公开(公告)号：US20090263911A1

公开(公告)日：2009-10-22

申请号：US11991278

申请日：2006-08-22

申请人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

发明人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

IPC分类号： G01N27/00 ,  G01N33/00

CPC分类号： H01J37/32963 ,  H01J37/3244 ,  H01J37/32935 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The object of the present invention is to provide an end point detection method in a gas phase reaction processing apparatus.An end point detection method in the case where a catalyst 9 arranged in a treatment chamber is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst 9 heated at high temperature, comprises the steps of supplying the electric power to the catalyst 9 from a constant current source 10, detecting electric potential difference between both ends of the catalyst 9, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

摘要翻译： 本发明的目的是提供一种气相反应处理装置中的终点检测方法。 在布置在处理室中的催化剂9通过向其供给电力而在高温下加热并且通过在高温下加热的催化剂9裂解反应气体来进行处理的情况下的终点检测方法包括以下步骤 从恒定电流源10向催化剂9供给电力，检测催化剂9的两端之间的电位差，进行检测出的电位差的一次微分，并根据获得的主电极确定治疗的终点 差分值。

公开(公告)号：US07815813B2

公开(公告)日：2010-10-19

申请号：US11991278

申请日：2006-08-22

申请人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

发明人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

IPC分类号： C23F1/00

CPC分类号： H01J37/32963 ,  H01J37/3244 ,  H01J37/32935 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： An end point detection method in the case where a catalyst arranged in a treatment chamber of a gas phase reaction processing apparatus is heated at high temperature by supplying electric power thereto and the treatment is carried out by cracking a reaction gas by the catalyst heated at high temperature, comprises the steps of supplying the electric power to the catalyst from a constant current source, detecting electric potential difference between both ends of the catalyst, performing primary differentiation of the detected electric potential difference, and determining an end point of the treatment based on obtained primary differential value.

摘要翻译： 在气相反应处理装置的处理室中配置的催化剂通过向其供给电力而在高温下被加热的情况下的终点检测方法，并且通过在高温下加热的催化剂裂化反应气体进行处理 温度，包括从恒定电流源向催化剂供电的步骤，检测催化剂两端之间的电位差，进行检测电位差的初步分化，并根据 获得初级差分值。

公开(公告)号：US20070048200A1

公开(公告)日：2007-03-01

申请号：US11511862

申请日：2006-08-29

申请人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

发明人： Kazuhisa Takao ,  Hiroshi Ikeda ,  Hideki Matsumura ,  Atsushi Masuda ,  Hironobu Umemoto

IPC分类号： B01J19/08

CPC分类号： C30B35/00 ,  C30B25/10

摘要： A gas phase reaction processing device 25 comprising a processing chamber 14 into which reactive gas is introduced, substrate material 3 to be processed which is disposed within the processing chamber 14, a catalytic body 9 for decomposing the reactive gas introduced into the processing chamber 14, an electric power unit 10 for supplying power to the catalytic body 9, and an electrode structure 15 containing the catalytic body 9, the gas phase reaction processing device being characterized in that the electrode structure 15 is provided with a plurality of catalytic bodies 9 which are arranged substantially parallel with one another, a first group of terminals 7 and a second group of terminals 8 which are disposed opposite to sandwich this catalytic body 9 therebetween, wherein the first group of terminals 7 supports one end of the catalytic body 9 and the second group of terminals 8 supports the other end of the catalytic body 9 respectively, and a terminal block 6 adapted to support and electrically insulate the first and second groups of terminals 7 and 8.

摘要翻译： 一种气相反应处理装置25，包括被加入反应气体的处理室14，设置在处理室14内的待处理基板3，用于分解引入到处理室14中的反应气体的催化体9， 用于向催化剂体9供电的电力单元10和包含催化剂体9的电极结构15，气相反应处理装置的特征在于，电极结构15设置有多个催化体9， 彼此基本平行地布置，第一组端子7和第二组端子8，其相对地设置在其间夹着该催化剂体9，其中第一组端子7支撑催化体9的一端，第二组端子 端子组8分别支撑催化剂体9的另一端，以及适于支撑催化体9的端子块6 并且使第一和第二组端子7和8电绝缘。

公开(公告)号：US20090004100A1

公开(公告)日：2009-01-01

申请号：US11816726

申请日：2005-07-15

申请人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

发明人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

IPC分类号： C01B3/02 ,  C23C16/00

CPC分类号： C23C16/4404 ,  H01J37/32477 ,  H01J37/32871

摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation means formed therein of a member surrounding the hydrogen atom generation means is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation means in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.

