公开(公告)号：US06248168B1

公开(公告)日：2001-06-19

申请号：US09210759

申请日：1998-12-14

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05C502

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。

公开(公告)号：US07205024B2

公开(公告)日：2007-04-17

申请号：US10771637

申请日：2004-02-05

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05D3/04

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。

公开(公告)号：US20060292298A1

公开(公告)日：2006-12-28

申请号：US11512127

申请日：2006-08-30

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05D1/12 ,  B05D3/00 ,  B05C11/02

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

公开(公告)号：US06589339B2

公开(公告)日：2003-07-08

申请号：US09842395

申请日：2001-04-26

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： B05C2100

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

公开(公告)号：US06726775B2

公开(公告)日：2004-04-27

申请号：US10421839

申请日：2003-04-24

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Makoto Muramatsu ,  Yoji Mizutani ,  Kazutoshi Yano ,  Kyoshige Katayama

IPC分类号： C23C806

CPC分类号： H01L21/6708 ,  B05D1/005 ,  B05D3/0486 ,  B05D3/107 ,  H01L21/6715 ,  Y10S134/902

摘要： Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

摘要翻译： 在转移晶片W之前，产生并排出混合气体，从而抑制了在气体引入室3开始时的溶剂成分的浓度和温度的波动。 将晶片W携带到老化单元中之后的胶凝步骤分为几个步骤。 直到晶片W的温度达到预定的处理温度，混合气体中的溶剂组分的平均浓度相对于晶片W的温度逐渐升高。由此，在将晶片W转移到密封室之后， 可以防止溶剂成分的气体冷凝。

公开(公告)号：US06808567B2

公开(公告)日：2004-10-26

申请号：US10637699

申请日：2003-08-11

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  B05D1/005 ,  B05D3/0453

摘要： A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

摘要翻译： 气体流量调节表面部分37a在晶片W的周边部分和密封容器的中心部分之间的中间距离晶片W的前表面最远。 气体流量调节部分37a在围绕排气口35a的中心部分附近向晶片W的前表面突出。 换句话说，在围绕排气口35a的气体流量调节表面部分37a的周边区域中形成有凸部37c。 由于处理气体沿着气体流量调节部分37a的前表面流动，所以处理气体在晶片W的半径方向上均匀地接触晶片W.因此，形成了具有相同厚度的膜。

公开(公告)号：US06190459B1

公开(公告)日：2001-02-20

申请号：US09210854

申请日：1998-12-15

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

IPC分类号： C23K1600

CPC分类号： H01L21/67017 ,  B05D1/005 ,  B05D3/0453

摘要： A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

公开(公告)号：US06660096B2

公开(公告)日：2003-12-09

申请号：US09735627

申请日：2000-12-14

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani ,  Kyoshige Katayama

IPC分类号： C23C1600

CPC分类号： H01L21/67017 ,  B05D1/005 ,  B05D3/0453

摘要： A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

摘要翻译： 气体流量调节表面部分37a在晶片W的周边部分和密封容器的中心部分之间的中间距离晶片W的前表面最远。 气体流量调节部分37a在围绕排气口35a的中心部分附近向晶片W的前表面突出。 换句话说，在围绕排气口35a的气体流量调节表面部分37a的周边区域中形成有凸部37c。 由于处理气体沿着气体流量调节部分37a的前表面流动，所以处理气体在晶片W的半径方向上均匀地接触晶片W.因此，形成了具有相同厚度的膜。

公开(公告)号：US06197385B1

公开(公告)日：2001-03-06

申请号：US09243120

申请日：1999-02-03

申请人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani

发明人： Kazuhiro Takeshita ,  Shinji Nagashima ,  Yoji Mizutani

IPC分类号： B05D312

CPC分类号： B05C11/08

摘要： A coating unit, an aging unit, and a solvent substituting unit are adjacently disposed. The waiting time period after a wafer is loaded to the coating unit until the coating process of the coating process is started, is adjusted so that the staying time period of the wafer in the coating unit becomes longer than the staying time period of the wafer in the aging unit and the staying time period of the wafer in the solvent substituting unit (whichever longer). The staying time period of the wafer in the coating unit is designated as a rate determiner. Thus, after the coating solution is coated to the wafer, the wafer is quickly conveyed to the next process. Consequently, since the solvent can be suppressed from evaporating, an excellent thin film can be obtained.

摘要翻译： 涂布单元，老化单元和溶剂置换单元相邻布置。 将晶片装载到涂布单元直到涂布处理的涂布处理开始之后的等待时间被调节，使得涂布单元中的晶片的停留时间长于晶片的停留时间 晶片在溶剂置换单元中的老化单元和停留时间（以较长者为准）。 将涂布单元中的晶片的停留时间段指定为速率确定器。 因此，在将涂布溶液涂布到晶片之后，晶片被快速地传送到下一个工艺。 因此，由于可以抑制溶剂蒸发，所以可以获得优异的薄膜。

公开(公告)号：US06979474B2

公开(公告)日：2005-12-27

申请号：US09886213

申请日：2001-06-22

申请人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

发明人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

IPC分类号： H01L21/00 ,  H01L21/677 ,  B05D3/00

CPC分类号： H01L21/67748 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67178

摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

摘要翻译： 当涂覆有在高温下氧化的涂布溶液的基材被热处理时，当温度低时，处理气氛的氧浓度降低。 接着，在氧浓度降低的处理气氛中进行基板的热处理。 接着，在完成热处理后经过预定时间后，处理气氛恢复到原来的氧浓度。 由此，能够对涂布液的氧化进行控制，对基板进行热处理。