
申请号：US10259579
申请日：2002-09-30
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C800
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A semiconductor device comprising a plurality of memory banks and a plurality of power supply circuits corresponding to the memory banks. Each of the memory banks is independently activated by an activating command. Given an externally supplied voltage, each of the power supply circuits outputs a predetermined internal supply voltage. Each power supply circuit has its output connected to the corresponding memory bank. In response to a command for activating one of the memory banks, the corresponding power supply circuit is activated while the remaining power supply circuits is deactivated.
摘要翻译： 一种半导体器件，包括多个存储体和对应于存储体的多个电源电路。 每个存储体被激活命令独立地激活。 给定外部提供的电压，每个电源电路输出预定的内部电源电压。 每个电源电路的输出连接到相应的存储体。 响应于用于激活存储体之一的命令，相应的电源电路被激活，而剩余的电源电路被去激活。
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公开(公告)号：US6107869A
公开(公告)日：2000-08-22
申请号：US96456
申请日：1998-06-11
IPC分类号： G11C11/41 , G11C5/14 , G11C8/08 , G11C11/401 , G11C11/407 , G11C11/409 , H01L21/3205 , H01L21/822 , H01L21/8242 , H01L23/52 , H01L27/04 , H01L27/108 , G05F3/02
CPC分类号： G11C8/08 , G11C5/14 , G11C5/147 , H01L2924/0002
摘要： It is possible to reduce the voltage drop on sub-power supply lines for reducing the subthreshold current and thereby prevent the operating speed of a logic circuit from lowering. Main power supply lines are arranged along one side of a rectangular region including a MOS logic circuit whose subthreshold current must be reduced, and a plurality of sub-power supply lines are arranged on the region in the direction perpendicular to the main power supply lines. A plurality of switching MOS transistors for selectively electrically connecting the sub-power supply lines to the main power supply line are dispersedly arranged with respect to the main power supply line. By dispersedly arranging the switching MOS transistors with respect to the main power supply line, it is possible to reduce the equivalent resistance of the sub-power supply lines compared to the case where switching MOS transistors are provided at one place.
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公开(公告)号：US20070177445A1
公开(公告)日：2007-08-02
申请号：US11727429
申请日：2007-03-27
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C5/14
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
摘要翻译： 提供了一种同步DRAM，其包括基于DRAM是否处于掉电模式的电源电路的操作的布置。 在一个实施例中，提供了第一电源电路和第二电源电路，其接收外部提供的电压并输出内部电源电压。 当同步DRAM的半导体器件处于掉电模式时，第一电源电路不工作。 然而，第二电源电路在掉电模式期间连续运行。 在另一种布置中，基于DRAM是否处于断电模式来控制限压器电路的操作。
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5.发明授权Semiconductor integrated circuit including first and second switching transistors having operation states corresponding to operation states of first and second logic circuits 有权包括具有对应于第一和第二逻辑电路的操作状态的操作状态的第一和第二开关晶体管的半导体集成电路公开(公告)号：US07199648B2
公开(公告)日：2007-04-03
申请号：US10859141
申请日：2004-06-03
IPC分类号： G05F1/10
CPC分类号： G11C8/08 , G11C5/14 , G11C5/147 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit is provided having first and second logic circuits coupled to first and second sub-power supply lines, respectively. First and second switching transistors are also provided to connect the first and second sub-power supply lines to a main power supply line. The first and second switching transistors are kept off in an operation stop state of the first and second logic circuits, and are kept on in operable state of the first and second logic circuits.
摘要翻译： 提供半导体集成电路，其具有分别耦合到第一和第二子电源线的第一和第二逻辑电路。 还提供第一和第二开关晶体管以将第一和第二子电源线连接到主电源线。 第一和第二开关晶体管被保持在第一和第二逻辑电路的操作停止状态，并且保持在第一和第二逻辑电路的可操作状态。
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公开(公告)号：US20050249017A1
公开(公告)日：2005-11-10
申请号：US11183802
申请日：2005-07-19
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C11/413 , G11C5/06 , G11C5/14 , G11C7/10 , G11C8/00 , G11C8/12 , G11C11/401 , G11C11/406 , G11C11/407 , G11C11/4074 , G11C11/4076 , G11C11/409 , H01L21/8242 , H01L27/108
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
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7.发明授权Semiconductor device with improved power supply control for a plurality of memory arrays 有权具有用于多个存储器阵列的改进的电源控制的半导体器件公开(公告)号：US07688670B2
公开(公告)日：2010-03-30
申请号：US12165681
申请日：2008-07-01
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C7/00
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
摘要翻译： 提供了一种同步DRAM，其包括基于DRAM是否处于掉电模式的电源电路的操作的布置。 在一个实施例中，提供了第一电源电路和第二电源电路，其接收外部提供的电压并输出内部电源电压。 当同步DRAM的半导体器件处于掉电模式时，第一电源电路不工作。 然而，第二电源电路在掉电模式期间连续运行。 在另一种布置中，基于DRAM是否处于断电模式来控制限压器电路的操作。
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公开(公告)号：US07411856B2
公开(公告)日：2008-08-12
申请号：US11727430
申请日：2007-03-27
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C7/00
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
摘要翻译： 提供了一种同步DRAM，其包括基于DRAM是否处于掉电模式的电源电路的操作的布置。 在一个实施例中，提供了第一电源电路和第二电源电路，其接收外部提供的电压并输出内部电源电压。 当同步DRAM的半导体器件处于掉电模式时，第一电源电路不工作。 然而，第二电源电路在掉电模式期间连续运行。 在另一种布置中，基于DRAM是否处于断电模式来控制限压器电路的操作。
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公开(公告)号：US07411855B2
公开(公告)日：2008-08-12
申请号：US11727429
申请日：2007-03-27
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C7/00
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
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10.发明授权公开(公告)号：US07298662B2
公开(公告)日：2007-11-20
申请号：US11483649
申请日：2006-07-11
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C7/00
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A synchronous DRAM is provided which includes arrangements for operations of power supply circuitry based upon whether the DRAM is in a power down mode or not. In one embodiment, a first power supply circuit and a second power supply circuit are provided which both receive externally supplied voltages and output internal supply voltages. The first power supply circuit is not in operation when a semiconductor device of the synchronous DRAM is in a power down mode. However, the second power supply circuit is continuously in operation during the power down mode. In another arrangement, the operation of a voltage limiter circuit is controlled based on whether or not the DRAM is in a power down mode.
摘要翻译： 提供了一种同步DRAM，其包括基于DRAM是否处于掉电模式的电源电路的操作的布置。 在一个实施例中，提供了第一电源电路和第二电源电路，其接收外部提供的电压并输出内部电源电压。 当同步DRAM的半导体器件处于掉电模式时，第一电源电路不工作。 然而，第二电源电路在掉电模式期间连续运行。 在另一种布置中，基于DRAM是否处于断电模式来控制限压器电路的操作。
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