摘要翻译： 在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回 形成氢分子，其中形成有围绕氢原子产生装置的构件的氢原子产生装置的面向空间的表面的至少一部分被涂覆有SiO 2。 在将真空处理装置中由氢原子产生装置产生的氢原子转移到所需位置的氢原子传输方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。

公开(公告)号：US07771701B2

公开(公告)日：2010-08-10

申请号：US11816726

申请日：2005-07-15

申请人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

发明人： Hironobu Umemoto ,  Atsushi Masuda ,  Koji Yoneyama ,  Keiji Ishibashi ,  Manabu Ikemoto

IPC分类号： C01B3/02 ,  B01J19/02 ,  B05D7/22 ,  C23C16/22

CPC分类号： C23C16/4404 ,  H01J37/32477 ,  H01J37/32871

摘要： In a hydrogen atom generation source in a vacuum treatment apparatus which can effectively inhibit hydrogen atoms from being recombined due to contact with an internal wall surface of a treatment chamber of the vacuum treatment apparatus and an internal wall surface of a transport passage, and being returned into hydrogen molecules, at least a part of a surface facing a space with the hydrogen atom generation source formed therein of a member surrounding the hydrogen atom generation source is coated with SiO2. In a hydrogen atom transportation method for transporting hydrogen atoms generated by the hydrogen atom generation source in the vacuum treatment apparatus to a desired place, the hydrogen atoms are transported via a transport passage whose internal wall surface is coated with SiO2.

摘要翻译： 在真空处理装置中的氢原子产生源中，能够有效地抑制氢原子与真空处理装置的处理室的内壁面的接触和输送通路的内壁面的复合，并被返回 形成氢分子，其中形成有围绕氢原子产生源的构件的氢原子产生源的面向空间的表面的至少一部分被涂覆有SiO 2。 在将真空处理装置中由氢原子产生源产生的氢原子转移到所需位置的氢原子输送方法中，氢原子通过内壁表面被SiO 2涂覆的输送通道输送。

公开(公告)号：US08030223B2

公开(公告)日：2011-10-04

申请号：US12656360

申请日：2010-01-27

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L21/318 ,  H01L21/471

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20100173447A1

公开(公告)日：2010-07-08

申请号：US12656360

申请日：2010-01-27

申请人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

发明人： Masatoshi Takahashi ,  Hiroyuki Ohtsuka ,  Hideki Matsumura ,  Atsushi Masuda ,  Akira Izumi

IPC分类号： H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/02167 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

摘要翻译： 一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能 电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体 含有小于10atm％的氢的膜。 因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

公开(公告)号：US20070062648A1

公开(公告)日：2007-03-22

申请号：US11515650

申请日：2006-09-05

申请人： Shigeru Senbonmatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Shigeru Senbonmatsu ,  Shuhei Yamamoto ,  Mitsuru Suginoya ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： H01L21/306 ,  H05H1/24 ,  C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/44 ,  C23C16/4581 ,  H01L21/6833

摘要： A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.

摘要翻译： 也就是说，在催化化学气相沉积装置中设置具有氧化物层作为电介质层的静电卡盘的情况下，由于将硅薄膜重复地沉积在由静电卡盘保持的工件上， 静电卡盘的吸附力逐渐降低，最后卡盘根本不吸附基板。 因此，静电卡盘的表面上的电介质层被含有氮化硅或氧化硅的绝缘膜覆盖。 因此，由于可以防止对卡盘表面的损伤，所以即使重复沉积硅膜，由于通过催化化学气相沉积装置沉积硅膜而产生的氢自由基造成的损伤也不会降低 ，因此在沉积硅膜期间衬底温度稳定。

公开(公告)号：US6069094A

公开(公告)日：2000-05-30

申请号：US924304

申请日：1997-09-05

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/44 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV -1cm-2或更小，这是通过上述绝缘膜沉积工艺中的预处理所带来的。

公开(公告)号：US06723664B2

公开(公告)日：2004-04-20

申请号：US10041609

申请日：2002-01-10

申请人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

发明人： Hideki Matsumura ,  Akira Izumi ,  Atsushi Masuda ,  Yasunobu Nashimoto ,  Yosuke Miyoshi ,  Shuji Nomura ,  Kazuo Sakurai ,  Shouichi Aoshima

IPC分类号： H01L2131

CPC分类号： C23C16/44 ,  C23C16/0236 ,  H01L21/28264 ,  H01L21/3185

摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

摘要翻译： 本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。 催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。 在该预处理之后进行在基板表面上的薄膜沉积。 热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。 并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面密度为10 12 eV -1 cm -2以下，这是通过上述预处理在绝缘体中产生的 薄膜沉积工艺。